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  • 2000-2004  (14)
  • 1995-1999  (11)
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  • 1
    Digitale Medien
    Digitale Medien
    Fine structure of boron nitride nanotubes produced from carbon nanotubes by a substitution reaction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2364-2366 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Here we report on the precise structural investigation of multiwalled boron nitride (BN) nanotubes by means of high-resolution transmission electron microscopy and electron energy loss spectroscopy. The nanotubes were produced from carbon nanotubes by applying a recently discovered technique: a substitution chemical reaction [W. Han, Y. Bando, K. Kurashima, and T. Sato, Appl. Phys. Lett. 73, 3085 (1998)]. It is found that in contrast to the starting carbon nanotubes, which exhibited large number of shells (typically 〉10), a significant proportion of buckled and corrugated graphene-like sheets, poor degree of graphitization, and wide distribution of helicities, the resultant BN nanotubes revealed perfectly straight shapes, limited number of shells (typically 2–6), and remarkable ordering of the graphene-like sheets in the so-called nonhelical "zig-zag" fashion with the [101¯0] direction parallel to the tube axis. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371058
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  • 2
    Digitale Medien
    Digitale Medien
    Si3N4/SiC interface structure in SiC-nanocrystal-embedded α-Si3N4 nanorods (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1515-1519 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si3N4/SiC interface structure in SiC-nanocrystal-embedded α-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded α-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., [11¯0]SiC//[0001]Si3N4 and nearly (111)SiC//(101¯0)Si3N4 with low-angle discrepancy of either 3° or 5°. The origin of the low-angle discrepancies was explained in terms of a reciprocal lattice theory for heteroepitaxial interfaces. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1428106
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  • 3
    Digitale Medien
    Digitale Medien
    High-resolution transmission electron microscopy of cubic Si3N4 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3070-3072 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A cubic Si3N4 phase/nanostructure has been characterized by means of high-resolution analytical electron microscopy. The specimen prepared from β-Si3N4 powders at a high pressure and temperature by shock wave compression contained nanometer-sized Si3N4 crystallites. The results of nano-beam electron diffraction analysis and high-resolution lattice images as well as computer simulations revealed that the Si3N4 crystallites had a cubic symmetry with spinel structure. The electron energy loss spectrum suggested that the chemical compositions of these nanostructures were close to Si3N4. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1287765
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  • 4
    Digitale Medien
    Digitale Medien
    Erratum: Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation [J. Appl. Phys. 76, 7833 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6073-6073 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359616
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  • 5
    Digitale Medien
    Digitale Medien
    Octahedral boron nitride fullerenes formed by electron beam irradiation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2441-2443 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Here we report on the formation of fullerenes with a reduced number of layers (typically ≤3) in boron nitride (BN) which was subjected to in situ electron irradiation at 20 and 490 °C in a high resolution 300 kV transmission electron microscope (HRTEM). The BN fullerenes exhibited B/N stoichiometry of ∼1 as confirmed by electron energy loss spectroscopy using a 1 nm electron probe. The fullerene HRTEM images revealed rectangle-like shapes when viewed in specific projections, unlike the quasispherical carbon fullerene morphology. The octahedral BN fullerene model [O. Stéphan, Y. Bando, A. Loiseau, F. Willaime, N. Shramchenko, T. Tamiya, and T. Sato, Appl. Phys. A 67, 107 (1998)] is verified by the BN fullerene observations at different viewing angles. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.122475
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  • 6
    Digitale Medien
    Digitale Medien
