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  • 11
    Electronic Resource
    Electronic Resource
    Density-of-states effective mass and scattering parameter measurements by transport phenomena in thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 462-466 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel machine has been developed to measure transport coefficients in the temperature range of 50–350 K of thin films deposited on electrically insulating substrates. The measured coefficients—resistivity, Hall, Seebeck, and Nernst—are applied to solutions of the Boltzmann transport equation to give information about the film's density-of-states effective mass, the Fermi energy level, and an energy-dependent scattering parameter. The machine is designed to eliminate or compensate for simultaneously occurring transport phenomena that would interfere with the desired measured quantity, while allowing for all four coefficients to be measured on the same sample. An average density-of-states effective mass value of 0.29±0.04me was measured on the transparent conductive oxide, cadmium stannate (CTO), over a carrier concentration range of 2–7×1020 cm−3. This effective mass value matched previous results obtained by optical and thermoelectric modeling. The measured scattering parameter indicates that neutral impurities or a mixture of scattering mechanisms may inhibit the transport of carriers in CTO. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150224
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  • 12
    Electronic Resource
    Electronic Resource
    Structural characterization of zinc stannate thin films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1464-1471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline thin films of Zn2SnO4 were deposited by rf magnetron sputtering onto glass substrates. Films were characterized by θ–2θ x-ray diffraction and by 119Sn conversion electron Mössbauer spectroscopy. The films were randomly oriented in a cubic spinel structure. Comparison of x-ray diffraction peak intensities with structure-factor-calculated peak intensities confirmed that the films were in an inverse spinel configuration. Mössbauer studies detected two distinct Sn4+ octahedral sites. These distinct sites may be induced by distortions in the lattice associated with equally distinct Zn2+ octahedral sites. A model is suggested to explain that the relatively low electron mobility of Zn2SnO4 may be associated with disorder on the cation octahedral sites. This may disrupt transport between edge-sharing d10s0 electronically configured cations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429793
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  • 13
    Electronic Resource
    Electronic Resource
    Thermoelectric properties of pure and doped FeMSb (M=V,Nb) (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 317-321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoelectric properties of the pure and doped half-Heusler compounds FeVSb and FeNbSb are reported. The electrical resistivities are between 0.2 and 20 mΩ cm at room temperature. Thermoelectric power measurements indicate that FeVSb is an n-type material with moderate Seebeck coefficients near −70 μV/K at 300 K. The thermal conductivity at room temperature is large, approximately 0.1 W/cm K, and increases with decreasing temperature. Chemical substitutions, which have a dramatic effect on the transport properties, were performed in an effort to enhance the thermoelectric performance. Band-structure calculations are presented for the pure materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371863
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  • 14
    Electronic Resource
    Electronic Resource
    Measurements of hydrogen in metal-oxide-semiconductor structures using nuclear reaction profiling (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2291-2298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report depth profiles of the hydrogen concentrations in metal-oxide-semiconductor structures measured using the nuclear reaction profiling technique with a 6.4-MeV 15N beam. In both conventionally grown and ultra-dry thermal oxide samples with aluminum or gold gate metal, a peak of hydrogen concentration is observed at the metal/SiO2 interface. The amount of hydrogen at this interface varied from sample to sample in the range 2–6×1015 H/cm2, which was at least 20 times as much as in the SiO2 layers. By continued irradiation with the measuring beam, most of this hydrogen was detrapped from the metal/SiO2 interface and diffused into the SiO2. The detrapping occurred much more rapidly in samples made with Al metallization than in Au gate or unmetallized samples. The data can be fitted by a model in which hydrogen is detrapped from the metal/SiO2 interface by the beam, then diffuses into the SiO2. Redistribution of hydrogen was found to continue until it was uniformly distributed throughout the SiO2, with a residual peak of strongly trapped hydrogen remaining at the metal/SiO2 boundary. At the same time the concentration of hydrogen in the SiO2 increased from an initial low level to about 4×1020 cm−3, depending on the amount of hydrogen initially at the Al/SiO2 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341043
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  • 15
    Electronic Resource
    Electronic Resource
