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  • 11
    Electronic Resource
    Electronic Resource
    Springer
    Acta neuropathologica 83 (1992), S. 308-314 
    ISSN: 1432-0533
    Keywords: Large T-antigen ; Transgenic mice ; Pineal cell tumors ; Pineal organ ; Primitive neuroectodermal tumors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Adult transgenic mice expressing the large T-antigen of the Simian virus 40 (SV 40) under the control of the Moloney murine sarcoma virus (MSV) enhancer and the SV 40 promoter develop inheritable uniform midline brain neoplasms showing features of primitive neuroectodermal tumors. The origin and histogenesis of these tumors were investigated in the present study. The brain and pineal organ of fetal and young transgenic mice less than 3 months old displayed normal macroscopic and microscopic features. In 3.5-month-old animals, the pineal organ was considerably enlarged due to hyperplasia, finally leading to tumor formation. Immunocytochemical demonstration of large T-antigen showed that this oncoprotein was already expressed in the nuclei of certain cells in the pineal organ of fetuses (16 and 18 days old) and newborn animals, but was absent from all other parts of the brain. The immunocytochemical demonstration of S-antigen (arrestin), a highly characteristic marker for pinealocytes, was used for further characterization of the large T-antigenimmunoreactive cells. The fetal pineal organ did not contain immunoreactive S-antigen. This first occurred in certain pinealocytes of newborn mice. Double immunostaining revealed that in newborn and older transgenic mice the immunoreactive large T-antigen was exclusively found in nuclei of cells containing S-antigen immunoreaction in their cytoplasm. Thus, transformed pinealocytes appear as stem cells of the experimental tumors. The results of this study suggest that primitive neuroectodermal tumors and the normal tissue from which they originate share certain molecular and immunocytochemical features.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 65-66 (Jan. 1991), p. 175-180 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 1375-1380 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3332-3338 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall-effect and infrared-absorption measurements are performed on n-type 4H-SiC samples to investigate the energy positions of the ground state and the excited states of the nitrogen donor in the 4H polytype of silicon carbide. Two electrically active levels (Hall effect) and three series of absorption lines (infrared spectra) are assigned to two nitrogen donor species which substitute on the two inequivalent lattice sites (h,k) in 4H-SiC. Valley-orbit splitting of the ground-state level of the nitrogen donors on hexagonal sites (h) is found to be equal to ΔEvo(h)=7.6 meV. It is shown that the energy position of excited states of both nitrogen donors can be calculated by the effective-mass approximation by assuming anisotropic effective masses m⊥=0.18m0 and m(parallel)=0.22m0. The influence of the two inequivalent lattice sites on the values of ionization energy and valley orbit splitting of the nitrogen donor ground-state levels is discussed.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3561-3568 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal donors (TDs) are generated in Czochralski (CZ)-grown silicon by heat treatments around 450 °C. They form several individual effective-mass-like donors with slightly different ionization energies and act as double donors (TDx0,TDx+). Heat treatments at elevated temperatures (e.g., 〉500 °C) lead to a competition of the formation and the annihilation of TDs. We studied the formation and the annihilation of TDs in the temperature range between 520 and 700 °C. CZ-grown Si samples with an initial total TD concentration of ∼5×1015 cm−3 were employed to study the annihilation of TDs. The number of interstitial oxygen atoms generated per annihilated TD center depends on the temperature and ranges from 4 to 24. For the temperature range investigated the activation energy for thermal annihilation of TDs was determined to be 2.5±0.4 eV. The same CZ-Si material but with an initial TD concentration of ∼2×1013 cm−3 was used to study the formation of TDs. During annealing, the concentrations of individual TDs reach equilibrium concentrations, which depend on the temperature of the final annealing step and the total oxygen concentration. We demonstrate that a model in which the individual TDx centers are represented by oxygen clusters of different sizes consistently explains our experimental data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on high-power AlGaInN flip-chip light-emitting diodes (FCLEDs). The FCLED is "flipped-over" or inverted compared to conventional AlGaInN light-emitting diodes (LEDs), and light is extracted through the transparent sapphire substrate. This avoids light absorption from the semitransparent metal contact in conventional epitaxial-up designs. The power FCLED has a large emitting area (∼0.70 mm2) and an optimized contacting scheme allowing high current (200–1000 mA, J∼30–143 A/cm2) operation with low forward voltages (∼2.8 V at 200 mA), and therefore higher power conversion ("wall-plug") efficiencies. The improved extraction efficiency of the FCLED provides 1.6 times more light compared to top-emitting power LEDs and ten times more light than conventional small-area (∼0.07 mm2) LEDs. FCLEDs in the blue wavelength regime (∼435 nm peak) exhibit ∼21% external quantum efficiency and ∼20% wall-plug efficiency at 200 mA and with record light output powers of 400 mW at 1.0 A. