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  • 1
    Digitale Medien
    Digitale Medien
    Evaluating family-centred service using a measure of parents’ perceptions (1997)
    Oxford BSL : Blackwell Science
    Child 23 (1997), S. 0 
    Details
    ISSN: 1365-2214
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin , Psychologie
    Notizen: This article describes the use of a newly-developed measure of parents’ perceptions of health care providers’ behaviours (Measure of Processes of Care — MPOC) to evaluate the family centredness of children’s rehabilitation services. The measure was developed with the participation of more than 1600 parents of children with chronic neurodevelopmental conditions throughout Ontario. It assesses five domains: enabling and partnership; providing general information; providing specific information about the child; coordinated and comprehensive care; and respectful and supportive care. By comparing the perceptions of parents receiving services from three different types of organizations or programmes, we demonstrated that the MPOC can pick up differences between parents in their experiences of caregiving. We also demonstrated that the MPOC is able to detect differences in how parents view the family-centredness of services provided by individual centres. The data indicate that the MPOC has appreciable utility in providing programmes and services with a description of their current level of family-centred service as perceived by parents. The strengths, limitations and potential uses of the measure in other contexts are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1365-2214.1997.840840.x
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  • 2
    Digitale Medien
    Digitale Medien
    The dry skin associated with atopic eczema (1978)
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 98 (1978), S. 0 
    Details
    ISSN: 1365-2133
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1365-2133.1978.tb13599.x
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  • 3
    Digitale Medien
    Digitale Medien
    Family-centred service: moving ideas into practice (2005)
    Oxford, UK : Blackwell Science Ltd
    Child 31 (2005), S. 0 
    Details
    ISSN: 1365-2214
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin , Psychologie
    Notizen: Background  With parents more involved in their child's day-to-day care, concepts of family-centred service (FCS) are increasingly adopted in children's health and rehabilitation service organizations.Methods  In this paper, we report the results of a study to develop and evaluate educational materials for parents, service providers and health sciences students about FCS. The materials focus on the nature and philosophy of FCS, and the practical skills and systemic changes required for its implementation.Results  Thirty-six participants (12 families, 12 service providers and 12 rehabilitation science students) were randomly assigned to receive one of the six FCS educational packages, each containing three FCS educational sheets. Participants’ ratings of the format and content, and the impact of the FCS Sheets were very high, with overall means above 5.0 on a 7-point scale. Using a mixed model analysis, we found significant differences in participants’ ratings of familiarity with the materials (students were less familiar than service providers). After statistical adjustment for familiarity, there were no significant differences between the groups or the packages on ratings of format and content or impact.Conclusions  There were no significant differences in the way in which the participant groups rated the impact of the FCS Sheets and the specific packages did not have an effect on the participants’ ratings. The FCS educational materials, even those less familiar to participants, were rated highly on format and content, and impact. Results indicate that the material was perceived to be important to each group, and was formatted and written in a way that was easy to understand. This finding counters current recommendations in the knowledge transfer literature that suggest different versions should be written for different target groups.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1365-2214.2005.00568.x
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  • 4
    Digitale Medien
    Digitale Medien
    Factors affecting family-centred service delivery for children with disabilities (2003)
    Oxford, UK : Blackwell Science Ltd
    Child 29 (2003), S. 0 
    Details
    ISSN: 1365-2214
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin , Psychologie
    Notizen: Background  The provision of family-centred services (FCS) emphasizes a partnership between parents and service providers so that families are involved in every aspect of services for their child. There is evidence that providing FCS is associated with improvements in parents’ satisfaction with services, decreased parental stress, and positive child outcomes.Methods  The purpose of this study was to examine factors that are most important in determining parent perceptions of the family centredness of care and parent satisfaction with service. A cross-sectional survey was completed by 494 parents, 324 service providers, and 15 CEOs from 16 organizations delivering children's rehabilitation services. Analyses were completed using a structural equation modelling approach.Results  Survey return rates ranged from 77 to 94%. Findings indicate that the principal determinants of parent satisfaction with services are the family-centred culture at the organization and parent perceptions of FCS. Parent satisfaction with services was also influenced by the number of places where services were received and the number of health and development problems experienced by their child.Conclusion  Parent satisfaction with services is strongly influenced by the perception that services are more family centred, fewer places where services were received and fewer health and development problems for their child. Ways in which organizations can improve satisfaction through carrying out family-centred behaviours are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1365-2214.2003.00351.x
