ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, wereinvestigated on 3C-SiC epilayers exhibiting different nitrogen doping levels. The epilayers weregrown on (100) silicon. Doping level (N) and eventual dopant contamination (Al) were analyzed byC-V and/or SIMS. The specific contact resistance was determined by using Transmission LineModel (TLM) patterns for each condition (doping and annealing). Our results clearly evidence thatvery low specific contact resistance (~10-51.cm²) is obtained on highly doped 3C-SiC epilayers,enlightening the interest of both material and Ni contacts for future devices fabrication
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.721.pdf
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