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  • Electronic Resource  (78)
  • 1990-1994  (78)
  • 11
    Electronic Resource
    Electronic Resource
    Phototransmission study of strained-layer InxGa1−x As/GaAs single quantum well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5388-5390 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the phototransmission measurement of strained-layer InxGa1−x As/GaAs single quantum well structures at room temperature. The spectra obtained show distinct features of excitons in the single quantum wells. Fitting of the phototransmission spectrum indicates that the excitonic transition energy modulation is the main mechanism. The phototransmission can be used as a supplement to photoreflectance due to its sensitivity and convenience.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347019
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  • 12
    Electronic Resource
    Electronic Resource
    Generation of metal–carbon and metal–nitrogen clusters with a laser induced plasma technique (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5243-5245 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: During the course of investigating dehydrogenation reactions induced by transition metals, we find that using a carrier gas containing hydrocarbons and ammonia instead of pure helium, in conjunction with a laser vaporization device, enables the facile production of metal–carbon and metal–nitrogen clusters in both the neutral and ionic forms. With only a change in the nature of the carrier gas, a variety of new classes of clusters can be produced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463823
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  • 13
    Electronic Resource
    Electronic Resource
    Growth of titanium nitride: From clusters to microcrystals (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 231-235 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time-of-flight mass spectrometry is used to investigate (TiN)n+ clusters produced by a laser-induced plasma reactor source. The mass spectral abundance patterns indicate that the clusters have cubic structures resembling subunits of the fcc lattice of solid TiN. The primary stoichiometries observed are (TiN)n+ (n=1–126), except for TinNn−1+ (n=14, 63). The most stable structures of the clusters are cuboids, in some cases containing a completed terrace. Even at the very early stages of crystal growth, the gas-phase clusters prefer a cubic crystalline atomic arrangement with a highly symmetric structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464669
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  • 14
    Electronic Resource
    Electronic Resource
    Photodissociation of Kr+n clusters (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 3215-3223 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation of Kr+n (3≤n≤11) cluster ions is observed for the first time in the 565 to 630 nm wavelength range. Kr+3 has a photodissociation cross section of (8.1±0.8)×10−17 cm2 at 612 nm, while Kr+4 and Kr+5 are found to have larger photodissociation cross sections than Kr+3 with a slightly red-shifted spectrum. Only Kr+ is detected as a photofragment of Kr+3, while in the Kr+n (4≤n≤7) experiments, both Kr+2 and Kr+ photofragments are seen. As size n increases from 7 to 11, Kr+ disappears and Kr+3 appears. Laser power studies show that all are single photon photodissociation processes. For higher order Kr+n clusters (4≤n≤7) the intensity ratio between the two photodissociation products Kr+2 and Kr+ is dependent on the wavelength of the laser light used in the photodissociation, but independent of the polarization direction of the laser. Translational energy analysis of the photofragments is used to investigate the photodissociation mechanisms. In contrast to the photodissociation of Kr+3, where two types of Kr+ photofragments with different values of translational energy release are observed, only one type of Kr+2 photofragment, with zero kinetic energy release is found in the Kr+4 photodissociation. These findings are discussed in terms of the dynamics of photodissociation and possible structures of these cluster ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458854
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  • 15
    Electronic Resource
    Electronic Resource
    The metamorphic signature of contemporaneous extension and shortening in the central Himalayan orogen: data from the Nyalam transect, southern Tibet (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of metamorphic geology 11 (1993), S. 0 
    Details
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Abstract Geological relationships and geochronological data suggest that in Miocene time the metamorphic core of the central Himalayan orogen was a wedge-shaped body bounded below by the N-dipping Main Central thrust system and above the N-dipping South Tibetan detachment system. We infer that synchronous movement on these fault systems expelled the metamorphic core southward toward the Indian foreland, thereby moderating the extreme topographic gradient at the southern margin of the Tibetan Plateau. Reaction textures, thermobarometric data and thermodynamic modelling of pelitic schists and gneisses from the Nyalam transect in southern Tibet (28°N, 86°E) imply that gravitational collapse of the orogen produced a complex thermal structure in the metamorphic core. Amphibolite facies metamorphism and anatexis at temperatures of 950 K and depths of at least 30 km accompanied the early stages of displacement on the Main Central thrust system. Our findings suggest that the late metamorphic history of these rocks was characterized by high-T decompression associated with roughly 15 km of unroofing by movement on the South Tibetan detachment system. In the middle of the metamorphic core, roughly 7–8 km below the basal detachment of the South Tibetan system, the decompression was essentially isothermal. Near the base of the metamorphic core, roughly 4–6 km above the Main Central thrust, the decompression was accompanied by about 150 K of cooling. We attribute the disparity between the P–T paths of these two structural levels to cooling of the lower part of the metamorphic core as a consequence of continued (and probably accelerated) underthrusting of cooler rocks in the footwall of the Main Central thrust at the same time as movement on the South Tibetan detachment system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1525-1314.1993.tb00183.x
