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Digitale Medien

Low-dose nitrogen implants in 6H–silicon carbide (2000)

Saks, N. S. ; Agarwal, A. K. ; Mani, S. S. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 1896-1898

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Low-dose n-type nitrogen implants in 6H–SiC have been studied using the Hall effect. Previous studies of doping by implantation in SiC have concentrated on heavily doped layers such as required for transistor sources and drains. Here, we focus on more lightly doped layers, e.g., such as required for the active regions of high-voltage power devices. The low-dose N implants are found to activate more readily than high doses. Almost ideal N-implanted layers with a donor density of ∼1×1017/cm3 and a low residual acceptor density from implant damage of only ∼1.5×1015/cm3 have been obtained after a 1400 °C anneal. © 2000 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.126204

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