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Enhanced Sb segregation in surfactant-mediated-heteroepitaxy: High-mobility, low-doped Ge on Si (1997)

Reinking, D. ; Kammler, M. ; Horn-von Hoegen, M. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 924-926

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Surfactant-mediated epitaxy (SME) allows the growth of smooth, continuous, relaxed, and principally defect free Ge films directly on Si(111); however, the very high surfactant doping level in the range of the solid solubility limit made them unacceptable for most device applications. By using high temperature SME we have reduced the Sb surfactant background doping level by more than three orders of magnitude. This is attributed to an enhanced surfactant segregation without kinetic limitations. The low Sb incorporation has been determined by an electrical characterization: An electron concentration of 1.1×1016 cm−3 and a very high electron Hall mobility of 3100 cm2/V s at 300 K (12 300 cm2/V s at 77 K) suggest an interesting potential of SME grown Ge films for future device applications. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.119690

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Digitale Medien

Electron transport in strained Si layers on Si1−xGex substrates (1993)

Vogelsang, Th. ; Hofmann, K. R.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 63 (1993), S. 186-188

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Results on the in-plane electron drift velocities and mobilities in strained Si layers grown on Si1−xGex substrates are reported for 300 and 77 K. High-field drift velocities are calculated by Monte Carlo simulations and low-field mobilities by numerical solution of Boltzmann's equation including intra- and intervalley phonon and impurity scattering mechanisms. Significant improvements of drift velocities relative to bulk Si are found for electric fields up to several 10 kV/cm, while saturation occurs at the bulk values for both temperatures. A much stronger mobility enhancement of 74% is obtained at 300 K compared to 36% at 77 K, which is consistent with recent experimental results.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.110394

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Characterization of SiGe quantum-well p-channel MOSFETs (1995)

Weidner, J.-O. ; Hofmann, K. R. ; Hofmann, F. ; [weitere]

Springer

Journal of materials science 6 (1995), S. 325-329

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ISSN: 1573-482X

Quelle: Springer Online Journal Archives 1860-2000

Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Maschinenbau

Notizen: Ge0.2Si0.8 Quantum Well p-MOSFETs with very thin gate oxides of 5 nm, 2.5 nm cap-layer and an optional Boron doped delta layer fabricated in a standard 0.6 Μm CMOS process have been analysed by C-V and I-V measurements at different temperatures. The maximum low field hole mobility calculated from drain conductance was increased by 70%; from 67 cm2/Vs for a reference Silicon epi transistor to 115 cm2/Vs at 300 K and by 100%; from 110 cm2/Vs to 220 cm2/Vs at 98 K. These values were obtained at relatively high doping concentrations in the channel, the mobile channel charge was directly obtained from high and low frequency C-V curves. The influence of the net doping density in the channel region on the device characteristics is demonstrated. In the high electric field region the drain current in the saturation region was improved by 20%; for the same threshold voltage.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00125887

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