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  • 16
    Electronic Resource
    Electronic Resource
    Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2–Si interface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2048-2054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effective surface recombination velocity (Seff) at plasma enhanced chemical vapor deposited (PECVD) SiO2/Si interface as a function of surface band bending under illumination was obtained by combining the photoconductive voltage decay measurements with indium tin oxide gate bias voltage, metal-oxide-semiconductor-capacitance voltage, measurements and theoretical calculations. The capture cross sections for electrons and holes are obtained for the first time for the PECVD SiO2/Si interface state. Theoretical calculations of Seff based on the interface parameters, including interface state density and cross sections for electron and hole, were performed to see the effects of the positive oxide charge density (Qox) on Seff. It is found that roughly a 10 times larger value of Qox compared to the midgap interface state density is required to reduce Seff below 10 cm/s for 5 Ω cm (100) p-type Si. These results prove the potential of PECVD SiO2 for effective passivation of Si surfaces for devices like solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356307
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  • 17
    Electronic Resource
    Electronic Resource
    Measurements of intrinsic magnetic properties of materials from surface inspection (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5922-5922 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface inspection of magnetic properties with a sensor is a useful and practical technique because it gives a rapid and noninvasive measurement and requires minimum material preparation. However, this technique is handicapped by the practical problems of calculating inherent magnetic properties of the material from such a measurement. A transfer function based on the first approximation was developed previously and it worked well when the dimension of the sample was comparable with the inspection head. However, the nonuniform distribution of the magnetic field is an inherent problem and gets more serious when the vertical and lateral dimensions of the test material become comparable with the pole length of inspection head. Therefore, it invalidates the application of first approximation. A more general and practical transfer function is derived in this paper, including the geometry effects of inspection head and test material. This transfer function is based on the surface magnetic charge model and fits well in the situation when the test material has a large dimension. Test results on specimens by direct measurement and measurement from surface inspection will be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355513
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  • 18
    Electronic Resource
    Electronic Resource
    Microstructure and properties of YBa2Cu3O7−δ thin films with BaO precipitates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 234-236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaO precipitates with sizes between 10–100 nm in laser ablated YBa2Cu3O7−δ (YBCO) thin films on Y-stabilized Zirconia substrates have been identified by x-ray diffraction and transmission electron microscopy. The precipitates exhibit equiaxed shapes and grow epitaxially inside and on the surface of the YBCO films, with (001)BaO plane parallel to the a,b plane of YBCO. Some of these smaller precipitates and BaO/YBCO boundaries probably provide potential pinning sites for magnetic flux lines, which might contribute to the observed increase of critical current density with magnetic field B under B≤500 G in the case of B perpendicular to the c axis of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112639
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  • 19
    Electronic Resource
    Electronic Resource
    Record low SiO2/Si interface state density for low temperature oxides prepared by direct plasma-enhanced chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2117-2119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new process has been developed to achieve a very low SiO2/Si interface state density for low temperature deposited oxides on silicon substrates. The technique involves direct plasma-enhanced chemical vapor deposition (PECVD), with appropriate growth conditions, followed by a photo-assisted anneal. Approximately 500-A(ring)-thick SiO2 layers, deposited on Si by PECVD at 250 °C with 0.02 W/cm−2 rf power, then covered with an evaporated thin aluminum layer, and finally subjected to a photo-assisted anneal in forming gas ambient at 350 °C, resulted in interface state density, (Dit), in the range of 1–4×1010 cm−2 eV−1 near midgap of silicon. The best Dit value achieved in this study was 1.1×1010 cm−2 eV−1, which sets a new record for the lowest Dit for the PECVD oxides fabricated to date. Detailed analysis showed that the PECVD deposition conditions, photo-assisted anneal, forming gas ambient, and the presence of an aluminum layer on top of the oxides during the anneal, all contributed to this extremely low value of Dit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110558
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  • 20
    Electronic Resource
    Electronic Resource
    Influence of phase separation on electron mobility in high-purity GaxIn1−xAsyP1−y (0≤y≤1) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 211-213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A strong contribution of the phase separation to the alloy scattering potential is determined for the first time in the composition range from y=0.4 to y=1.0 in high-purity GaxIn1−xAsyP1−y alloys. The composition fluctuation leads to a sharp increase in the alloy scattering potential at y=0.7, in perfect agreement with yet unexplained experimental electron mobility determinations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110372
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