Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Deep Levels of Vanadium- and Chromium-Hydrogen Complexes in Silicon (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 143-147 (Oct. 1993), p. 939-944 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.143-147.939.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 143-147 (Oct. 1993), p. 1191-1196 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.143-147.1191.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Recombination-Enhanced Migration of Interstitial Iron in Silicon (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 1351-1356 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.196-201.1351.pdf
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Deep levels of vanadium and vanadium-hydrogen complex in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 520-524 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of EC−0.20 eV and EC−0.45 eV, and a hole trap of EV+0.34 eV. These three levels correspond to the transitions between four charge states of interstitial vanadium. Furthermore, an electron trap of EC−0.49 eV is observed near the surface region of n-type samples etched with an acid mixture containing HF and HNO3. The origin of the trap has precisely been investigated by isochronal anneals and various chemical treatments. From these investigations, it is found that the trap is due to a complex of interstitial vanadium with hydrogen introduced by chemical etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352353
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Deep levels of chromium-hydrogen complexes in silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3978-3981 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of EC−0.22, EC−0.28, EC−0.45, and EC−0.54 eV in chromium-doped samples. The trap of EC−0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO3 and annihilate after annealing at 175 °C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356018
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Hole traps of metastable iron-boron pairs in silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2803-2808 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole traps of configurationally metastable iron-boron pairs in p-type silicon are studied using deep level transient spectroscopy, thermally stimulated capacitance, and single shot techniques combined with minority-carrier injection. Two levels at EV+0.53 and 0.48 eV are observed as the metastable pairs after the injection at 150 K. The level at 0.53 eV consists of two traps vanishing with different decay rates at around 220 K, while the level at 0.48 eV annihilates with simple exponential form. The decay rate for each trap has a thermal activation energy of ∼0.7 eV and shows a single jump process of interstitial iron from one configuration to another. These new traps of iron-born pairs are discussed with the aid of configuration-coordinate description within the framework of the simple ionic model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353056
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Effects of ion irradiation on silicon oxidation in electron cyclotron resonance argon and oxygen mixed plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1664-1669 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of ion irradiation on oxidation of silicon at a temperature as low as 130 °C in an argon and oxygen mixed plasma excited by electron cyclotron resonance interaction have been investigated. The growth rate of the oxide films increases with increasing incident energy and flux of argon ions, and the thickness increases proportionally to the root square of the oxidation time, which suggests that the growth rate is limited by diffusion of oxidants enhanced by irradiation with argon ions. Effects of substrate bias on the oxidation characteristics have been also investigated. The growth rate increases with increasing positive bias, and the growth kinetics deviate from diffusion limited with increasing thickness. The bias dependence of the growth rate is caused by drift of negative oxidants enhanced by the electric field established in the oxide films. Moreover, it is shown that the electrical properties of the oxide films are improved by applying positive substrate bias. The improvement is due to a reduction of irradiation-damage in the initial oxidation stage. On the basis of the experimental results, it is concluded that the reduction of the incident energy and the flux of argon ions in the initial oxidation stage is essential to improve electrical properties of the oxide films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373868
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Growth kinetics of CoSi formed by ion beam irradiation at room temperature (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5480-5483 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth kinetics of cobalt silicide layers formed by ion beam irradiation was investigated at a temperature between room temperature and 100 °C. The CoSi phase was identified by x-ray diffraction of Co/Si samples irradiated with 25 keV argon ions to a dose of 2.0×1015 cm−2. The number of intermixed silicon atoms in the CoSi layers was evaluated as a function of dose, dose rate, and nuclear energy deposition rate at the Co/Si interface for samples irradiated with 40 keV focused silicon ion beams. The growth is shown to be diffusion-limited and attributed to radiation-enhanced diffusion with an activation energy of 0.16 eV. The number of intermixed silicon atoms is approximately proportional to the nuclear energy deposition rate at the initial Co/Si interface, while it is independent of dose rate, which shows that the CoSi phase is formed without contribution of the sample heating caused by irradiation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366460
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Deep level of iron-hydrogen complex in silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3828-3831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of EV+0.31 and EV+0.41 eV. The trap of EV+0.41 eV is a donor due to interstitial iron. The trap of EV+0.31 eV, due to a complex of interstitial iron and hydrogen, is observed in the sample etched chemically with an acid mixture containing HF and HNO3 and annihilates after annealing at 175 °C for 30 min. It is demonstrated that interstitial 3d transition metals such as vanadium, chromium, and iron tend to form complexes with hydrogen in n-type silicon, and the complexes induce donor levels below the donor levels of the isolated interstitial species. This trend is related to the interaction between the metals and hydrogen in the complexes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365746
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Deep states in silicon on sapphire by transient-current spectroscopy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5262-5264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that deep states in silicon on sapphire (SOS) films can be evaluated by transient-current spectroscopy (TCS). In the TCS spectra, a broad peak extending over 100–200 K was observed for the 6000-Å-thick n-type SOS film. Assuming the value of capture cross section to be 10−15 cm2 and independent of temperature, the density distribution of deep states was estimated. The density distribution shows a peak of 1.2×1012 cm−2 eV−1 at EC−0.25 eV. Raman backscattering spectroscopy was also performed to evaluate the stress in the silicon film. It was concluded that the defects detected by TCS should be caused by the compressive stress of 6.2×108 Pa in the silicon film. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366394
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...