    Hole trapping in SiO2 films annealed in low-pressure oxygen atmosphere (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 925-930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of hole traps in thermal SiO2 films on Si(100) has been characterized as a function of O2 partial pressure in the annealing ambient in order to address the chemistry associated with the hole traps. The annealing treatments were carried out in ultrahigh vacuum (base pressure∼5×10−9 Torr) without and with the presence of an intentional (controlled) partial pressure of O2 in the range 10−6–5×10−2 Torr. Hole trapping was characterized using the avalanche injection technique. Annealing in vacuum results in an increased hole trapping rate similar to that observed for high-temperature (T〉900 °C) furnace annealing in N2. The hole trapping is reduced upon annealing in O2 containing ambients if the O2 partial pressure exceeds the SiO vapor pressure by at least one order of magnitude. Thus, the presence of sufficient O2 in the postoxidation annealing process suppresses hole trapping. These results appear analogous to the reduction in low-field breakdown when O2 is present, as recently reported. In both cases, it is likely that the O2 serves to reoxidize a defect related SiO product which is generated by Si-SiO2 reaction at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339702
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  • 16
    Electronic Resource
    Electronic Resource
    Role of oxygen in defect-related breakdown in thin SiO2 films on Si (100) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4584-4588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of annealing in vacuum and in controlled low-pressure oxygen ambient on breakdown characteristics of thin (∼500 A(ring)) SiO2 films on Si (100) has been studied under ultrahigh vacuum conditions for temperatures 750–900 °C and controlled O2 partial pressures in the range 10−6–5×10−2 Torr. Dark current-voltage measurements on Al-gate capacitors show that vacuum annealing causes low-field self-healing breakdown by the formation of local defects in the oxide. This degradation of breakdown characteristics is suppressed by the presence of sufficient O2 in the annealing ambient, such that the O2 partial pressure must exceed the SiO equilibrium partial pressure by a factor of ∼100×. This behavior suggests that low-field breakdown is a consequence of oxide decomposition (Si+SiO2→2SiO↑) at defects in the oxide, which is suppressed by reoxidation of the volatile SiO reaction product.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338365
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  • 17
    Electronic Resource
    Electronic Resource
    Optical and electronic properties of the electron beam resist poly(butene-1-sulfone) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4360-4364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of thin films of poly(butene-1-sulfone), PBS, an electron beam resist, are presented for the range of photon energies from 2.5 to 39.0 eV. The density of these films is found to be (1.39 ± 0.02) g cm−3. A sum-rule calculation is used to demonstrate the overall consistency of the data obtained. The optical data are used to calculate inelastic electron mean-free paths in PBS as a function of incident electron energy from 100 to 10 000 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335525
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  • 18
    Electronic Resource
    Electronic Resource
    Effects of hypophosphite contents and surface treatment on electroplated Co-Ni-P thin films : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5575-5577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes the effects of sodium hypophosphite (hypo) content in cobalt nickel sulfate bath, and the duration of surface treatment prior to electroplating, on the magnetic, structural, and electrical properties of Co-Ni-P thin films. The coercivity of the Co-Ni-P layer can be controlled independently either by hypo content or by surface treatment. Transmission electron microscopy microstructure indicates that the width of grain boundaries of Co-Ni-P films is influenced by hypo in the magnetic bath. The mechanism of the coercivity increase by hypo in the bath is thought to result from magnetostatic or exchange decoupling at phosphorus-rich grain boundaries. Effects of these factors on media noise can be well-explained by the microstructural change of Co-Ni-P layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353655
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  • 19
    Electronic Resource
    Electronic Resource
    Perhaloalkyl hypochlorites. V. Perfluoroalkyl borate esters from reactions with boron trichloride (1971)
    s.l. : American Chemical Society
    Inorganic chemistry 10 (1971), S. 2810-2812 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50106a041
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  • 20
    Electronic Resource
    Electronic Resource
    The argon melting curve to very high pressures (1986)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 1034-1036 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The melting curve of Ar has been measured to 717 K and 60 kbar using a new interferometric technique in a diamond anvil cell. Theoretical calculations are in excellent agreement with the measurements
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451295
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