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  • 1
    Digitale Medien
    Digitale Medien
    Rotational isomerism inbis carbene MOL4 complexes: A theoretical study (1984)
    Springer
    Theoretical chemistry accounts 64 (1984), S. 461-467 
    Details
    ISSN: 1432-2234
    Schlagwort(e): Carbene rotational barriers ; Isolobal analogy ; Ab-initio SCF calculations
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract LCAO-MO-SCF calculations are reported for the different stereoisomers of the Mo(CO)4(CH2)2 and Mo(CO)4[C(NH2)2]2 systems. The substitution of the hydrogen atoms by the amino groups in the carbene ligands leads to an almost zero rotational barrier. Steric interactions are therefore expected to govern the barrier for diaminocarbene ligands which are more bulky than C(NH2)2. The rotational isomerism in thesebis carbene MoL4 systems is also discussed in connection with the isolobal analogy between CH2 and C2H4.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF02399238
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  • 2
    Digitale Medien
    Digitale Medien
    Rotational isomerism inbis carbene MOL4 complexes: A theoretical study (1984)
    Springer
    Theoretical chemistry accounts 64 (1984), S. 461-467 
    Details
    ISSN: 1432-2234
    Schlagwort(e): Carbene rotational barriers ; Isolobal analogy ; Ab-initio SCF calculations
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie
    Notizen: Abstract LCAO-MO-SCF calculations are reported for the different stereoisomers of the Mo(CO)4(CH2)2 and Mo(CO)4[C(NH2)2]2 systems. The substitution of the hydrogen atoms by the amino groups in the carbene ligands leads to an almost zero rotational barrier. Steric interactions are therefore expected to govern the barrier for diaminocarbene ligands which are more bulky than C(NH2)2. The rotational isomerism in thesebis carbene MoL4 systems is also discussed in connection with the isolobal analogy between CH2 and C2H4.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00554231
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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    Artikel (Nationallizenzen)
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  • 3
    Digitale Medien
    Digitale Medien
    Measurement of the thermal conductivity of molten semiconductors (1988)
    Springer
    International journal of thermophysics 9 (1988), S. 933-940 
    Details
    ISSN: 1572-9567
    Schlagwort(e): alumina ; high temperature ; InSb ; thermal conductivity ; transient hot-wire method
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The thermal conductivity of molten InSb in the temperature range between 800 and 870 K was measured by the transient hot-wire method using a ceramic probe. The probe was fabricated from a tungsten wire printed on an alumina substrate and coated with a thin alumina layer. The thermal conductivity was found to be about 18 W· m−·K−at the melting point and increased moderately with increasing temperature. The thermal conductivity of alumina used as the substrate for the probe was also measured in the same temperature range.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01133261
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Measurement of the thermal conductivity of molten InSb under microgravity (1991)
    Springer
    International journal of thermophysics 12 (1991), S. 783-790 
    Details
    ISSN: 1572-9567
    Schlagwort(e): InSb ; microgravity ; molten InSb ; thermal conductivity ; transient hot-wire method ; space experiment
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Thermal conductivity of molten InSb was measured on board the TEXUS-24 sounding rocket by the transient hot-wire method using the originally designed thermal conductivity measurement facility (TCMF). Measurements made through this facility were affected by natural convection on the ground. This natural convection was confirmed to be sufficiently suppressed during a microgravity environment. The thermal conductivity of molten InSb was 15.8 and 18.2 W·m−1·K−1 at 830 and 890 K, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00502405
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  • 5
    Digitale Medien
    Digitale Medien
    Thermophysical properties data on molten semiconductors (1992)
    Springer
    International journal of thermophysics 13 (1992), S. 1061-1084 
    Details
    ISSN: 1572-9567
    Schlagwort(e): density ; GaAs ; GaSb ; Ge ; high temperature ; InP ; InSb ; molten state ; semiconductors ; Si ; surface tension ; thermal conductivity ; viscosity
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract Thermophysical properties of molten semiconductors are reviewed. Published data for viscosity, thermal conductivity, surface tension, and other properties are presented. Several measurement methods often used for molten semiconductors are described. Recommended values of thermophysical properties are tabulated for Si, Ge, GaAs, InP, InSb, GaSb, and other compounds. This review shows that further measurements of thermophysical properties of GaAs and InP in the molten state are required. It is also indicated that a very limited amount of data on emissivity is available. Space experiments relating to thermophysical property measurements are described briefly.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01141216
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