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  • 11
    Electronic Resource
    Electronic Resource
    Sequential deposition growth of Bi-Sr-Ca-Cu-O systems observed using in situ reflection high-energy electron diffraction (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 654-655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal growth mechanism in Bi-Sr-Ca-Cu-O thin films has been revealed by sequential deposition with an electron cyclotron resonance (ECR) oxygen plasma using in situ reflection high-energy electron diffraction (RHEED) observation. A series of RHEED patterns presents clear evidence that the unit cell of the Bi-Sr-Ca-Cu-O structure is completed as the Bi layers have sandwiched Sr, Ca, and Cu layers. This crystalline process is not an atomic layer by atomic layer growth but a "unit cell by unit cell'' growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104559
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  • 12
    Electronic Resource
    Electronic Resource
    Superconductivity and crystallinity of Ba2Y1Cu3O7−δ thin films prepared by pulsed laser deposition with substrate bias voltage (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6331-6335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrate bias voltages were found to be significantly effective in preparing high-quality laser-deposited superconducting Ba2Y1Cu3O7−δ films at reduced substrate temperatures. The zero-resistance temperature of the biased films, positive bias being more effective than negative, decreased very slightly when the substrate temperature was lowered, whereas that of the unbiased films decreased considerably. In addition, the surface morphology and c-axis orientation have been improved by applying substrate bias voltages. Bias voltages within ±500 V hardly affect the composition of the resulting films so that stoichiometric films have been obtained from a stoichiometric target. A time-resolved optical observation revealed that a short time emission, probably being oxygen plasma, occurred in a few μs after the laser pulse impingement. The improvement in crystallinity of the resulting films is attributed to this emission. The velocity of emissive species in the plume was determined to be 6×105 cm/s. Under positive-biased conditions slower components with a velocity of 3×105 cm/s or less were also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346877
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  • 13
    Electronic Resource
    Electronic Resource
    Scanning probe microscopy of NdBa2Cu3Ox thin film surfaces (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2155-2157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that NdBa2Cu3Ox (NBCO) thin films, fabricated by the laser ablation process, have highly stable and smooth surfaces. Clear spiral patterns with 4–5 terraces are observed all over the film area with an atomic force microscope (AFM) operating in air. We have also obtained atomically resolved image of the spiral terraces using AFM, and also using ultrahigh vacuum scanning tunneling microscope. This study suggests that NBCO film is a good candidate for device applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114751
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  • 14
    Electronic Resource
    Electronic Resource
    Spatial uniformity of negative ion production in volume negative ion source : Papers from the Ninth International Conference on Ion Sources (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1064-1066 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A spatial uniformity of negative ion production has been studied experimentally in a tandem-type volume negative ion source, where the plasma is divided into two regions by a magnetic filter, i.e., a driver region and an extraction region near the plasma grid (PG). A plasma density profile and the negative ion beam profile were measured. By the Langmuir probe measurement, a strong nonuniformity of the plasma density was observed near the plasma grid when the plasma grid is biased electrically with respect to the anode. By changing the polarity of the bias voltage, the deviation of the plasma density profile changed to the direction of E×B. In the pure hydrogen operation, the extracted beam profile corresponded to the plasma density profile in the extraction region. In the Cs-seeded operation, on the other hand, the uniformity of the beam current density became uniform despite the nonuniformity of the plasma density profile in the extraction region. The uniformity of the negative ions corresponded to the plasma uniformity in the driver region. These results indicate that the negative ions are not produced by positive ions in the extraction region in the Cs-seeded operation. We conclude that the negative ions are produced mainly by neutral atoms produced in the driver region via the surface production on the PG. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430527
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  • 15
    Electronic Resource
    Electronic Resource
