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  • 1
    Digitale Medien
    Digitale Medien
    Reciprocity theorem for charge collection by a surface with finite collection velocity: Application to grain boundaries (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 959-966 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A proof is given of a reciprocity theorem which applies to charge collection by a semiconductor surface with finite collection velocity. The theorem leads to a boundary-value problem for the charge collection probability cursive-phi. This problem is solved by the eigenfunctions expansion method for the normal collector geometry, where the collecting surface corresponds to the edge of a nonideal junction or to a charge-collecting grain boundary. The solution thus obtained is equivalent to that found earlier by the method of images but has a much simpler form. This solution, its asymptotic approximations and low-order moments, as well as the boundary conditions for cursive-phi can find use in the determination of the surface collection/recombination velocity and minority-carrier diffusion length in a semiconductor from experimental induced current scans. The new expression for cursive-phi is used to calculate the collection efficiency profile of a charge-collecting grain boundary for a generation with finite lateral extent.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357774
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  • 2
    Digitale Medien
    Digitale Medien
    Electrostatic problem of a point charge in the presence of a semi-infinite semiconductor (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 684-690 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The space-charge region that is induced in a semiconductor half-space by an external point charge is analyzed. The mathematical model gives rise to a free-boundary problem, since the edge of the space-charge region [a surface z=z(d) in cylindrical coordinates] is unknown. From the formal solution of Poisson's equation, an integral equation for z(d) is derived and approximately solved. The solution describes the depletion region in dependence of the magnitude of the point charge, the charge-semiconductor distance, and the doping and dielectric constant of the semiconductor. Approximate expressions are derived for the force acting on the point charge and are used to estimate the electrostatic force between the tip and a silicon sample in a scanning force microscope. The limitations of the model are discussed and its generalization to the case of a semiconductor coated by a dielectric film is outlined. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360326
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  • 3
    Digitale Medien
    Digitale Medien
    Reconstruction of the charge collection probability in a solar cell from internal quantum efficiency measurements (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5687-5695 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A method is proposed to analyze the internal quantum efficiency spectra that are commonly obtained on solar cells by measuring their current response in monochromatic light as a function of wavelength. The efficiency values η are regarded as a function of the reciprocal y=1/α of the light absorption coefficient. The integral relation between η(y) and the charge collection probability distribution in the cell cursive-phi(z), with a simple change of variables, can be put in the form of a convolution. A transformed version of this convolution is approximately inverted to yield an explicit expression of cursive-phi(z) in terms of η(y) and its derivatives. The method is preliminarily tested on simulated data and is used to analyze published measurements obtained on a Si solar cell and a proton-irradiated InP solar cell. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1363677
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  • 4
    Digitale Medien
    Digitale Medien
    An alternative proof of the generalized reciprocity theorem for charge collection (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4524-4525 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An alternative proof is given of the generalized reciprocity theorem for charge collection discussed by Misiakos and Lindholm [J. Appl. Phys. 58, 4743 (1985)]. The present analysis directly yields an equation for the distribution of the charge collection probability in quasi-neutral regions of a semiconductor device and the associated boundary conditions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.343932
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  • 5
    Digitale Medien
    Digitale Medien
    Erratum: "Depth profiling of the minority-carrier diffusion length in intrinsically gettered silicon by electron-beam-induced current'' [J. Appl. Phys. 63, 1569 (1988)] (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3330-3330 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342528
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  • 6
    Digitale Medien
    Digitale Medien
    Depth profiling of the minority-carrier diffusion length in intrinsically gettered silicon by electron-beam-induced current (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1569-1579 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new electron-beam-induced current method is proposed for the depth profiling of nonuniform minority-carrier diffusion lengths in semiconductors. An induced current scan is obtained on a Schottky diode formed on the surface of a beveled sample and converted into a collection efficiency profile η(z). From this profile the depth distribution of the diffusion length L(z) is deduced using a direct reconstruction algorithm. To check consistency, a propagation-matrix based method is developed to calculate η(z) for arbitrary L(z). The model underlying these measurements, in its more general form, holds for an extended generation and includes the presence of the depletion layer. The proposed method is tried both on artificial data and experimental η(z) profiles obtained in intrinsically gettered silicon samples. The results show, in particular, that the trend of L(z) does not, in general, follow that of η(z). The connection between charge-collection efficiency and the diffusive component of the reverse current of a diode with nonuniform L(z) is also discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339942
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  • 7
    Digitale Medien
    Digitale Medien
    Comment on "A theory on the x-ray sensitivity of a silicon surface-barrier detector including a thermal charge-diffusion effect'' [J. Appl. Phys. 72, 3363 (1992)] (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1462-1462 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is shown that a recent analysis by Cho et al. [J. Appl. Phys. 72, 3363 (1992)] of surface-barrier detectors does not represent a new approach and is affected by gross errors, which lead to a wrong factor of 1/2 in the charge-collection probability and to the incorrect conclusion that one- and three-dimensional charge-diffusion models disagree.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354863
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  • 8
    Digitale Medien
    Digitale Medien
    Reconstruction of the charge collection probability in a semiconductor diode from collection efficiency measurements by the regularization method (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7287-7294 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new method is introduced to analyze the collection efficiency data that are obtained on a Schottky or p–n junction diode by irradiation with an electron beam with variable energy. The method aims at directly reconstructing the distribution φ(z) of the charge collection probability in the device, by inverting the integral transform that connects φ(z) to the measured collection efficiency profile. This inversion is generally an ill-posed problem, which, however, can be solved by the Tikhonov regularization method. This procedure is used to analyze published measurements obtained both on Si and GaAs diodes, and is shown to be particularly useful for characterizing nonideal devices.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347575
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  • 9
    Digitale Medien
    Digitale Medien
    Comment on "Determination of minority-carrier lifetime and surface recombination velocity by optical-beam-induced-current measurements at different light wavelengths'' [J. Appl. Phys. 66, 3060 (1989)] (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3023-3023 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is shown that a recent analysis by Flohr and Helbig [J. Appl. Phys. 66, 3060 (1989)] of beam-induced current has already appeared in the literature, and can be simplified by using the results of von Roos and Luke [J. Appl. Phys. 54, 3938 (1983)].
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346413
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  • 10
    Digitale Medien
    Digitale Medien
    Comment on "A contribution to the theory of beam-induced current characterization of dislocations'' [J. Appl. Phys. 69, 6387 (1991)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7657-7659 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pasemann [J. Appl. Phys. 69, 6387 (1991)] has recently compared exact and first-order calculations of the charge collection contrast of a straight dislocation perpendicular to the surface of a semiconductor, finding substantially different dependence on the beam energy at low beam energies. Here it is shown that Pasemann's result is only a consequence of having used finite values of the dislocation radius in the exact evaluations and zero in the approximate ones. For nonvanishing dislocation radius, the first-order approximation reproduces the exact contrast trend at any beam energy.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349680
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