    Valence evaluation of cerium ions in Ce-doped α-sialon by electron energy loss spectra (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5469-5472 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: For a long time cerium ions, both Ce3+ and Ce4+, have not been considered to be able to enter the interstitial sites in an α-sialon structure until recent successes in the preparation of cerium-doped α-sialon materials using CeO2 as the starting powder. It is then of great importance and necessity to know the chemical valence of these incorporated cerium ions. Meanwhile, the specific structure of the interstices in α-sialon provides quite a different chemical environment upon which the electronic structures of cerium ions could be different from those ever reported in, for instance, metallic compounds and oxides. Electron energy loss spectra (EELS) in the M-edge region of rare-earth elements carries information on the initial state 4f occupancy. We have acquired and examined the M4,5-edge spectra of cerium at different locations in the microstructure. It has been found that all the Ce(IV) ions in the intergranular glass and the majority inside the α-sialon crystals have been reduced to Ce(III) while there exist inside the crystal cerium ions showing 4f0 initial-state peaks on the EELS spectrum. The 4f0 peak locates at about 0.6 eV higher in energy than that for CeO2. An increased and possibly by far the highest weight of f0 state is derived for Ce(IV) ions in α-sialon. The spectral evidences confirm the general suggestion of the unstability of Ce(IV) ions with silicon nitride. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1365433
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  • 7
    Digitale Medien
    Digitale Medien
    Boron-doped carbon fullerenes and nanotubules formed through electron irradiation-induced solid-state phase transformation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2108-2110 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Here we report on the in situ creation of single/multi-shelled fullerenes and multi-walled nanotubules by electron irradiation of chemical vapor deposit graphitic BxC1−x (x≤0.2) in a high-resolution 300 kV electron microscope. Nanostructure formation occurred through irradiation-induced solid-state phase transformation, in contrast to conventional fullerene/nanotube synthesis from the gas phase. The fullerene/nanotubule chemical composition and bonding character were analyzed by electron energy loss spectroscopy applying a &nullset;0.5 nm electron probe. The B/C ratio of the observed curled, closed nanostructures has never exceeded ∼0.1. Unlike pure carbon "onions," most of the B-doped fullerenes exhibited a polyhedral faceted circumference suggestive of B-induced buckling. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121291
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  • 8
    Digitale Medien
    Digitale Medien
    Nanotubes in boron nitride laser heated at high pressure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2045-2047 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Here we report on the finding of pure boron nitride (BN) nanotubes that do not contain any additional inclusions and on a new method for their growth: laser heating of boron nitrides at high nitrogen pressure (5–15 GPa). The multiwalled nanotubes were observed using high resolution electron microscopy and were chemically characterized by electron energy loss spectroscopy. The circular or polygonal cross-sectional nanotubes, which have 3–8 shells and a characteristic outer dimension cross section of 3–15 nm, were found to have grown either in melted cubic BN or in hexagonal+amorphous BN that had recrystallized on the specimen's surface from the fluid phase. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116874
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  • 9
    Digitale Medien
    Digitale Medien
    Transmission electron microscopy study of interface and internal defect structures of homoepitaxial diamond (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2070-2072 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Defect structures in a homoepitaxial diamond film grown by chemical vapor deposition have been studied by cross-sectional transmission electron microscopy. Many interstitial dislocation loops are discerned in the (001) interface. The internal region grown on the (11¯1) facet comprises stacking faults and twins, while that on the (001) face contains mainly interstitial dislocation loops aligned in rows along ∼〈112〉 directions. Fe and Si impurities were detected only at the interface by analytical electron microscopy. The origin of the defects is briefly discussed. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116306
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  • 10
    Digitale Medien
    Digitale Medien
    Onionlike structures and small nested fullerenes formation under electron irradiation of turbostratic BC2N (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2383-2385 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Turbostratic BC2N samples were exposed to intense irradiation regimes in a high resolution electron microscope equipped with a field emission gun. Electron energy loss spectroscopy (EELS) analysis was used to check the sp2-bonding type and the composition of the starting materials. In highly crystalline areas, we observed a tendency for the basal planes to curl and form large "open" onionlike features. According to EELS quantification, no change of the composition occurs during their formation. Very occasionally, small nested fullerenes of less than 10 shells each with dimensions of the very internal shell close to that of a C60 were observed. These onions are thought to arise from the bending of a few basal planes of the planar starting material. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118879
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