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  • Digitale Medien  (20)
  • 1990-1994  (20)
  • 1
    Digitale Medien
    Digitale Medien
    Applications of intense pulsed ion beam to materials sciencef| (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 1730-1737 
    Details
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In addition to being initially developed as an energy driver for an inertial confinement fusion, an intense, pulsed, light-ion beam (LIB) has been found to be applied to materials science. If a LIB is used to irradiate targets, a high-density "ablation'' plasma is produced near the surface since the range of the LIB in materials is very short. Since the first demonstration of quick preparation of thin films of ZnS by an intense, pulsed, ion-beam evaporation (IBE) using the LIB-produced ablation plasma, various thin films have been successfully prepared, such as of ZnS:Mn, YBaCuO, BaTiO3, cubic BN, SiC, ZrO2, ITO, B, C, and apatite. Some of these data will be presented in this paper, with its analytic solution derived from a one-dimensional, hydrodynamic, adiabatic expansion model for the IBE. The temperature will be deduced using ion-flux signals measured by a biased ion collector. Reasonable agreement is obtained between the experiment and the simulation. High-energy LIB implantation to make chemical compounds and the associated surface modification are also discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.870677
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  • 2
    Digitale Medien
    Digitale Medien
    Results of a new "OCTOPUS'' ECR ion source at 6.4 GHz : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 265-266 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: The first OCTOPUS electron cyclstron resonance (ECR) multicharged heavy ion source was built in 1985 at the Centre de Recherches du Cyclotron of the University of Louvain (Belgium). This first source used an ECR frequency of 14.3 GHz in the injector stage and 8.5 GHz in the main confinement stage. A new OCTOPUS source has now been built for a new cyclotron to be installed at the Japan Atomic Energy Research Institute (JAERI). The design of this new OCTOPUS source is identical to the first OCTOPUS source, but uses an ECR frequency of 6.4 GHz in the main confinement stage. The experimental results are described, and a comparison is made between the two sources. However, the available data does not allow any clear conclusion to be drawn on frequency scaling.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1141315
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  • 3
    Digitale Medien
    Digitale Medien
    Superleak-tight cold valve testable at room temperature (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 841-841 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: In order to obtain a reliable cold valve (or low temperature valve) which can be tested at room temperature, several combinations of hard material for the valve stem tip and soft material for the valve seat were tested. The combination of Be-Cu and Ag gave satisfactory performance.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1142046
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  • 4
    Digitale Medien
    Digitale Medien
    Effect of oxygen plasma annealing on superconducting properties of Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 575-577 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of the Bi2(Sr,Ca)3Cu2Ox and YBa2Cu3O7−δ system were annealed at 400 °C in a high-density oxygen plasma and its effect on superconducting properties was investigated. After being annealed in the oxygen plasma, their superconducting transition temperatures decreased by about 10 K and 2 K, respectively, and the c-axis lattice constants of these films were also found to decrease as a result of the annealing in the oxygen plasma. These results suggest that excessive oxygen incorporated into the films by the annealing in the oxygen plasma caused the excessive hole carriers, which deteriorated the superconducting transition temperatures of these films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103302
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  • 5
    Digitale Medien
    Digitale Medien
    Epitaxial growth study of Bi2(Sr,Ca)3Cu2Ox films on cleaved MgO substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In situ epitaxial growth of Bi2(Sr0.6Ca0.4)3Cu2Ox films by ion beam sputtering on cleaved MgO substrates was studied. The crystallographic structures were analyzed by in situ reflection high-energy electron diffraction, a four-circle x-ray diffractometer, and a scanning electron microscope. While the epitaxial films on polished MgO substrates commonly showed the fourfold symmetry, epitaxial films having twofold symmetry were grown on cleaved MgO substrates and the films contained two types of equivalently misoriented domains. The epitaxial relationship between these domains and cleaved MgO substrates was such that the b axis of each domain deviated approximately ±13° from [010]MgO where the cleavage steps ran along [100]MgO. The step edges seemed to play an important role in the occurrence of the twofold epitaxial relationship, where the incommensurate modulation tended to align its direction so as to avoid the step edges.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104381
