Digitale Medien
s.l. ; Stafa-Zurich, Switzerland
Materials science forum
Vol. 584-586 (June 2008), p. 518-522
ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
In single crystal silicon (SCSi) MEMS devices, crystalline imperfection is recognized to favorfailure. A DRIE etched SCSi structure was built to study the crystal strain profile in dependence ofthe SCSi deformation by applying a mechanical force. High resolution X-ray diffraction methodssuch as the rocking curve method and reciprocal space mapping were used to determine the strain aswell as the defect concentration in the crystal. The investigations also include the numericalsimulation of deformations
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.584-586.518.pdf
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