Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 253-258
ISSN:
1662-9779
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Physik
Notizen:
The properties of point defects introduced by low temperature electron irradiationof germanium are investigated by first-principles modeling. Close Frenkel pairs, including themetastable fourfold coordinated defect, are modelled and their stability is discussed. It is foundthat damage evolution upon annealing below room temperature can be consistently explainedwith the formation of correlated interstitial-vacancy pairs if the charge-dependent properties ofthe vacancy and self-interstitial are taken into account. We propose that Frenkel pairs can trapup to two electrons and are responsible for conductivity loss in n-type Ge at low temperatures
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.253.pdf
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