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 667-669 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation kinetics of acceptors was investigated for heteroepitaxial layers of GaN, doped with Mg. After growth, the samples were exposed to isochronal rapid thermal anneals in the temperature range from 500 to 775 °C. The samples were studied by variable temperature Hall effect measurements and photoluminescence (PL) spectroscopy in the as-grown condition and after each temperature step. The thermal treatment reduced the resistivity by six orders of magnitude and the p-type conductivity was found to be dominated by an acceptor with an activation energy of ∼170 meV. This acceptor is attributed to Mg atoms substituting for Ga in the GaN lattice and the activation process is consistent with dissociation of electrically inactive Mg–H complexes. It is shown that the appearance of a blue emission band in the PL spectrum of Mg-doped GaN does not directly correlate with the increase in p-type conductivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3144-3146 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of Si donors in heteroepitaxial layers of GaN were investigated. The n-type GaN layers were grown by metalorganic chemical vapor deposition and either intentionally doped with Si or unintentionally doped. The samples were evaluated by variable temperature Hall effect measurements and photoluminescence (PL) spectroscopy. For both types of samples the n-type conductivity was found to be dominated by a donor with an activation energy between 12 and 17 meV. This donor is attributed to Si atoms substituting for Ga in the GaN lattice (SiGa). The range of activation energies is due to different levels of donor concentrations and acceptor compensation in our samples. The assignment of a PL signature to a donor–acceptor pair recombination involving the Si donor level as the initial state of the radiative transition yields the position of the optical Si donor level in the GaN bandgap at ∼Ec–(22±4) meV. A deeper donor level is also present in our GaN material with an activation energy of ∼34 meV which is tentatively assigned to oxygen donors substituting for nitrogen (ON). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2379-2381 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-doped, n-type heteroepitaxial layers of Al0.12Ga0.88N grown by metalorganic chemical vapor deposition on SiC substrates were characterized by capacitance transient spectroscopies. Conventional deep level transient spectroscopy (DLTS) reveals the presence of a dominant deep level with an activation energy for electron emission to the conduction band of (0.61±0.02) eV. The activation energy of this deep level displays a pronounced field dependence as determined from double-correlation DLTS (DDLTS), which is indicative of a deep donor level in n-type semiconductors. A deep level is observed by optical-DLTS (O-DLTS) with a threshold energy for electron photoemission to the conduction band of 0.77 eV, which appears to be of identical origin as the dominant deep level detected by DLTS. Two additional deep levels are detected with O-DLTS in the upper half of the band gap of our Al0.12Ga0.88N sample with threshold energies of 0.83 and 1.01 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 242-244 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic and structural properties of GaN were investigated for heteroepitaxial layers grown by hydride vapor phase epitaxy. Uniform film nucleation on the sapphire substrates was facilitated by a GaCl pretreatment. The films were all unintentionally doped n type. Variable temperature Hall effect measurements reveal electron concentrations as low as 2×1017 cm−3 and electron mobilities as high as 460 cm2/V s at 300 K. The films exhibit bound exciton photoluminescence lines with a full width at half-maximum (FWHM) of 2.42 meV at 2 K. Transmission electron microscopy studies of the GaN/sapphire interface reveal a ∼200 nm thick, highly defective GaN layer consisting predominantly of stacking faults. The excellent quality of these GaN films is attributed to this "auto-buffer'' layer which enables growth of GaN cells with a dislocation density of ∼3×108 cm−2 after ∼12 μm of film growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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