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  • 1
    Digitale Medien
    Digitale Medien
    Proton-implantation-induced nanosized Ge crystal formation in SiO2:GeO2 glasses (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1357-1363 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nanometer-sized crystalline Ge colloid particles in 9SiO2–1GeO2 glasses were formed by implantation of protons at 1.5 MeV without post-thermal annealing. Although oxygen-deficient type point defects associated with Ge ions were primarily formed to fluences (approximately-less-than)1×1017 cm−2, the formation of Ge fine crystalline particles was observed for fluences (approximately-greater-than)5×1017 cm−2. No formation of Ge colloids and the Ge-related point defects were noted for implantation of 1.5 MeV He+ to a fluence of 1×1018 cm−2. The depth of Ge colloid formation layers was 22–26 μm from the implanted surface. This depth region agreed well with the peak region of electronic energy deposition. Ge–OH groups were formed preferentially over Si–OH groups upon implantation of protons and the decay curve upon isochronal annealing was close to that of the optical absorption at ∼3 eV, which was attributed to nanometer-sized Ge. A red photoluminescence peaking at ∼1.9 eV was observed for all the implanted substrates. A tentative formation mechanism of Ge colloids in these glasses was proposed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362935
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  • 2
    Digitale Medien
    Digitale Medien
    Fast proton conducting glasses: Creation by proton implantation and a requirement for fast proton conduction (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1296-1301 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Fast proton conducting glasses have been obtained in Mg(PO3)2 glasses by implantation of protons at 120 keV to a fluence of 1×1018 cm−2. The dc conductivity and the activation energy of the conduction in the implanted glasses are 5×10−4 s cm−1 at room temperature and 0.18 eV, respectively. No fast proton conduction was observed for H+-implanted SiO2 and Ca(PO3)2 glasses. Infrared absorption spectra revealed that implanted protons are present in the form of X–OH (X=Si or P) in SiO2 and Ca(PO3)2 glasses implanted with H+ ions to 1×1018 cm−2, but exist as POH groups and molecular water H2O in Mg(PO3)2 glasses. A quantitative discussion on the proton conductivity led to the conclusion that the coexistence of acidic groups such as POH and molecular water H2O is a structural requirement for the emergence of fast proton conduction in oxide glasses. The formation of H2O in Mg(PO3)2 was understood by considering its thermodynamic stability over SiO2 and Ca(PO3)2 glasses. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363908
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  • 3
    Digitale Medien
    Digitale Medien
    Nanometer-scale heterogeneity in SiO2–GeO2 glass preforms and fibers prepared by vapor phase axial deposition method (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3115-3117 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nanometer-scale heterogeneity of Ge ions in SiO2:GeO2 (10–15 mol %) glass preforms prepared by vapor phase axial deposition method and in optical fibers drawn from the preform was found by transmission electron microscopic observation. Both preforms and fibers were comprised of 8–10 nm sized Ge-rich and Si-rich phases. Observation of Ge E′ centers in the as-prepared state and the formation of Ge E′ centers with light illumination with 5 eV-light may be understood by the occurrence of these heterogeneity. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363122
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  • 4
    Digitale Medien
    Digitale Medien
    Positive nonlinear index of refraction in tellurium dioxide single crystals above the two-photon absorption edge (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5840-5841 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A phase distortion method is applied to examine the optical nonlinearity in tellurium dioxide single crystal. The positive nonlinear index of refraction is observed in the crystal at above the two-photon absorption edge. While the observed positive sign is consistent with that predicted theoretically, the absolute values of both nonlinear index of refraction and two-photon absorption coefficient are larger than the theoretical values by a factor of five. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359653
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  • 5
    Digitale Medien
    Digitale Medien
    Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4159-4163 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electrical and optical properties of CuAlO2, a p-type conducting transparent oxide, were examined for the thin films prepared by the pulsed laser deposition technique. The indirect and direct allowed optical band gaps were evaluated to be ∼1.8 and ∼3.5 eV, respectively. The conductivity at 300 K was ∼3×10−1 S cm−1 and its temperature dependence is of the thermal-activation type (activation energy (approximate)0.2 eV) at temperatures 〉220 K but is of the variable-range hopping type (log σ∝T−1/4) at 〈220 K. It was inferred that an admixed state of Cu 3d and O 2p primarily constitutes the upper valence band, which controls transport of positive holes, from a combined information on ultraviolet photoemission spectrum with x-ray photoemission spectrum. An energy band calculation by full-potential linearized augmented plane wave method substantiated the experimental findings. The present results gave a solid basis for our working hypothesis [Nature (London) 389, 939 (1997)] for chemical design of p-type conducting transparent oxides. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1308103
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  • 6
    Digitale Medien
    Digitale Medien
