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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2957-2963 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: At high temperatures and low oxygen partial pressures, decomposition of SiO2 can occur to form volatile SiO by the reaction Si+SiO2→2SiO. Since the Si atoms are supplied from the substrate, vacancies are generated at the SiO2/Si interface. This has been confirmed by observations of enhanced diffusion of Sb, retarded diffusion of P, and an accelerated shrinkage of extrinsic stacking faults in Si under thin SiO2 annealed in Ar at 1100 °C. As the oxide thickness increases, the vacancy supersaturation rapidly decreases, which is probably a result of a reduced SiO generation flux with increasing oxide thickness as the out-diffusion of SiO tends to control the rate of the overall decomposition process. When a polysilicon layer is on top of SiO2/Si, the SiO formation process occurs nonuniformly and circular features appear where the poly-Si layers have been completely removed. Vacancies were injected only through these circular features while the vacancy concentration in the rest of the region was not perturbed.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4914-4919 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of stress in silicon nitride films, deposited by the low-pressure chemical vapor deposition process, on the point defect concentrations in silicon has been studied. The stress level in the nitride film is varied by controlling the ratio of flow rates of reactant gases R=fSiH2Cl2/fNH3, from 1/6 to 6. The stress in the nitride film is tensile and its magnitude increases with decreasing R. During anneals at 1100 °C in Ar with a high stress in the nitride, phosphorus diffusion in silicon is retarded, antimony diffusion is enhanced, and extrinsic stacking faults shrink faster than with a low stress. These results suggest that a vacancy supersaturation and a self-interstitial undersaturation exist under the nitride and that the deviation from the equilibrium point defect concentrations are closely related to the stress level in the silicon nitride film. From the phosphorus junction profiles with varying shape width, an effective vacancy diffusivity of 3×10−10 cm2/s has been obtained.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 2075-2084 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Dipolar effects in solution nuclear magnetic resonance lead to additional peaks in two-dimensional experiments. These peaks, which have the experimental properties of intermolecular multiple-quantum coherences, have been used in a variety of applications. Most efforts have focused on intermolecular zero-quantum or double-quantum coherences, which originate in two-spin terms from the equilibrium density matrix. In this paper, we characterize the "third-order experiments" (Hahn echo decay and triple-quantum CRAZED, which both originate in the three-spin terms in the equilibrium density matrix) both theoretically and experimentally. For example, in the coupled-spin picture, Hahn echo decays in concentrated solutions arise initially from intermolecular, 3-spin, −1-quantum coherences, which are partially converted to 3-spin, +1-quantum coherences by the second pulse, and hence survive the 1:1 coherence transfer echo. Such terms require two dipolar couplings to become observable. We discuss the general properties of both of these sequences, and show that they only give information that is already present in the "second-order" double-quantum and zero-quantum experiments. Finally, we also show that relaxation and diffusion can be introduced into the coupled-spin picture in a straightforward manner. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 3800-3805 
    ISSN: 1089-7666
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The critical current, oscillation frequency, and characteristic wave number for the excitation of absolute instability in gyropeniotron amplifiers are calculated from the linear dispersion relation by following the Briggs–Bers criterion. Numerical results are presented for some cases of interest.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4745-4755 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The kinetics of silicon interstitial generation, recombination, and diffusion in floatzone (FZ) and Czochralski (CZ) silicon were studied during oxidation at 1100 °C using thin silicon membranes as test structures. One side of the membrane was oxidized to inject interstitials and the other side was covered with films of pad-oxide and silicon nitride. The interstitial concentration was monitored at both sides of the membrane simultaneously to determine the interface and transport kinetics of interstitials. The interstitial supersaturation at the oxidizing side was found to be insensitive to both the thickness variation and to the interface condition of the other side of the membrane. A model for this effect is proposed. At the interface opposite the oxidizing side, a delayed buildup of interstitials was observed. Using these results for FZ Si and assuming that there was no bulk recombination, an effective interstitial diffusivity of 9×10−10 cm2/s and an effective interface recombination rate of 3×10−7 cm/s for a silicon/pad-oxide interface were obtained. Interstitial transport across the CZ Si membranes during oxidation was slower than that across FZ membranes. The parameters extracted from these studies have been used to successfully model 2D dopant diffusion.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 115-117 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Literature values for the diffusivity of the silicon interstitial or interstitialcy, I, range over several orders of magnitude and have activation energies between 1 and 4 eV. We propose a model for bulk trapping effects on the I diffusivity which provides a consistent explanation for the observed discrepancies. It reconciles the effects of different materials (float-zone, Czochralski, and epitaxial silicon) and processes (diffusion and gettering) on the apparent value of the I diffusivity. New experimental results which directly indicate substantial bulk effects in different types of silicon support the validity of the model.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 34-36 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 514-516 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The efficiency of a gyrotron backward-wave oscillator (gyro-BWO) in the presence of a tapered axial guide magnetic field is calculated from a three-dimensional self-consistent theory. The saturation efficiency has a low value in the range 10–15% when the external magnetic field is uniform. However, the efficiency can be enhanced to over 30% by a small taper in the magnetic field. Numerical results are shown for operation in the TE11 mode of a cylindrical waveguide.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1593-1595 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of the presence of a thermally grown Si3N4 film on Sb diffusion in Si during annealing in Ar at 1100 °C has been investigated. Enhanced Sb diffusion under thermal nitride was observed and the enhancement effect disappeared when the nitride was removed before Ar annealing. These results strongly suggest that the enhanced Sb diffusion observed during thermal nitridation of Si is not directly related to the growth of thermal nitride. These effects are instead attributed to stresses in the thermal nitride film. Possible mechanisms of dopant diffusion affected by stresses in thin films are discussed.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 143 (2000), S. 0 
    ISSN: 1365-2133
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Materialart: Digitale Medien
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