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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation technique'' [J. Appl. Phys. 76, 8215 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5487-5487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359608
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8215-8217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent single-phase rubidium titanyl phosphate (RTP) films having excellent crystalline properties have been deposited by excimer laser ablation method on (001)- and (010)-oriented potassium titanyl phosphate (KTP) substrates, respectively. X-ray θ-2θ scans and pole figures showed that the laser-ablated RTP films grew epitaxially on, and had exactly the same orientations of, the underlying KTP substrates. X-ray photoelectron spectroscopy analysis revealed that the RTP films prepared with this method are nearly stoichiometric. It appears to be possible to use these films as waveguides having sharp waveguide/substrate interfaces. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357884
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  • 3
    Electronic Resource
    Electronic Resource
    The role of an electric field applied during pulsed laser deposition of LiNbO3 and LiTaO3 on the film orientation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7089-7093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low electric field applied during film deposition has a significant influence on the orientation of ferroelectric thin films prepared by pulsed laser deposition. C-axis oriented growth of LiNbO3 films was demonstrated on fused silica with the aid of a low bias voltage Vb=0–120 V, and complete c-axis orientation was achieved at Vb=110 V. In contrast, the electric field cannot induce c-axis orientation of LiTaO3 films. Theoretical analysis suggests that the electrostatic energy provides an extra driving force for the c-axis oriented growth of the ferroelectric films if the permittivity components satisfy ε33/ε11≤2, as in LiNbO3 film, but not if ε33/ε11〉2 at the deposition temperature, as in LiTaO3 film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363720
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  • 4
    Electronic Resource
    Electronic Resource
    In situ electrical-field-induced growth and properties of Bi3TiNbO9 ferroelectric thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4559-4561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With Bi3TiNbO9 (BTN) ferroelectric samples, in situ electrical-field-induced growth of ferroelectric thin films was demonstrated to control the films' microstructure and manipulate their ferroelectric properties. BTN films on Ti/SiO2/Si substrates were grown at a relatively low temperature (650 °C) with a biased electrical field during pulsed-laser deposition. The (001) orientation of the films, which makes no contribution to their polarization, was effectively reduced by the in situ electrical field of strength of 70 V/cm. This results in a large increase of remnant polarization from 1.1 to 6.2 μC/cm2, and reduction of the coercive field from 70 to 50 kV/cm, comparing the films grown freely under the same condition. Furthermore, the films showed an excellent fatigue-free property of up to 1010 switching cycles. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430023
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  • 5
    Electronic Resource
    Electronic Resource
    Studies of metal–ferroelectric–GaN structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2416-2417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaN-based metal–insulator–semiconductor (MIS) structure has been fabricated by using ferroelectric Pb(Zr0.53Ti0.47)O3 instead of conventional oxides as insulator gate. Because of the polarization field provided by ferroelectric and the high dielectric constant of ferroelectric insulator, the capacitance–voltage characteristics of GaN-based metal–ferroelectric–semiconductor (MFS) structures are markedly improved compared to those of other previously studied GaN MIS structures. The GaN active layer in MFS structures can reach inversion just under the bias of smaller than 5 V, which is the generally applied voltage used in semiconductor-based integrated circuits. The surface carrier concentration of the GaN layer in the MFS structure is decreased by one order compared with the background carrier concentration. The GaN MFS structures look promising for the practical application of GaN-based field effect transistors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125032
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  • 6
    Electronic Resource
    Electronic Resource
