ISSN:
1572-9605
Keywords:
spin gap
;
ion size
;
magnetic doping
;
resistivity
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Y(Ba1−x Gd x )2Cu3O7−δ compounds with x = 0 ∼ 0.15 are prepared using the solid reaction technique. With structure analysis by Rietveld refinement of x-ray diffraction, we find that Gd3+ ions prefer to occupy Y sites within lighter doping x ≤ 0.08 due to ion size effects, then begin partially to occupy Ba sites with doping content increasing, which gives vital influence on superconductivity and spin-gap properties. The magnetic doping effects of Gd3+ ions on spin-gap properties are investigated in detail by contrast of the distinguished behaviors between T* and T c, indicating that spin-gap temperature is not completely determined by the carrier density, but strongly dependent on the strength of interplane antiferromagnetic coupling. Finally, we propose an expression of in-plane resistivity dependent on the maximal width of spin-gap Δ0 to derive their values for different samples, which almost keep constant with the increase of Gd doping contents.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1007746824022
Permalink
