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  • 1
    Electronic Resource
    Electronic Resource
    A reexamination of the oxygen parameters in the CNDO/S method. Application to UV and photoelectron spectra of p-benzoquinone (1981)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 85 (1981), S. 473-479 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150605a004
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of plasmas produced by laser–gas jet interaction (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 3467-3472 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experiment has been performed with one of the six nanosecond beams of the Laboratoire pour l'Utilisation des Lasers Intenses laser facility in order to create long scale uniform plasmas over a wide range of electron density (1×1019–1.6×1020 cm−3) and electron temperature (0.5–1.3 keV). Electron density and temperature evolution have been measured using Thomson scattering. Numerical simulations obtained by using a simple model are presented. Scaling law related electron density and electron temperature have been established in agreement with experimental data. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1379587
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of electron beams produced by ultrashort (30 fs) laser pulses (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 2605-2608 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements of electron spectra and charges from the interaction of 10 Hz, 600 mJ laser pulses in the relativistic regime with a gas jet have been done over a wide range of intensities (1018–2×1019 W/cm2) and electron densities (1.5×1018–1.5×1020 cm−3), from the "classical laser wakefield regime" to the "self-modulated laser wakefield" regime. In the best case the maximum electron energy reaches 70 MeV. It increases at lower electron densities and higher laser intensities. A total charge of 8 nC was measured. The presented simulation results indicate that the electrons are accelerated mainly by relativistic plasma waves, and, to some extent, by direct laser acceleration. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374584
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  • 4
    Electronic Resource
    Electronic Resource
    DIONÉ status report : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2815-2816 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The SATURNE synchrotron facility is equipped with an EBIS source for heavy ion nuclear-physics experiments. SATURNE is accelerating either conventional heavy ions as Kr30+ or polarized 6Li3+ produced in two external ion sources, injected and stripped inside DIONÉ. In this paper, the DIONÉ last performances will be given and recent developments as well: evaporative cooling experiments and the main options for a new EBIS project: RHÉA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142814
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of pulse duration on self-focusing of ultra-short lasers in underdense plasmas (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 756-759 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experiment investigating laser self-focusing in underdense plasmas is presented. It was shown experimentally that the critical power for relativistic self-focusing Pc is not the only relevant parameter, in particular when the laser pulse duration is comparable to plasma particle motion times: ωp−1 for electrons and ωpi−1 for ions. Using time resolved shadowgraphy, it was demonstrated that: (i) a pulse does not relativistically self-focus if its duration is too short compared to ωp−1, even in the case where the power is greater than Pc. This is due to defocusing by the longitudinal wake which is generated by the laser pulse itself. (ii) For pulses longer than ωpi−1, self-focusing can occur even for powers lower than Pc. This is due to the radial expansion of ions, creating a channel whose effect combines with relativistic focusing and helps the pulse to self-focus. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447556
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  • 6
    Electronic Resource
    Electronic Resource
    Interaction of an ultra-intense laser pulse with a nonuniform preformed plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 3009-3016 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of an ultra-intense laser pulse in a preformed plasma channel was investigated experimentally. Different regimes of propagation were observed when the pulse duration was varied. For a long pulse and powers lower than the critical power for self-focusing, PL/PC〈1 (I0=2×1017 W/cm2), the laser pulse was guided by the preformed plasma channel over three Rayleigh lengths (4 mm) and a longitudinal plasma wave was generated by envelope self-modulation of the pulse. For a short pulse and PL/PC(very-much-greater-than)1, the interaction was dominated by self-focusing and Raman instabilities. Numerical simulations were run for the latter case, giving results comparable to the experiment. The simulations were also used to investigate the dynamics of the instabilities at high power. They showed that strong Raman side scattering first occurs at the beginning of the interaction and is then followed by self-focusing and envelope self-modulation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874153
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  • 7
    Electronic Resource
    Electronic Resource
    First results on the warm EBIS source at Saclay : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1168-1170 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A large high current EBIS source, working at room temperature, and using a noncryogenic solenoid, has been completed in Saclay. This source, whose current density is lower (≈100 A cm−2) than the cryogenic EBIS, has been designed to be used at very low pressures with turbo and Ti sublimator pumping. An ultimate vacuum of 8×10−12 mbar has been reached and may be obtained in a few days after opening. This ultrahigh vacuum allows very long confinement times. The electron beam has been injected and large amounts of Ar16+ and Ar17+ ions have been obtained in July. These preliminary results are in good agreement with theoretical simulations. More details about the special dynamics of the warm EBIS are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146721
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  • 8
    Electronic Resource
    Electronic Resource
    First results of a high-current electron cyclotron resonance proton source : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1240-1242 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A 2.45 GHz electron cyclotron resonance (ECR) ion source for producing a 100 mA H+ beam is under study. The microwave power is coupled through a quartz window and a water-cooled 90° waveguide bend in order to avoid the heating of the electrons backstreaming from the source. The ECR condition is obtained with dc magnetic coils. Preliminary results reported here show that a beam current density of 75 mA/cm2 can be extracted at 10 kV from a 3-mm-diam aperture, with 1.2 kW of microwave power at 1×10−3 mbar of hydrogen pressure. The proton fraction is 75% with an alumina-coated plasma electrode and 85% with a nitride coating. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146643
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  • 9
    Electronic Resource
    Electronic Resource
    High-dose phenomena in zinc-implanted silicon crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3470-3476 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of (100) silicon implanted with Zn+ ions at an energy of 50 keV was studied. The ion doses were varied from 1×1015 to 1×1017 cm−2 and the beam current density was 10 μA cm−2. The analytical techniques employed for sample characterization included cross-sectional transmission electron microscopy and x-ray energy dispersion analysis. The energy deposition of the ion beam was calculated by using computer simulation codes. For the two lower doses of 1×1015 and 1×1016 a crystalline-to-amorphous transformation was observed in the implanted layer and this was correlated with the thermal history of the implants and the attendant changes in morphology. In contrast, an amorphous-to-crystalline transition was found to occur at higher doses, namely 5×1016 and 1×1017, where the formation of a complex, structured layer consisting of an amorphous phase mixed with crystalline grains of Zn and partly recrystallized Si was identified together with other specific structural features. Detailed characterization of the resulting microstructures was carried out taking into account the effects of sample heating, ion-beam-induced amorphization, crystallization, and sputtering. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361395
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  • 10
    Electronic Resource
    Electronic Resource
    Cross-sectional high-resolution electron microscopy investigation of argon-ion implantation-induced amorphization of silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4415-4423 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional high-resolution transmission electron microscopy and related diffraction techniques are applied to the characterization of argon implantation-induced amorphization of silicon at room temperature. Damage calculations have been performed to provide a theoretical support for the cross-sectional transmission electron microscopy observations. It is shown that the amorphous-crystalline interfacial roughness is strongly dependent on ion dose and hence on its depth location. The a-c transition region was found to have sharply defined boundaries and sometimes exhibits defects such as dislocations and stacking-fault nuclei. Combining the experimental measurement of the extension of the a layer for increasing dose, with concepts arising from the "critical damage energy density'' model leads to a value of about 10 eV/atom for the c→a transformation. It is suggested that temperature effects are responsible for the observation that higher damage energy densities are apparently needed to produce a first continuous a layer than to extend this layer to greater depth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341264
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