Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 1742-1744
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Raman spectroscopy is used to study C and Ge diffusion in multilayers of C-induced Ge dots deposited on Si(100). The initial Ge content is fixed to 2 ML and the C precoverage varied from 0.1 to 0.3 ML. The resulting concentration of isolated substitutional C atoms depends on the C precoverage and the thermal annealing performed after growth. C atoms are mostly localized in the areas around the dots, due to the repulsive Ge–C interaction. When C is added, the interface around the burried dots becomes sharper, and less Ge alloying occurs. C mainly increases the strain contrast around the dots and induces a strain-enhanced Ge interdiffusion, even at 650 °C. At 800 °C, Ge and C interdiffuse simultaneously. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1355303
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