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  • 5
    Digitale Medien
    Digitale Medien
    Microstructural characterization of Fe80B20 eutectic spherulites by small-angle neutron scattering and transmission electron microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2296-2301 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The evolution of the microstructure during the crystallization of amorphous Fe80B20 alloys has been investigated by small-angle neutron scattering (SANS) and transmission electron microscopy (TEM). Samples with an increasing degree of crystallization were obtained by performing different isothermal heat treatments on melt spun amorphous ribbons. The TEM measurements indicate that the crystallization occurs by nucleation and growth of Fe3B spherulites which include small finely divided α-Fe acicular crystallites. On the basis of the TEM results a model for the quantitative analysis of the SANS data has been formulated. The results show that, due to the high growth velocity of the nucleated particles, only their number increases with increasing annealing time, while their size and internal structure is not dependent on the degree of crystallization. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361154
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  • 6
    Digitale Medien
    Digitale Medien
    Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2086-2090 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368355
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  • 7
    Digitale Medien
    Digitale Medien
    X-ray photoelectron diffraction from (3×3) and ((square root of)3×(square root of)3)R 30° (0001)Si 6H–SiC surfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6042-6048 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-resolution (±1°) x-ray photoelectron diffraction (XPD) patterns were obtained along high symmetry azimuths of the (3×3) and ((square root of)3×(square root of)3)R30° reconstructed (0001)Si 6H–SiC surfaces. The data were compared to XPD patterns obtained from (7×7) Si (111) as well as to models proposed for the (3×3) and ((square root of)3×(square root of)3)R30° 6H–SiC reconstructions. Forward scattering features similar to those observed from the (7×7) Si (111) were also observed from the ((square root of)3×(square root of)3)R30° 6H–SiC (0001)Si surface. Additional structures were found and attributed to the substitution of carbon atoms for silicon. Unlike (1×1) and (7×7) Si (111) surfaces, the XPD patterns of (3×3) and ((square root of)3×(square root of)3)R30° SiC (0001)Si surfaces are different which is due to the presence of an incomplete bilayer of Si on the (3×3) surface. The most significant difference with the Si system is the equivalence of the [101¯0] and [011¯0] azimuths in the (3×3) structure. These results are consistent with a faulted Si bilayer stacking sequence which was proposed based on scanning tunneling microscopy observations. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.368879
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  • 8
    Digitale Medien
    Digitale Medien
    Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001¯), and (11¯00) 2H–AlN/6H–SiC interfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4483-4490 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A detailed examination of the valence band discontinuity (ΔEv) formed at the (0001), (0001¯), and (11¯00) interfaces between 2H–AlN and 6H–SiC has been conducted using x-ray and UV photoelectron spectroscopies. The ΔEv was observed to range from 0.6–2.0 eV depending on the growth direction (i.e., AlN on SiC vs SiC on AlN), as well as the crystallographic orientation, cut of the SiC substrate (i.e., on versus off axis), and SiC surface reconstruction and stoichiometry. A ΔEv of 1.4–1.5 eV was observed for AlN grown on (3×3) (0001)Si6H–SiC on-axis substrates; a ΔEv of 0.9–1.0 eV was observed for off-axis substrates with the same surface reconstruction. The values of ΔEv for AlN grown on ((square root of)3×(square root of)3)R30°(0001) 6H–SiC on-and-off-axis substrates were 1.1–1.2 eV. A larger valence band discontinuity of 1.9–2.0 eV was determined for 3C–SiC grown on (0001) 2H–AlN. Smaller values of ΔEv of 0.6–0.7 and 0.8–0.9 eV were observed for AlN grown on on-axis (0001¯)C and (11¯00)6H–SiC substrates, respectively. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371391
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  • 9
    Digitale Medien
    Digitale Medien
    X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5584-5593 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The mechanisms of growth of GaN on AlN and AlN on GaN via gas source-molecular beam epitaxy with NH3 as the nitrogen source have been investigated using x-ray photoelectron spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The growth of GaN on AlN at low temperatures (650–750 °C) occurs via a Stranski–Krastanov 2D→3D type mechanism with the transition to 3D growth occurring at (approximate)10–15 Å. The mechanism changes to Frank van der Merwe (FM)/layer-by-layer growth above 800 °C. The growth of AlN on GaN occurred via a FM layer-by-layer mechanism within the 750–900 °C temperature range investigated. We propose a model based on the interaction of ammonia and atomic hydrogen with the GaN/AlN surfaces which indicates that the surface kinetics of hydrogen desorption and ammonia decomposition are the factors that determine the GaN growth mechanism. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371564
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  • 10
    Digitale Medien
    Digitale Medien
    New Ligands and Improved Enantioselectivities for the Asymmetric Dihydroxylation of Olefins (1995)
    s.l. : American Chemical Society
    The @journal of organic chemistry 60 (1995), S. 3940-3941 
    Details
    ISSN: 1520-6904
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/jo00118a005
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