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  • 1
    Digitale Medien
    Digitale Medien
    Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1122-1123 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-μm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347385
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  • 2
    Digitale Medien
    Digitale Medien
    Repetition of negative differential resistance in vertically integrated double-barrier resonant tunneling structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4382-4385 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We propose and demonstrate a novel operation in the vertical integration of double-barrier resonant tunneling structures (DBRTS's) in which the negative differential resistance (NDR) region can be repeated. When two DBRTS's are combined in series, one of which has a higher peak current, a lower valley current, and a larger operation range of voltage in the NDR region than those of the other, the current-voltage (I-V) characteristic shows three current peaks instead of the conventional two. This phenomenon is based on the fundamental requirement of current continuity in serially combined devices. This operation provides a method to obtain a large number of current peaks by using less DBRTS's.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.344910
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  • 3
    Digitale Medien
    Digitale Medien
    A novel technique for low-threshold and high-power InGaAs/GaAs strained-layer 0.98-μm buried heterostructure laser fabrication (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1525-1527 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A novel fabrication technique has been developed for InGaAs/GaAs strained-layer buried heterostructure lasers. Dielectric masks and Zn diffusion are not required in this technique. This novel fabrication process is much easier than the conventional approach and yields excellent laser results. A low threshold of 3 mA and high-power operation for lasing wavelength of 9800±20 A(ring) have been achieved with graded index separate confinement heterostructure devices using this novel technique.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351398
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  • 4
    Digitale Medien
    Digitale Medien
    Precise determination of aluminum content in AlGaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4877-4882 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The Al composition of AlGaAs has been determined by four methods: high-resolution transmission electron microscopy (HRTEM), reflection high-energy electron diffraction (RHEED), photoluminescence (PL), and double-crystal x-ray diffraction (DCXRD). HRTEM is direct and the most accurate method because it does not involve any formula or extrapolation. Using the result obtained from HRTEM as a standard, we have calibrated the results from other methods. RHEED intensity oscillation is found to be accurate and reliable, if the growth conditions are correctly chosen. Comparing the PL results with those determined from HRTEM and RHEED, we suggest three formulas to determine the Al contents at different temperatures. We also proposed a polynomial to determine the Al concentration using the DCXRD measurement.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349030
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  • 5
    Digitale Medien
    Digitale Medien
    Conservative antiphase boundary in SrTiO3 films on LaAlO3 substrates with SrRuO3 buffer layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5653-5656 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied the microstructure of SrTiO3 films on LaAlO3 substrates with the SrRuO3 buffer layer using high-resolution transmission electron microscopy. While high density of defects due to lattice mismatch were found at the SrRuO3/LaAlO3 interface, no misfit dislocation was observed at the SrTiO3/SrRuO3 interface. The {111} stacking fault in the SrRuO3 buffer layer propagates into the SrTiO3 film, giving rise to a type of antiphase boundary on the {110} plane with a crystallographic shear vector of a/2〈001〉. The boundary is a conservative one which does not lead to any charge defects. A model based on dislocation interactions is proposed to explain the generation mechanism of the antiphase boundary. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1367881
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  • 6
    Digitale Medien
    Digitale Medien
    High frequency impedance spectra on the chromium dioxide thin film (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7702-7704 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the study of high frequency magnetotransport properties of the chromium dioxide (CrO2) thin films, grown on Si substrate using chemical vapor deposition. The film exhibits a ferromagnetic transition with a Curie temperature near 390 K. The temperature dependent spontaneous magnetization follows Bloch's law. The impedance spectra, being analyzed based on the fundamental electrodynamics, are demonstrated to be in a low-loss dielectric limit along with the occurrence of dielectric relaxation and magnetization response. The specific features of impedance spectra, distinct from the usual metallic ferromagnet, are attributed to the half metallic nature of CrO2. The results explore the possibility for high frequency device applications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1358352
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  • 7
    Digitale Medien
    Digitale Medien
    Delta-doped quantum well structures grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1887-1888 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Delta doping in quantum well structures has been studied. The quantum wells consist of a strained InGaAs layer sandwiched between two GaAs layers. The layers were undoped except for a sheet of Si dopants deposited in the middle of the quantum well. Structures with various doses and quantum well thicknesses were studied and compared. Capacitance voltage measurements were carried out to determine the carrier distribution. A very narrow carrier profile with a full width at half maximum of only 12 A(ring) has been achieved. This is the narrowest carrier profile ever reported for any growth technique.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104001
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  • 8
    Digitale Medien
    Digitale Medien
    Quantum effect in the accumulation layer on field-induced photoluminescence of double-barrier resonant tunneling structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 87-89 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photoluminescence (PL) of double-barrier resonant tunneling structures (DBRTSs) with undoped electrodes under bias has been studied. The strong band bending across the cathode causes the quantum size effect in the accumulation layer. The resonant tunneling of electrons from the first excited quantum level in the accumulation layer produces a kink in the current-voltage characteristic. It is found that the PL intensity from the quantum well (QW) as a function of bias sharply peaks at the voltage corresponding to the kink. This provides evidence of the interaction between the first excited quantum state in the accumulation layer and the resonant state in the QW.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105532
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  • 9
    Digitale Medien
    Digitale Medien
    Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1640-1642 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104073
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  • 10
    Digitale Medien
    Digitale Medien
    Behavior of the first layer growth in GaAs molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1392-1394 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103445
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