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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    International journal of thermophysics 17 (1996), S. 695-703 
    ISSN: 1572-9567
    Keywords: AC calorimetry ; CVD diamond film ; Debye phonon model ; grain boundary ; thermal conductivity ; thermal diffusivity ; U-process
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Diamond films 60 and 170 µm in thickness were grown by PACVD (plasma-assisted chemical vapor deposition) under similar conditions. The thermal diffusivity of these freestanding films was measured between 100 and 300 K using AC calorimetry. Radiation heat loss from the surface was estimated by analyzing both the amplitude and the phase shift of a lock-in amplifier signal. Thermal conductivity was calculated using the specific heat data of natural diamond. At room temperature, the thermal conductivity of the 60 and 170 υm films is 9 and 16 W-cm−1. K−1 respectively, which is 40–70% that of natural diamond, The temperature dependence of thermal conductivity of the CVD diamond films is similar to that of natural diamond, Phonon scattering processes are considered using the Debye model, The microsize of the grain boundary has a significant effect on the mean free path of phonons at low temperatures. The grain in CVD diamond film is grown as a columnar structure, Thus, the thicker film has the larger mean grain size and the higher thermal conductivity. Scanning electron microscopy (SEM) and Raman spectroscopy were used to study the microstructure of the CVD diamond films. In this experiment, we evaluated the quality of CVD diamond film of the whole sample by measuring the thermal conductivity.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    International journal of thermophysics 19 (1998), S. 281-290 
    ISSN: 1572-9567
    Keywords: GaAs ; impurities ; phonons ; photothermal displacement technique ; semiconductors ; Si ; thermal conductivity ; thermal diffusivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Thermal conductivity and thermal diffusivity of Si and GaAs wafers were measured using the photothermal displacement technique, and the temperature dependence of these two quantities was investigated. Thermal diffusivity was obtained from the phase difference between the heating source and the signal, and thermal conductivity was determined from the maximum value of the signal amplitude in the temperature range 80 to 300 K. It was verified that an increase in doping concentration gives rise to a decrease in thermal conductivity at low temperatures. The experimental results obtained on samples with different types and doping concentrations are consistent with those expected from theoretical considerations.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1572-9567
    Keywords: antireflection coating ; parameter estimation ; photoacoustic effect ; thermal diffusivity ; through-plane
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In this study, we designed and developed two-layer antireflection (AR) optical coating samples on glass substrates, using different evaporation conditions of coating rates and substrate temperatures for two dielectric materials, MgF2 and ZnS, with different refractive indices. The through-plane thermal diffusivity of these systems was measured using the photoacoustic effect. The optical thicknesses of MgF2 and ZnS layers were fixed at 5λ/4 (λ=514.5 nm) and λ, respectively, and the thermal diffusivities of the samples were obtained from the measured amplitude of the photoacoustic signals by changing the chopping frequency of the Ar+ laser beam. The results demonstrated that the thermal diffusivity of the sample fabricated under the conditions of 10μÅ·s−1 and 150°C had the maximum value and that the results were directly related to the microstructure of the film system.
    Type of Medium: Electronic Resource
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