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  • 1
    Digitale Medien
    Digitale Medien
    White light from an electroluminescent diode made from poly[3(4-octylphenyl)-2,2'-bithiophene] and an oxadiazole derivative (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7530-7534 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on an electroluminescent diode emitting red, green, and blue light simultaneously. The device is based on a thin polymer layer, poly[3-(4-octylphenyl)-2,2'-bithiophene] and a thick molecular layer, 2-(4-biphenylyl)-5-(4-tertbutyl-phenyl)1,3,5-oxadiazole. The quantum efficiency for light conversion is 0.3% and the turn-on voltage for light emission is 7 V. In this article we present electric and spectroscopic characterizations. A mechanism for the light emission, based on electron and hole recombination between the two organic layers, is proposed. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357984
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  • 2
    Digitale Medien
    Digitale Medien
    Anisotropic dc conductivity in stretch-oriented iodine-doped poly[3-(4-octylphenyl)-2,2′-bithiophene] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7915-7919 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A square four-point probe is constructed to measure anisotropic conductivity of small samples. The method is applied to measurements of the anisotropic conductivity of a conjugated polymer. The polymer poly[3-(4-octylphenyl)-2,2'-bithiophene] is stretch oriented to various elongations and doped with I2 vapor. The conductivity anisotropy is dependent on the degree of orientation and the absolute conductivity. An anisotropy value of 2.4 is obtained for an elongation of four times. For a given elongation the conductivity anisotropy decreases during the spontaneous undoping. The experimental results are discussed in terms of varying charge hopping distances. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358427
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  • 3
    Digitale Medien
    Digitale Medien
    Thermochromism and optical absorption in Langmuir–Blodgett films of alkyl-substituted polythiophenes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 893-899 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thermochromism and optical absorption in mono- and multilayers of Langmuir–Blodgett films of poly(3-alkylthiophenes), poly(3-octyl-2,2'-bithiophene), and poly(3'-octyl-2,2';5',2‘-terthiophene) were studied. In sparsely alkylated polythiophenes the magnitude of the thermochromic shift was smaller than in poly(3-alkylthiophenes) and roughly proportional to the sidechain concentration. Results of Valence Effective Hamiltonian calculations were compared with the experimental results of thermochromism. A vibronic structure was found in the absorption spectra of Langmuir–Blodgett films at room temperature. The vibronic splitting in poly(3-hexylthiophene) was approximately 0.18 eV as previously has been observed in poly(3-alkylthiophenes) but in poly(3'-octyl-2,2';5',2‘-terthiophene) it was 0.20–0.25 eV. The vibronic peaks stay approximately at constant energies and vanish at elevated temperatures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357766
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  • 4
    Digitale Medien
    Digitale Medien
    Photoluminescence quenching in a polymer thin-film field-effect luministor (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2816-2820 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the observation of photoluminescence quenching in thin films of poly(3-hexylthiophene) and Langmuir–Blodgett films of poly(3-hexylthiophene)/arachidic acid by the injection of positive charges in the polymer. Charge injection was made in a polymer field effect transistor, used in what we name the luministor mode. The quenching is discussed in terms of polarons/bipolarons acting as recombination centra for the excitons, suppressing the photoluminescence. The inverse phenomenon, luminescence enhancement by depletion of charges, has also been achieved.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351010
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  • 5
    Digitale Medien
    Digitale Medien
    Properties of the planar poly(3-octylthiophene)/aluminum Schottky barrier diode (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2900-2906 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Formation and characterization of planar polymer Schottky barrier diodes are presented. Electrical characteristics of planar aluminium-poly(3-octylthiophene) Schottky barrier diodes are studied with emphasis on the current transport mechanisms. The device exhibits nearly ideal diode behavior in dark with an ideality factor of n=1.2. Temperature dependence of the current-voltage characteristics of the diode is studied in the range 170–370 K. Agreement with the diffusion theory of metal-semiconductor rectification is demonstrated for high temperatures T(approximately-greater-than)300 K. For temperatures less than room temperatures tunneling is proposed to be the dominant current transport mechanism.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351491
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  • 6
    Digitale Medien
    Digitale Medien
    Gas-phase x-ray photoelectron spectroscopy of model molecules relating to the thermochromism in poly(3-alkylthiophene) (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 6357-6362 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Previously, a geometrical model of the thermochromism in poly(3-alkylthiophene) was proposed, based upon an analysis of optical absorption spectra as well as ultraviolet and x-ray photoelectron spectra (UPS and XPS). In the present contribution, the shake-up features in the XPS C(1s) spectra of thiophene, hexyl-substituted thiophene, and bithiophene molecules in the gas phase, are compared with the shake-up features in previously published XPS C1s spectra of poly(3-hexylthiophene) and poly(3-butylthiophene). An analysis of these gas phase molecular data confirms the geometric model of electronic localization in the polymer materials proposed previously.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.458978
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  • 7
    Digitale Medien
    Digitale Medien
    Thermochromism in poly(3-hexylthiophene) in the solid state: A spectroscopic study of temperature-dependent conformational defects (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 4613-4619 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Reversible thermochromism in thin solid films of poly(3-hexylthiophene), or P3HT, has been studied using ultraviolet and x-ray photoelectron spectroscopies (UPS and XPS, respectively). The UPS and XPS spectra, as well as previously published optical absorption spectra, are analyzed using the results of valence effective Hamiltonian (VEH) quantum chemical calculations of the electronic structure of isolated polymer chains. The analysis of the spectra indicates that at elevated temperatures thermally induced electronic localization occurs as a consequence of thermally induced conformational disorder.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.454802
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  • 8
    Digitale Medien
    Digitale Medien
    Rectifying metal-polymer contacts formed by melt processing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 733-734 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Rectifying contacts between aluminum, indium, or titanium and a solution and melt processable conducting polymer, poly(3-octylthiophene) have been formed by melt processing. The contacts are formed by heating a metal/polymer/metal structure to the melting point of the polymer and then pressing the metals to the melted polymer until adhesion is achieved, whereupon the whole structure is cooled to room temperature. Comparison of the current-voltage and capacitance-voltage characteristics of a melt processed device and a device manufactured by metal sputtering shows that no significant differences exist between these structures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103602
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  • 9
    Digitale Medien
    Digitale Medien
    Field-effect mobility of poly(3-hexylthiophene) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 195-197 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A field-effect transistor structure is used to study the transport properties of the soluble conductive polymer, poly(3-hexylthiophene). We have measured conductance, mobility, and carrier concentration in undoped polymer thin films. The field-effect mobility was found to be 10−5–10−4 cm2/V s at room temperature. The mobility decreases with increased temperature. The change is only partly reversible. Possible transport models are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100171
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  • 10
    Digitale Medien
    Digitale Medien
    Multicolor oligothiophene-based light-emitting diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1493-1495 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We demonstrate wide tunability, from green to near infrared, of the electroluminescence emission of substituted oligothiophene compounds. The compounds are characterized by high chemical stability, electron affinities up to 3.1 eV and photoluminescence efficiencies up to 70%. These characteristics make these materials excellent candidates for application in light-emitting diodes. We obtain low turn-on voltage devices with electroluminescence efficiency up to 0.2%, more than one order of magnitude larger than the values reported for unsubstituted oligothiophene compounds. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1355991
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