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  • 1
    Digitale Medien
    Digitale Medien
    Generation and dissociation of complexes of iron and phosphorus atoms in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3077-3082 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: To examine the possibility of generating complexes of iron and phosphorus atoms in silicon, neutral interstitial iron in phosphorus doped silicon crystals with various concentrations were measured with the electron spin resonance (ESR) method after cooling from high temperature at various cooling rates. This concentration was found to depend on the cooling rate when the concentration of phosphorus was high: The concentration of interstitial iron was low only when the concentration of phosphorus was high and the cooling rate was slow. This result shows that some iron atoms form complexes with phosphorus atoms during cooling and become ESR-inactive. Annealing behaviors of these complexes monitored as to the concentration of neutral interstitial iron are described as a combination of two processes, namely, the release of iron atoms from iron-phosphorus complexes and the diffusion of iron to quenched-in defects which are concluded to exist based on the dependence of annealing behavior on the cooling rate. From the analysis of annealing behaviors, the binding energy between iron and phosphorus atoms and the activation energy of diffusion of iron were determined to be 0.90 and 0.80 eV, respectively. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360059
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  • 2
    Digitale Medien
    Digitale Medien
    Optical excitation and thermal recovery of the 78 meV/203 meV acceptors in GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 932-941 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optical excitation spectra and thermal recovery after excitation of the 78 meV/203 meV acceptors in heat-treated GaAs doped with boron (B) and aluminum were determined by measurements of optical absorption of 78 and 203 meV acceptor states and of optical absorption due to localized vibration of antisite B. Antisite B was generated due to annealing of B-doped GaAs at high temperatures. The 203 meV band in the specimen annealed at 1200 °C was found to have two threshold energies, i.e., 0.76 and 1.14 eV. The 78 and 203 meV bands in the specimen annealed at 600 °C were found to have three threshold energies, i.e., 0.52, 0.80, and 1.08 eV. The magnitude of these energy levels was interpreted to be above the top of valence band. Defects responsible for these energy levels were generated due to annealing of specimens. Thermal recovery of optically excited defects was also investigated. Both acceptor states were found to recover between 50 and 150 K, and the 203 meV acceptor state was found to recover between 150 and 220 K in GaAs annealed at 1200 °C. Both acceptor states recovered between 30 and 100 K in GaAs annealed at 600 °C. Activation energies of recovery stages of 150–220 K in a specimen annealed at 1200 °C and 30–100 K in a specimen annealed at 600 °C were determined to be 0.58 eV and 46 meV, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357771
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  • 3
    Digitale Medien
    Digitale Medien
    Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1848-1853 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We determined the formation energy of self-interstitials in carbon (C)-doped Si from measurements of optical absorption due to hydrogen (H) bound to isolated self-interstitials. Specimens of C-doped Si were sealed in quartz capsules together with hydrogen (H) gas, with pressure being 1 atm at high temperature, and were annealed at high temperature for 1 h followed by quenching in water. We measured their optical absorption spectra at about 7 K with an FT-IR spectrometer. Several peaks coincided with those observed in proton-implanted Si. Hence, we conclude that complexes of simple point defects such as vacancies and self-interstitials with hydrogen atoms existed in those specimens. From the quenching temperature dependence of the peaks identified to be H bound to self-interstitials, the formation energy of self-interstitials in C-doped Si was estimated to be about 3 eV. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370978
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  • 4
    Digitale Medien
    Digitale Medien
    Formation and annihilation of H-point defect complexes in quenched Si doped with C (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4525-4530 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We investigated the formation and annihilation of H-point defect complexes formed in C-doped Si by heating at high temperatures followed by quenching in hydrogen gas. Specimens of C-doped Si were sealed in quartz capsules together with hydrogen (H) gas, at pressure 0.8–1.5 atm at high temperature, and were heated at high temperature for 1 h followed by quenching in water. We measured their optical absorption spectra at about 7 K with an Fourier transform infrared spectrometer. We observed several optical absorption peaks due to H-point defect complexes. The optical absorption peaks observed at 2192 and 2203 cm−1 were assigned to the Si–H stretching mode of three hydrogen atoms bound to a vacancy (VH3 defect). The formation of the VH4 defect is due to the reaction between H and the VH3 defect. From isothermal annealing experiments, the activation energy for the dissociation of the VH4 defect was determined to be about 2.5 eV. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1312841
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  • 5
    Digitale Medien
    Digitale Medien