    Long lasting phosphorescence and photostimulated luminescence in Tb-ion-activated reduced calcium aluminate glasses (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3729-3733 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Long lasting phosphorescence (LLP) and photostimulated luminescence (PSL) were found in reduced calcium aluminate glasses activated with Tb3+ ions. The LLP from Tb3+ was observed by illuminating the Tb3+ 4f→5d charge transfer band with ultraviolet (UV) 254 nm light, while the PSL was seen by stimulating the UV-illuminated glasses with 633 nm light. The decay curve of the LLP was fitted with a second-order kinetic for the initial period (0〈t〈20 min) and a first-order kinetic for the later (t〉30 min). An electron paramagnetic resonance (EPR) signal, which is attributed to an F+-like center associated with Ca2+ ions, was induced by illumination with UV light and its intensity decay was fitted with a first-order kinetic similarly to the later stage of the LLP. The appearance of the PSL by illumination is accompanied by a distinct intensity reduction of the EPR signal due to the F+-like center. The thermoluminescence spectra of the specimen illuminated with UV light at 77 K consist of two components peaking at ∼240 and ∼390 K. The low temperature component and the high temperature component were attributed to an F-like center and an F+-like center, respectively. These results lead to a conclusion that electrons of the F-like center and the F+-like center contribute predominantly to the emergence of the LLP and the PSL, respectively. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371243
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  • 7
    Digitale Medien
    Digitale Medien
    ArF excimer laser irradiation effects in AlF3-based fluoride glasses for vacuum ultraviolet optics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3038-3043 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Color center formation in AlF3–YF3–RF2 (R=alkaline earth metal) glasses doped with PO2.5 (0–3 mol %) by irradiation with ArF excimer laser light was examined by optical absorption (vacuum ultraviolet–visible) and electron paramagnetic resonance (EPR) spectroscopies. Concentrations of impurity iron in all the glasses and oxygen in the P-free samples were ∼0.2 and ∼450 ppm, respectively. Optical absorption ranging from 2–8 eV was induced via one-photon absorption processes. The optical band dominating the transmission loss at 193 nm has a peak at 5 eV in the P-free glasses or a peak at 6.9 eV in the P-doped glasses. The origins of the 5 and 6.9 eV bands were tentatively ascribed to an oxygen-related hole center giving an EPR signal with a width of 7.2 mT at g=2.0097 and P E′ center giving a hyperfine doublet with a separation of ∼70 mT. Provided these correspondences, then the values of oscillator strength for the 5 and 6.9 eV bands were calculated as ∼0.15 and ∼0.1, respectively. No formation of color centers associated with intrinsic constituents such as Al, Y, R, and F ions, was observed. The present results suggest that the reduction of impurity oxygen content is a route to effectively suppress the solarization in the P-free AlF3-based glasses. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.369640
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  • 8
    Digitale Medien
    Digitale Medien
    Preparation of n-type conductive transparent thin films of AgInO2:Sn with delafossite-type structure by pulsed laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3067-3069 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Sn-doped AgInO2 thin films were prepared on α-Al2O3(0001) single-crystal substrates by pulsed laser deposition. The films prepared under optimized conditions have high optical transmittance up to the near-ultraviolet region and high electrical conductivity. The optical band gap was estimated to be ∼4.1 eV, and electrical conductivity was 7.3×101 S cm−1 at 300 K. The carrier concentration and Hall mobility at 300 K were 3.3×1020 cm−3 and 1.4 cm2 V−1s−1, respectively. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1287404
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  • 9
    Digitale Medien
    Digitale Medien
    Generation mechanisms of paramagnetic centers by gamma-ray irradiation at and near the Si/SiO2 interface (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8519-8525 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pb (⋅Si≡Si3) and E' (⋅Si≡O3) centers in the Si/SiO2 structure under gamma-ray radiation are studied with the electron-spin-resonance technique. The Si/SiO2 structures of (111), (110), and (100) planes are obtained using three different oxidation methods to control the concentration of the hydrogen-related impurities. It is first observed that the concentration of Pb centers is decreased with increasing radiation dosage in samples with lower concentrations of impurities; the concentration dramatically increases in the samples with a higher concentration of impurities. The concentration of E' centers also increases with accumulated dosage. When the Si/SiO2 structure is fabricated under different oxidation temperatures, the saturated concentrations of Pb centers after irradiation depend upon the oxidation temperature. The concentration of E' centers increases with oxidation temperature after irradiation. When the Si/SiO2 structure is fabricated under different cooling rates, concentrations of the Pb centers are saturated after irradiation. The concentration of E' centers increases with increasing cooling rate.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353380
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  • 10
    Digitale Medien
    Digitale Medien
    Effects of oxidation conditions on the formation of paramagnetic centers at and near the Si/SiO2 interface (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2979-2985 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: To discern the most important parameter determining the concentration of paramagnetic centers, the effects of chemical treatments before and/or after oxidation, the type of furnaces, the cooling rate after oxidation, and oxidation temperature were examined. The effects of chemical treatments for cleaning on Pb and E' centers before and/or after oxidation were negligible. Two types of furnaces were prepared: One where contamination by the outer air could be prevented and one where it could not be prevented, called an air-removed furnace and a conventional furnace, respectively. The concentration of Pb and E' centers at the Si/SiO2 interface fabricated in a conventional furnace was, however, drastically smaller than that fabricated in an air-removed furnace. The cooling rate after oxidation did not determine the concentration of E' centers but affected Pb centers. The oxidation temperature also determined the concentration of both Pb and E' centers. It was found that the parameter most effective in determining the concentration of paramagnetic centers was the type of furnace, whether there was contamination from air or not. The paramagnetic centers (such as Pb and E' centers) react with some element(s) in the air. It is expected that such elements are not N2 gas but hydrogen-related impurities in the air, perhaps H2O.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349325
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