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  • 1
    Digitale Medien
    Digitale Medien
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 663 (1981), S. 613-620 
    ISSN: 0005-2760
    Schlagwort(e): (Rabbit intestine) ; Cholesterol ; Compactin ; Hydroxymethylglutaryl-CoA reductase regulation ; Mevalonate ; Sterol synthesis
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Biologie , Chemie und Pharmazie , Medizin , Physik
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 796 (1984), S. 27-33 
    ISSN: 0005-2760
    Schlagwort(e): (Rabbit intestinal mucosa) ; Cholesterol ; Cholesterol esterification ; Compartmentation ; Mevalonate ; Sterol synthesis
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Biologie , Chemie und Pharmazie , Medizin , Physik
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 203-208 
    ISSN: 1057-9257
    Schlagwort(e): ZnSe ; Diallylselende ; Plasma ; MOVPE ; Nitrogen doping ; Raman spectroscopy ; Photoluminescence ; Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: In order to obtain high quality Znse epilayers on GaAs which can be intentionally P- and n-type doped growth at a reduced temperature is highly desirable. Therefore in this work the suitability of diallylselenide and the influrnce of plasma precracking have ben investigated. Photoluminesscence, Raman spectroscopy, scanning electron microscopy, X-ray, SIMS and Hall measurements were used to anaylse the samples. The selenium precursor was fully decomposed at temperatures above 360°C if it was precracked by a plasma. Bound excitions could be resolved with negligible donor-acceptor pair (DAP) and copper green emission in the PL spectra form films which were grown with a plasma at temperatures beyond 530°C. Clearly the hpe for reduction in the deposition temperature was not achieved. Raman spectra also revealed strong crystalline quality variations. For the doping experiments nitrogen was used as the carrier gasa instead of hydrogen. Plasma cracking of the selenium precursor was still necessary. Thye substitution of the H2 carrier gas by nitrogen reduced the growth rate by a factor of 2.6 but enhanced the crystalline properties of the samples as shown by the Raman measurements. Strong DAP emission at 2.7eV in the (PL) spectra was observed. SIMS measurements showed a nitrogend concertration of about 3 × 1017 cm-3. An additional nirtogen plasama (0-7W) had a begligible effect on the nitrogen concentration in the sample. The samples were semi-insulating, whichmight be a conswquence of the crystalline quality of ZnSe grown with DASe as selenium precursor.
    Zusätzliches Material: 5 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 261-267 
    ISSN: 1057-9257
    Schlagwort(e): ZnSe ; ZnSxSe1 - x ; MOVPE ; Photoluminescence ; Mapping ; Purified ; DESe source ; Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: In this paper we report new results concerning the cause of impurities responsible for the Ix, and I2-peaks in photoluminescence (PL) spectra of ZnSe grown by MOVPE. An improvement in ZnSe epilayer quality is obtained by using a metal organic selenium precursor with reduced chlorine concentration. The PL spectrum of such a layer shows typical excitonic transitions, but compared with samples grown with a more contaminated source, the intensity of the Ix, and the I2 peaks decreases relative to the free exciton transition. A Gaussian fitting of the donor-bound exciton peaks taking the background of other structures into account shows that the ratio between the Ix and I2 peaks does not differ significantly between two samples. Both the decrease in donor-bound exciton transitions and the unchangeability of the ratio Ix/I2lead to the conclusion that only chlorine impurities are responsible for Ixand Ix. In order to verify the homogeneity of impurity uptake across a 2 inch wafer, we performed PL mapping of ZnSxSe1 - x layers. Mapping of a 2 inch ZnSe wafer shows that the FWHM of Ix across a wafer does not vary significantly (1.55 ± 0.21 meV). On mapping a 2 inch ZnS0.3Se0.7 wafer fabricated with H2S as the sulphur source at TD = 480°C, we found a rotational symmetric dstribution of sulphur in the layer. The sulphur content x at the centre is nearly constant. The difference in x between the centre and the boundary of a bad surface region at the edge of the wafer is less than Δx = 0.045. The FWHM of the band edge luminescence follows the same tendency across the wafer. The dependence of homogeneity on the reactor design as well as the uptake of unintentional impurities from the precursor is discussed in detail.
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 191-198 
    ISSN: 1057-9257
    Schlagwort(e): ZnSe ; ZnSSe ; GaAs substrate ; MOVPE ; Photoluminescence ; Quantum well ; Interface properties ; Growth interruption ; Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: In this work we report on ZnSxSe1 - x/ZnSe quantum wells grown by atmospheric pressure MOVPE on GaAs substrates. Diethylznc (DEZn), diethylselenium (DESe), diethylsulphur (DES) and H2S were used as source materials. Binary quantum wells with ZnSe or ZnS as barrier were usually grown in sets of 10 pairs on a 0.5 μm ZnSe or ZnS buffer, respectively. QWs with different well thicknesses (1-4 nm) show a typical shift to higher energies with decreasing well thickness and also a large decrease in PL intensity with increasing well thickness. Owing to the onset of relaxation above 5 nm well thickness, no PL emission could be observed. QWs of the same thickness but grown at different temperatures (420-520°C) show a broadened line shape with decreasing growth temperature. Growth interruption (3-50 s) also causes a broadening of the PL emission with decreasing interruption time. This is caused by interface reconstruction at higher growth temperatures and longer growth interruption. A ZnS buffer of 0.5 μm improves the PL line shape compared with a ZnSe buffer.ZnSxSe1 - x/ZnSe single and multiple QWs (Lz = 1-4 nm) were grown to reduce the strain in the structures. A typical quantum confinement energy shift of 160 meV for the 1 nm well can be observed in ZnS0.68Se0.32/ZnSe QWs. In comparison with the binary QWs, the FWHM could be reduced by about a factor of two to 34 meV. This improvement was obtained by an optimisation of the switching process to prevent the desorption of sulphur from the ZnSSe during the growth interruption.
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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