    Hydrogen negative ion beam acceleration in a multiaperture five-stage electrostatic accelerator : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1231-1233 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: To develop a high power negative ion source/accelerator for 1 MeV class neutral beam injector, hydrogen negative ion beam acceleration has been studied using a five-stage, multiaperture electrostatic accelerator. After conditioning each accelerator stage, the negative ions are accelerated to 1 MeV successfully with a drain current of 25 mA for 1 s. Cs was introduced into the ion source to produce higher current density. The highenst acceleration current density of 15 mA/cm2 was successfully accelerated up to an energy of 700 keV for 1 s, keeping the optimum perveance. The total acceleration current of 200 mA was extracted from nine central apertures 14 mm diameter each. A preliminary measurement of the heat load in the accelerator showed that the direct interception of the beam for the first grid and the third grid was negligibly small. The highest heat load was 4.5% of the input power at the second grid. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150434
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  • 16
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of negative ion production in the negative hydrogen ion source : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 883-886 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Two Monte Carlo simulation codes: (a) neutral transport code and (b) negative ion (H−) transport code, have been developed to understand transport phenomena in negative ion sources. In the neutral transport code, Boltzmann equations for hydrogen molecules (H2) and atoms (H) are solved. Three dimensional (3D) spatial distributions of H2, H, and H− production are obtained for a tandem negative ion source. The volume production of H− is limited to the area around the gas inlet in the first chamber and near the plasma grid in the second chamber. On the other hand, distribution of H− surface production is shown to be almost uniform over all the plasma grid surface. In the negative ion code, H− trajectories are calculated by numerically solving the 3D equation of motion for H− ions. The effects of the magnetic filter on the extraction probability of surface produced H− ions are mainly studied. The dependence of the extraction probability on the field strength is small. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150321
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  • 17
    Electronic Resource
    Electronic Resource
    Thermal stability of YBa2Cu3O7−x single crystal surfaces investigated by the ion channeling technique (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 841-843 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed ion channeling characterizations on the (001) and (100) surfaces of YBa2Cu3O7−x single crystals, using 950 keV He+ ions at temperatures ranging from 20 to 780 °C. In oxygen pressures below 5×10−5 Torr, we directly observed the surface changes as the sample temperature was increased, and found that the compositional and structural changes occurred from around 400 °C. At higher oxygen pressures, we heated the crystals and performed channeling analysis before and after the heating. We found that the YBa2Cu3O7−x crystal surfaces were stable at temperatures up to 780 °C in the oxygen pressure range of 1 mTorr–1 Torr. Beyond this range, the surfaces deteriorated at high temperatures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119663
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  • 18
    Electronic Resource
    Electronic Resource
    Growth of c-axis in-plane YBa2Cu4O8 thin films through in situ annealing of precursors deposited by hybrid plasma sputtering (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Processing for the growth of YBa2Cu4O8 (Y124) thin films has been investigated by dc 94.92 MHz hybrid plasma sputtering with in situ annealing. The amorphous precursor is found to be the best candidate for growing pure Y124 phase through in situ annealing. The Raman spectrum confirms the Y124 phase by presenting the modes at 250 and 604 cm−1 related to the double Cu-O chains. X-ray diffraction as well as transmission electron microscopy further show that the films are composed of grain with orthogonal c axes in the film plane. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112493
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  • 19
    Electronic Resource
    Electronic Resource
    Synthesis of CuO films using mass-separated, low-energy O+ ion beams (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2684-2685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, CuO thin films have been synthesized by means of low-energy and high-density O+-ion beams, mass separated from an oxygen plasma. A 50-eV, 47-μA/cm2 O+-ion beam has successfully produced CuO at a growth rate of 0.04 A(ring)/s by simultaneous deposition of Cu metal on MgO(100). O+ beams have greater potential for oxidation than O2 gas from the viewpoint of the flux necessary to form CuO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106895
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  • 20
    Electronic Resource
    Electronic Resource
    High temperature surface peaks and surface reconstruction of the (001) SrTiO3−δ substrate surfaces studied by channeling (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 317-319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the surface peaks of the (001) SrTiO3 substrate surfaces was studied for the sample temperature up to 750 °C by channeling. The temperature dependence of the Sr surface peaks was found to be due to the thermal vibration of the Sr atoms. However, an anomalous temperature dependence of the Ti surface peak was observed which may be due to the displacement of Ti surface atoms. The Ti surface peaks are maximum at 400 °C. For the reduced SrTiO3−δ, surface reconstruction was observed on the Sr surface sublattice but the anomalous temperature dependence of the Ti surface peak disappeared. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113530
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