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  • 1
    Electronic Resource
    Electronic Resource
    Dislocation behavior in InGaAs step- and alternating step-graded structures: Design rules for buffer fabrication (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3632-3634 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparison between compositionally stepped and alternating step-graded structures used in the production of a relaxation buffer layer is carried out by means of transmission electron microscopy. The latter shows higher efficiency in relieving the strain. A simple balance force model permits us to understand the reason for a higher generation of threading dislocations observed in the alternating step-graded structures. The presented results can be applied as new design rules for buffer fabrication that contrast in some key points with previous published rules as, for example, the "zero-net-strain'' precept [D. Dunstan, P. Kidd, P. F. Fewster, N. L. Andrew, L. González, Y. González, A. Sacedón, and F. González-Sanz, Appl. Phys. Lett. 65, 845 (1994)]. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115341
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  • 2
    Electronic Resource
    Electronic Resource
    Orbital free ab initio molecular dynamics study of liquid Al near melting (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 2373-2376 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The orbital free ab initio molecular dynamics method is applied to study the static and dynamic structure of liquid Al near the triple point. The method uses a new kinetic energy functional, along with a local pseudopotential constructed within the same kinetic energy functional. The results obtained for the dynamic structure factor are compared with recent experimental data. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389473
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  • 3
    Electronic Resource
    Electronic Resource
    Periodically kicked hard oscillators (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 51-62 
    Details
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model of a hard oscillator with analytic solution is presented. Its behavior under periodic kicking, for which a closed form stroboscopic map can be obtained, is studied. It is shown that the general structure of such an oscillator includes four distinct regions; the outer two regions correspond to very small or very large amplitude of the external force and match the corresponding regions in soft oscillators (invertible degree one and degree zero circle maps, respectively). There are two new regions for intermediate amplitude of the forcing. Region 3 corresponds to moderate high forcing, and is intrinsic to hard oscillators; it is characterized by discontinuous circle maps with a flat segment. Region 2 (low moderate forcing) has a certain resemblance to a similar region in soft oscillators (noninvertible degree one circle maps); however, the limit set of the dynamics in this region is not a circle, but a branched manifold, obtained as the tangent union of a circle and an interval; the topological structure of this object is generated by the finite size of the repelling set, and is therefore also intrinsic to hard oscillators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.165978
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetochemistry of the tetrahaloferrate(III) ions. 3. Specific heat of bis[4-bromopyridinium tetrachloroferrate(III)]-4-bromopyridinium chloride (1992)
    s.l. : American Chemical Society
    Inorganic chemistry 31 (1992), S. 1724-1726 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00035a040
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  • 5
    Electronic Resource
    Electronic Resource
    Strain relaxation behavior of InxGa1−xAs quantum wells on vicinal GaAs (111)B substrates (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1541-1543 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A number of reports have suggested that InGaAs/GaAs (111)B strained layer epitaxy has the prospect of reaching a higher critical layer thickness than that which can be achieved for (001) substrates. This has motivated a study of the relaxation mechanism of InGaAs/GaAs (111)B quantum wells with high In content (0.12〈x〈0.35). Transmission electron microscopy has revealed the existence of a different misfit dislocation (MD) configuration for high In contents (x〉0.25), which, we believe, has not been reported until now. For such compositions, plastic relaxation takes place through a polygonal network of MDs, which have Burgers vectors in the interface plane. The origin of this network is an unusual dislocation source that occurs through the formation of a three-pointed star-shaped configuration. The characteristics of this misfit dislocation network, which has a higher misfit relieving component and a glide plane coincident with the interface plane, imply a reduction of the previous critical layer thickness estimates for high In content InGaAs/GaAs (111)B heterostructures. However, we observe that none of the (111)B samples shows evidence of a transition to a three-dimensional growth mode, which represents a significant advantage compared to the behavior of high In content quantum wells on (001) substrates. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455691
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  • 6
    Electronic Resource
    Electronic Resource
    Control of phase modulation in InGaAs epilayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3236-3238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical description of the phase modulation state of epitaxial InGaAs layers has been recently published [D. González et al. Appl. Phys. Lett. 74, 2649 (1999)]. To verify experimentally the deduced phase diagram, InGaAs structures with In compositional steps were grown using different growth conditions. Transmission electron microscopy studies have revealed the modulation state in each layer and have allowed us to define the experimental In composition and temperature dependence of the phase transition. The results show that InGaAs layers with and without composition modulation can be obtained by changing the growth temperature. An excellent agreement with the model predictions is observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126592
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  • 7
    Electronic Resource
    Electronic Resource
    Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2649-2651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ternary and quaternary semiconductor alloys are usually limited in their band gap engineering by problems related to modulation of composition. In this contribution, we point out the importance of the growth rate in the evolution of a modulation profile in epitaxial films. As a consequence, a diagram of phases for the epitaxial growth is proposed where a window of homogeneous composition is evidenced at low temperatures of growth. The model provides a framework for the epitaxial growth where temperature and growth rate regulation permits the control of the composition modulation in heteroepitaxies. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123926
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  • 8
    Electronic Resource
    Electronic Resource
    Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1875-1877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using previously published relaxation models [D. J. Dunstan, P. Kidd, L. K. Howard and R. H. Dixon, Appl. Phys. Lett. 59, 3390 (1991) and D. González, D. Araújo, G. Aragón, and R. García, Appl. Phys. Lett. 71, 2475 (1997)] that predict the strain relaxation in the InGaAs/GaAs system, before and during the stage of relaxation saturation, the critical thickness where dislocation interactions begin to limit the plastic relaxation is estimated. The approximations used to deduce an analytical expression are shown to be appropriate for describing the regime of relaxation considered. A good agreement with experimental data previously published by other authors permits a physical explanation for the different observed regimes of relaxation to be given. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121212
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  • 9
    Electronic Resource
    Electronic Resource
    A work-hardening based model of the strain relief in multilayer graded-buffer structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3099-3101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes the modeling of the dislocation distribution and of the strain relief in linearly and step-graded structures, based on work-hardening considerations. The model considers the energy variation in an InGaAs/GaAs system upon introducing a new dislocation into the interfacial fixed array of misfit dislocations. An analytical expression for the strain relaxation in graded-buffer structures is proposed. Transmission electron microscopy observation confirms the model predictions and reveals that the saturation state of relaxation is reached in the buried layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120258
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  • 10
    Electronic Resource
    Electronic Resource
    Work-hardening effects in the lattice relaxation of single layer heterostructures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2475-2477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modelization of the strain relaxation in single heteroepitaxial layers is presented in this letter. The calculations consider the energetic variations of the heteroepitaxial structure when introducing one new dislocation into the existing interfacial array of fixed misfit dislocations without continuous readjustment of the spacing array. The interaction energy of the new dislocation with both lattice mismatch and dislocation array is shown to be the limiting factor that controls the mechanism of strain relaxation at the saturation stage of relaxation. The model is shown to be in good agreement with the lattice relaxation behavior of previously published strain/thickness data. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120092
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