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  • 6
    Digitale Medien
    Digitale Medien
    In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films by ion beam sputtering with an atomic oxygen source (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 295-297 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films was performed by ion beam sputtering in atomic oxygen ambience at the substrate temperature of 640 °C. The films showed an epitaxial growth in which the a and b axes were parallel to 〈100〉 MgO, and the superstructure according to the incommensurate modulation along the b axis was also observed. The superconducting properties of the as-grown films seemed to sensitively depend on the oxidation treatment during the cooling down process. The zero resistivity temperature Tc(R=0) of a 600-A(ring)-thick film cooled down in the same atomic oxygen density as the film growth ambience was 60 K, but it increased up to 80 K after a post-deposition annealing at 500 °C for 1 h in air. In contrast, as-grown films cooled down in insufficient oxidation ambience showed the Tc(R=0) of 76 K without post-deposition annealing. The control of the oxygen concentration is critical for the superconductivity of as-grown films.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103286
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  • 7
    Digitale Medien
    Digitale Medien
    Fabrication of Josephson junctions using heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1685-1687 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated Josephson junctions from c-axis oriented heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films. The junctions showed resistively shunted junctionlike characteristics up to 30 K. Several junctions showed hysteresis at low temperatures. The highest value of the product of the critical current and the normal state resistance of the junctions was about 0.2 mV. Clear Shapiro steps at the expected voltages were observed in the presence of external microwave irradiation. The height of these steps oscillated to full suppression as a function of the microwave source power. Moreover the periodic magnetic field dependence of the critical current was clearly observed. These results indicated a good uniformity in the Josephson current distribution in these junctions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109576
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  • 8
    Digitale Medien
    Digitale Medien
    In-plane anisotropic transport properties observed in epitaxial Bi2(Sr,Ca)3Cu2Ox films grown on tilted (001)SrTiO3 substrate (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2445-2447 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on large in-plane anisotropic transport properties observed in epitaxial Bi2(Sr,Ca)3Cu2Ox films grown on tilted (001)SrTiO3 substrate. By tilting the surface normal axis about 4° toward [111]SrTiO3, regular steps and terraces were formed on the substrate surface and perfect alignment of film b axis with incommensurate modulation along [110]SrTiO3 was realized. The film c axis was perpendicular to the (001)SrTiO3 terrace, thus the film c axis grew tilted 4° toward [111] from surface normal due to the surface inclination. In those epitaxial configurations, the in-plane resistivity along the step direction(ρ[110]) involved the contribution from the c-axis(ρc) component, and we observed the large resistivity anisotropy between a- and b- direction of the film. The transport along a axis(ρa) showed a low resistivity with metallic temperature dependence while the resistivity along the step direction(ρ[110]) was higher and semiconductive. The ratio of ρc/ρa ≈ 104 estimated in this experiment agrees well with the anisotropy observed in the bulk single crystal.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105990
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  • 9
    Digitale Medien
    Digitale Medien
    Spiral growth of C60 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1008-1010 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have observed the spiral growth of C60 grown on cleaved graphite using atomic force microscopy. Triangular terraces in the spirals consist of a monolayer of C60 having a 10 A(ring) step height which agrees well with (111) lattice constant of fcc-C60. One of the characteristic features of the C60 spiral is the presence of a line defect running from the spiral core and crossing the spiral terraces. As a result, the original helicoid plane transforms into a stack of terraces. We think the C60 spiral growth is terminated by the introduction of a line defect at the early stages of the film growth, resulting from the weak van der Waals forces.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109879
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  • 10
    Digitale Medien
    Digitale Medien
    Structure and Function of Signal-Transducing GTP-Binding Proteins (1991)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biochemistry 60 (1991), S. 349-400 
    Details
    ISSN: 0066-4154
    Quelle: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Thema: Chemie und Pharmazie , Biologie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1146/annurev.bi.60.070191.002025
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