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  • 1990-1994
  • 1985-1989  (3)
  • 1915-1919
  • 1985  (3)
Materialart
Erscheinungszeitraum
  • 1990-1994
  • 1985-1989  (3)
  • 1915-1919
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5279-5286 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have extended the Kobayashi, Sankey, and Dow [Phys. Rev. B 25, 6367 (1982)] theory of deep levels in Hg1−xCdxTe to include (vacancy, impurity) nearest-neighbor pairs. In qualitative agreement with the results obtained by these workers for isolated point defects, we find that the composition dependences (dE/dx) of the defect energy levels associated with such complexes depend on the site occupied by the impurity atom. Furthermore, we find that the composition dependences of some of the defect levels produced by such a complex are very different than the dE/dx of levels associated with the corresponding isolated point defects. We thus suggest that this theory can often be used as an aid in the identification of the defect center producing an observed energy level. In particular, it can be used to obtain site information about an observed level and, in favorable cases, to distinguish between levels produced by isolated point defects and those produced by complexes. As an example, we compare our theoretical predictions for the dE/dx of levels associated with (vacancy, impurity) pairs to the experimental slopes of the energy levels observed in deep level transient spectroscopy by Jones, Nair, and Polla [Appl. Phys. Lett. 39, 248 (1981)] and find that the theory lends support to these workers' interpretation of their data. In addition, we present new photoluminescence data on both a previously observed and identified acceptor and on an unknown center in Hg1−xCdxTe. As a further example of the usefulness of our theory, we compare the theoretical slopes of energy levels associated with (vacancy, impurity) pairs with the composition dependences of the defect levels extracted from the photoluminescence data. The results of both of the theoretical-experimental comparisons show that the theory can be used successfully, in conjunction with experimental data, to aid in the identification of the defect center which produces an observed energy level.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    ISSN: 1434-601X
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The reaction64Ni(36S,34Si)66Zn atE=198 MeV has been used to measure the mass excess of34Si; a value of −19.971 −0.044 +0.037 MeV was obtained. This result which is in agreement with the previous value (−19.85±0.30 MeV) is in excellent agreement with recent shell-model mass predictions. The result is discussed within the context of the proposed region of deformation aroundZ=11,N=20.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Entomologia experimentalis et applicata 37 (1985), S. 306-306 
    ISSN: 1570-7458
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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