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  • 1995-1999  (4)
Datenquelle
Materialart
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    Recombination-Enhanced Migration of Interstitial Iron in Silicon (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 1351-1356 
    Details
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.196-201.1351.pdf
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Growth kinetics of CoSi formed by ion beam irradiation at room temperature (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5480-5483 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Growth kinetics of cobalt silicide layers formed by ion beam irradiation was investigated at a temperature between room temperature and 100 °C. The CoSi phase was identified by x-ray diffraction of Co/Si samples irradiated with 25 keV argon ions to a dose of 2.0×1015 cm−2. The number of intermixed silicon atoms in the CoSi layers was evaluated as a function of dose, dose rate, and nuclear energy deposition rate at the Co/Si interface for samples irradiated with 40 keV focused silicon ion beams. The growth is shown to be diffusion-limited and attributed to radiation-enhanced diffusion with an activation energy of 0.16 eV. The number of intermixed silicon atoms is approximately proportional to the nuclear energy deposition rate at the initial Co/Si interface, while it is independent of dose rate, which shows that the CoSi phase is formed without contribution of the sample heating caused by irradiation. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366460
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  • 3
    Digitale Medien
    Digitale Medien
    Deep level of iron-hydrogen complex in silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3828-3831 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Deep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of EV+0.31 and EV+0.41 eV. The trap of EV+0.41 eV is a donor due to interstitial iron. The trap of EV+0.31 eV, due to a complex of interstitial iron and hydrogen, is observed in the sample etched chemically with an acid mixture containing HF and HNO3 and annihilates after annealing at 175 °C for 30 min. It is demonstrated that interstitial 3d transition metals such as vanadium, chromium, and iron tend to form complexes with hydrogen in n-type silicon, and the complexes induce donor levels below the donor levels of the isolated interstitial species. This trend is related to the interaction between the metals and hydrogen in the complexes. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.365746
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  • 4
    Digitale Medien
    Digitale Medien
    Deep states in silicon on sapphire by transient-current spectroscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5262-5264 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is demonstrated that deep states in silicon on sapphire (SOS) films can be evaluated by transient-current spectroscopy (TCS). In the TCS spectra, a broad peak extending over 100–200 K was observed for the 6000-Å-thick n-type SOS film. Assuming the value of capture cross section to be 10−15 cm2 and independent of temperature, the density distribution of deep states was estimated. The density distribution shows a peak of 1.2×1012 cm−2 eV−1 at EC−0.25 eV. Raman backscattering spectroscopy was also performed to evaluate the stress in the silicon film. It was concluded that the defects detected by TCS should be caused by the compressive stress of 6.2×108 Pa in the silicon film. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366394
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