    Ferroelectric properties of Sr2Bi4Ti5O18 thin films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3112-3114 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi-based layered ferroelectric thin films of Sr2Bi4Ti5O18 (SBTi) were prepared by pulsed-laser deposition. The c-axis-oriented SBTi films were grown on SrRuO3 seeded Pt/TiO2/SiO2/Si substrates while polycrystalline SBTi films were grown on Pt/TiO2/SiO2/Si substrates. The measurements of ferroelectricity revealed that the direction of spontaneous polarization was not along the c axis since the polarization of c-axis-oriented films was much less than that of randomly oriented films. There was no significant degradation of switchable charge at least up to 1011 cycles for the randomly oriented films, suggesting that, even with Ti which was widely accepted to contribute to the fatigue of Pb(Zr, Ti)O3, SBTi showed superior fatigue characteristics. The randomly oriented films also showed excellent retention characteristics after 105 s. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126540
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  • 7
    Electronic Resource
    Electronic Resource
    High-resolution electron microscopy investigations on stacking faults in SrBi2Ta2O9 ferroelectric thin films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 973-975 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural planar defects in the SrBi2Ta2O9 (SBT) films with 10 mol % excess Bi grown in Pt/TiO2/SiO2/Si substrates by metalorganic deposition have been observed by high-resolution electron microscopy. It was found that these stacking defects were planar defects with extra Bi–O planes normal to the c axis. These structural defects are expected to effectively improve the ferroelectric response and fatigue-resistance characteristics of SBT films because of the extra Bi–O planes having higher strucutral flexibility and alleviating the mechanical stresses and strains as well as injected-charge problems. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1332106
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  • 8
    Electronic Resource
    Electronic Resource
    Evidence for ferroelectric border traps near the SrBi2Ta2O9/Si interface through capacitance–voltage measurement (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 564-566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal–ferroelectric–semiconductor (MFS) structure has been developed by depositing SrBi2Ta2O9 (SBT) films directly on n-type (100) Si by pulsed laser deposition. In the MFS structure, evidence for ferroelectric border traps in the SBT film has been obtained by high-frequency capacitance–voltage (C–V) measurement. When the ramp rate of voltage is higher than 200 mV/s, typical ferroelectric C–V hysteresis loops with the counterclockwise direction are obtained in C–V plots. When the ramp rate is lower than 80 mV/s, the ferroelectric hysteresis loops are replaced by the trap-induced ones with the clockwise direction. This pronounced change results from the fact that more and more border traps in SBT can communicate with the underlying Si. The border-trap density at the ramp rate of 10 mV/s is as high as 1.8×1012 cm−2. Moreover, the width of the hysteresis loops changes linearly with the logarithmic decrease in ramp rate, which is consistent with the ferroelectric border traps communicating with Si by tunneling or a thermally activated process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127045
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  • 9
    Electronic Resource
    Electronic Resource
    Drift mobility of semiconductive La0.5Sr0.5CoO3 films measured using the traveling wave method (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 580-582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity and the drift mobility of La0.5Sr0.5CoO3 films deposited on fused silica substrates at 650 °C by pulsed-laser deposition have been measured by using the traveling-wave method. At room temperature, La0.5Sr0.5CoO3 films with semiconductivity have a hole density of 1×1021 cm−3, and drift mobility of 0.01 cm2/V s. The films underwent a paraferromagnetic transition around 240 K. The hopping process and tunneling effect of small polarons may be responsible for the conductive behavior above the Curie temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125823
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  • 10
    Electronic Resource
    Electronic Resource
    Enhanced fatigue and retention properties of Pb(Ta0.05Zr0.48Ti0.47)O3 films using La0.25Sr0.75CoO3 top and bottom electrodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3698-3700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric perovskite Pb(Ta0.05Zr0.48Ti0.47)O3 thin-film capacitors having LaxSr1−xCoO3 bottom and top electrodes have been prepared on Pt/TiO2/SiO2/Si(001) substrates by pulsed-laser deposition. It is found that La0.25Sr0.75CoO3 bottom electrodes with cubic structure strongly promote the formation of (001) texture of PTZT films and improve the fatigue and retention properties of the capacitors. The polarization of the La0.25Sr0.75CoO3/Pb(Ta0.05Zr0.48Ti0.47)O3/La0.25Sr0.75CoO3 capacitors with a Pb(Ta0.05Zr0.48Ti0.47)O3 thickness of 400 nm were subjected to no degradation after 1×1010 switching cycles at an applied voltage 5 V with a frequency of 1 MHz. The capacitor retains more than 92.6% of its polarization after a retention time up to 105 s. The possible microstructural background responsible for the excellent fatigue and retention properties was discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125433
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