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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2972-2976 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5606-5609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 530-532 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (Sint) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that Sint depends directly on holes at interface states or traps at the Si/SiO2 interface.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 168-184 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of SiO2-Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO2-Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2783-2788 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray and ultraviolet photoelectron spectroscopies were used to investigate the microscopic changes at the Ti/Bi2Sr2CaCu2O8 interface. Ti extracts oxygen out of the superconductor by disrupting vital bonds such as Cu—O and Bi—O. The adatom-induced oxygen withdrawal is explained on the basis of cationic bond lengths in the superconductor and standard bond strengths. The changes associated with Cu 2p spectra are attributed to an increase in covalency of Cu—O bonds, which is the consequence of a rearrangement of oxygen anions around Cu+2 ions. In the early stages of the interface formation, bismuth and titanium are in a complex bonding configuration, which is evident from their binding energies. The line shape analysis of Ti 2p spectra reveals that Ti is in multiple oxidation states at different stages of the evolving interface. This shows that the mobility of oxygen is an important factor which controls the overlayer growth.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2874-2876 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The positron mobility in thermally grown SiO2 is deduced from Doppler broadening lineshape data on a metal-oxide-semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)×10−3 cm2/s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6603-6606 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe positron annihilation studies of SiO2/Si(100) structures having 100-nm-thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as (large-closed-square)=2.02±0.07 eV.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 4356-4367 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Computer simulations are performed to study the structure of the coordination shells of Fe+2 and Fe+3 ions fixed at a very close reactive separation. The simulations show that it is possible for the two octahedral aquo complexes, i.e., Fe(H2O)62+ and Fe(H2O)63+, to come as close as 5 A(ring) without disrupting their coordination shells. The reorientational dynamics within the hydration shells of these ions at this separation is examined by studying the time correlation functions (TCFs) of the unit vectors on the water molecules and along the iron–oxygen vector. The quantities related to the solvent polarization relaxation during a change in the charge, the dipole moment, and the quadrupole moment located at the solute ions are examined by studying the corresponding TCFs in the system. The TCFs exhibited a bimodal response, with a very fast initial relaxation due to inertial motions of the solvent, followed by a long tail corresponding to a diffusive component. The polarization fluctuations are also estimated via the cavity field time correlation function (CFTCF), which is useful in the theory of electron transfer processes. The memory kernel or the time dependent friction (TDF) of the solvent is also estimated from the force–force time correlation function. The cross correlations between the Coulombic and the non-Coulombic components of the forces at the ions contribute significantly to the TDF.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3403-3409 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Open-volume defects introduced in Si(100) crystals during fluorine implantation were investigated by variable-energy positron beam depth profiling. The behavior of the implantation-induced lattice defects upon high temperature annealing and their role in the surface-oriented diffusion of F impurities were examined. The defects become mobile and undergo recovery at temperatures below 550 °C, i.e., well before the onset of fluorine diffusion as seen by secondary ion mass spectroscopy (SIMS) profiling. This behavior suggests that after irradiation and annealing the fluorine occupies substitutional sites to which positrons are insensitive. The anomalous F diffusion seen in SIMS has been explained through a two-step diffusion mechanism, in which the diffusion kinetics is determined by dissociation of the substitutional F into an interstitial F and a vacancy, followed by a rapid diffusion of the interstitial F and the vacancy through the crystal to the surface.
    Type of Medium: Electronic Resource
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