    Thermal properties of H-related complexes in electron-irradiated Si doped with H (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4865-4870 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thermal properties, namely, the thermal stability and the activation energy, of H-point defect complexes in Si were investigated. Specimens were doped with H by annealing in H2 gas followed by quenching. Then, they were irradiated by 3 MV electrons at room temperature. Subsequently, they were annealed isochronally or isothermally. Optical absorption spectra of H-point defect complexes were measured at 7 K. Due to isochronal annealing, the 2122, 1838, and 817 cm−1 peaks disappeared below 200 °C. On the other hand, 2223 and 2166 cm−1 peaks formed at above 125 and 175 °C, respectively. From isothermal annealing experiments, the binding energies of H2* (1838 cm−1 peak) and I (I: a self-interstitial) H2 or V (V: a vacancy) H2 (1987 and 1990 cm−1 peaks) were determined to be about 1.5 and 2.0 eV, respectively. The generation of the 2223 cm−1 peak was due to reaction between H2 and the 2122 cm−1 defect. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.371521
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  • 6
    Digitale Medien
    Digitale Medien
    Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8361-8367 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optical absorption spectra and the annealing behavior of hydrogen (H)-point defect complexes in carbon (C)-doped Si after hydrogenation were investigated. Specimens of C-doped Si (C concentration: 1.7×1017 cm−3) were sealed in quartz capsules together with H2 gas and were annealed at a high temperature for 1 h followed by quenching in water. We measured the optical absorption spectra at about 7 K with a Fourier-transform infrared spectrometer. The VH4 (V: monovacancy) defect was almost annealed out at 600 °C. The formation energy of the VH4 defect in C-doped Si was estimated to be about 3.2 eV from the quenching temperature dependence of the 2223 cm−1 peak. The observed 2192 and 2203 cm−1 peaks are probably due to the VH3 defect, which captures one H atom during annealing and become the VH4 defect. After annealing at 700 °C, we observed two absorption peaks at 2093 and 2086 cm−1, which are probably due to Si–H stretching vibration of H on internal surfaces of voids. From these assignments, it was found that V is introduced into C-doped Si at high temperatures, although it is known that C introduces I into Si at high temperatures. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.373548
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  • 7
    Digitale Medien
    Digitale Medien
    New optical absorption lines in heat-treated gallium arsenide (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 992-994 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: New optical absorption lines were found in GaAs doped with B or Al subjected to some thermal treatment. They were grouped into three bands termed L, M, and H on the basis of the energy ranges in which they are observed; 70.8 and 72.7 meV for the L band, 172.3 , 181.0, and 186.3 meV for the M band, and 208.7, 217.4, and 222.5 meV for the H band at 6 K. All of these lines originate in electronic transitions. The L band is related to complexes containing the Al impurity while the M and H bands to complexes containing the B impurity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353315
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  • 8
    Digitale Medien
    Digitale Medien
    Optical absorption study of Si grown in a hydrogen ambient (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1958-1961 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We studied optical absorption spectra of Si crystals grown in a hydrogen ambient. Specimens were grown by the floating-zone growth method in a hydrogen ambient of 1 atm. Optical absorption spectra of those specimens were measured at 6 K. Many optical absorption lines were observed in the range of 1900–2200 cm−1. They were observed only when the concentrations of carbon or boron were high. To understand these results, we referred to a report according to which a so-called A-type swirl, an interstitial-type dislocation loop, was observed when impurities of smaller covalent radii than that of Si were doped. Hence, we concluded that the above optical absorption lines were due to localized vibration of hydrogen atoms bound to interstitial Si atoms. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366921
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  • 9
    Digitale Medien
    Digitale Medien
    On temperature dependence of the optically active behavior of an infrared active defect in silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1945-1947 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optically active behaviors of the infrared active defect, so-called higher order bands, have been investigated at different temperatures in fast neutron irradiated silicon. It is found that the optically active decay follows logarithmic time dependence with a decay time of about 105 s, which is nearly temperature independent below 80 K. The residual absorption remains up to heating temperatures of 180 K. The experimental findings are discussed in terms of the relaxation characteristic of photoexcited carriers governed by neutron irradiation induced defect clusters. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113285
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  • 10
    Digitale Medien
    Digitale Medien
    Deformation-Induced Vacancy Clusters in InP Studied by Positron Annihilation (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 105-110 (Jan. 1992), p. 1061-1064 
    Details
    ISSN: 1662-9752
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Maschinenbau
    Materialart: Digitale Medien
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/59/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.105-110.1061.pdf
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