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  • 11
    Electronic Resource
    Electronic Resource
    A Monte–Carlo approach to domain boundary precipitation in binary alloys (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6582-6587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Monte–Carlo approach on the second phase precipitation in polycrystalline binary alloys is developed. The approach starts from the kinetic spin-exchange Ising model and the Q-state Potts model, and a coupling algorithm for simulation of both phase precipitation and domain growth is developed. The simulation on a simplified system with slow domain boundary migration reveals precipitation phenomena on the domain boundaries. The effect of domain boundaries on the morphology and kinetics of the second phase precipitates is investigated. It is shown that the scaling concept and the Lifshitz–Slyozov–Wagner law are broken in the present system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368976
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  • 12
    Electronic Resource
    Electronic Resource
    Drift mobility of semiconductive La0.5Sr0.5CoO3 films measured using the traveling wave method (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 580-582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity and the drift mobility of La0.5Sr0.5CoO3 films deposited on fused silica substrates at 650 °C by pulsed-laser deposition have been measured by using the traveling-wave method. At room temperature, La0.5Sr0.5CoO3 films with semiconductivity have a hole density of 1×1021 cm−3, and drift mobility of 0.01 cm2/V s. The films underwent a paraferromagnetic transition around 240 K. The hopping process and tunneling effect of small polarons may be responsible for the conductive behavior above the Curie temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125823
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  • 13
    Electronic Resource
    Electronic Resource
    Low-field magnetoresistance in nanosized La0.7Sr0.3MnO3/Pr0.5Sr0.5MnO3 composites (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1110-1112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanosized La0.7Sr0.3MnO3/Pr0.5Sr0.5MnO3 (LSMO1−xPSMOx) ceramic composites are prepared using solid-sate sintering. Their microstructural, electro- and magnetotransport properties are characterized by means of various techniques. It is found that the antiferromagnetic/ferromagnetic coupling between PSMO/LSMO at low temperature and the weak ferromagnetic order of PSMO at high temperature results in enhanced low-field magnetoresistance (LFMR) of the composites. With increasing temperature up to 250 K the observed LFMR decays more slowly than that for pure LSMO and this behavior may be explained by the spin coupling near boundaries between LSMO and PSMO grains. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350602
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  • 14
    Electronic Resource
    Electronic Resource
    Partially crystallized La0.5Sr0.5MnO3 thin films by laser ablation and their enhanced low-field magnetoresistance (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2286-2288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous, partial-crystallized, and epitaxial La0.5Sr0.5MnO3 thin films have been deposited at various temperatures of 200–650 °C on (001) SrTiO3 substrates using pulsed-laser deposition. The x-ray diffraction and high-resolution transmission electron microscopy indicate complete (001) orientation of the crystalline structures in these films. Enhanced low-field magnetoresistance effect has been observed for the partial-crystallized thin films where the nanosized ferromagnetic crystals are embedded in nonferromagnetic amorphous matrix. It is argued that the amorphous layer separating the neighboring nanocrystals behaves as the barrier for the spin-polarized tunneling and/or spin-dependent scattering, resulting in enhanced magnetoresistance at low magnetic field. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126332
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  • 15
    Electronic Resource
    Electronic Resource
    Scaling on hysteresis dispersion in ferroelectric systems (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 236-238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hysteresis area as a function of frequency of the time-varying external electric field—hysteresis dispersion—for ferroelectric Pb(Zr0.52Ti0.48)O3 is measured, and the Monte-Carlo simulation on the hysteresis dispersion for a model ferroelectric lattice is performed too. We demonstrate the scaling behavior of the single-peaked hysteresis dispersion for the two ferroelectric systems, predicting a unique effective characteristic time for the domain reversal. This characteristic time shows an inversely linear dependence on the field amplitude as long as the amplitude is high enough that the reversible domain rotation response is negligible. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384894
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  • 16
    Electronic Resource
    Electronic Resource
    The large magnetoresistance property of La0.5Sr0.5CoO3−x thin films prepared by pulsed laser deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1047-1049 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality (001) thin film La0.5Sr0.5CoO3−x (LSCO) has been prepared on (001) SrTiO3 substrates by pulsed laser deposition under different oxygen pressures with and without postannealing. C-axis expansion of the LSCO with reducing oxygen pressure was revealed. The electrical resistivity increased over five orders of magnitude when oxygen pressure varied from 1.0 mbar (plus postannealing) to 10−3 mbar. The negative magnetoresistance (n-MR) property as a function of temperature and oxygen pressure was investigated. Linear dependence of the n-MR ratio on magnetic field and temperature was found and significant effect of oxygen stoichiometry on the n-MR was demonstrated. The film prepared at 650 °C and 0.1 mbar oxygen shows a n-MR ratio of −16% at 81 K under a field of only 0.2 T. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122080
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  • 17
    Electronic Resource
    Electronic Resource
    Realization of a photovoltaic transistor based on a steady-state internal polarization effect in asymmetric semiconductor superlattices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2787-2789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used molecular beam epitaxy to grow at 500 °C a graded InAlGaAs superlattice structure sandwiched by two heavily doped window layers which are directly connected to the gate and source of a discrete field-effect transistor (FET). Upon band-gap illumination, a steady-state photovoltage controllable by the light intensity is generated by the superlattice structure, which then modulates the drain current of the FET to the same amount as does a dc voltage source. The intrinsic response time of the photovoltaic effect is on the order of picoseconds, thus the modulation speed on the drain current is completely limited by the FET.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105860
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  • 18
    Electronic Resource
    Electronic Resource
    Dominant photogenerated valley current in a double-barrier resonant-tunneling diode (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2999-3001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dominant photogenerated valley current has been observed in an optically-excited InGaAs/AlAs double-barrier resonant-tunneling diode. The photogenerated valley current in the resonant-tunneling diode varies with the optical power level. Under intense illumination, the photogenerated valley current increases to such a high level that it becomes dominant over the peak current. As a consequence, the negative differential resistance of the device is removed. The observed photogenerated valley current is described by photogenerating electron-hole pairs in the depletion region adjacent to the double-barrier structure. Transient behavior of the photogenerated carriers is also studied. The observed dominant photogenerated valley current may have useful applications. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112489
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  • 19
    Electronic Resource
    Electronic Resource
    Period-doubling route to chaos in a semiconductor laser subject to optical injection (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3539-3541 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental measurements and a single-mode analysis of a quantum-well laser diode subject to strong optical injection are combined to demonstrate that the diode follows a period-doubling route to chaos. All laser parameters used in this model, including the influence of spontaneous emission noise, were experimentally determined based on the four-wave mixing technique. The transition to chaos can be used to reduce the uncertainty in the value of the linewidth enhancement factor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111218
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  • 20
    Electronic Resource
    Electronic Resource
    Picosecond response of steady-state photovoltaic effect in an asymmetrical graded semiconductor superlattice structure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1179-1181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A steady-state photovoltaic effect of picosecond response speed has been observed in an asymmetrical graded InAlGaAs superlattice structure with a responsivity of ∼0.3 V/W and a saturation photovoltage of ∼0.3 V. For 10 devices of varying sizes ranging from 51 to 502 μm in diameter, the measured full width at half-maximum of the impulse response to a 1.6-ps laser pulse varies only twofold from 29 to 58 ps. The intrinsic rise time of each device is less than 10 ps. Steady-state photovoltage signals were observed in all the devices when excited with 100-ps–2-μs laser pulses. No dc bias voltage is needed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108726
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