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  • 11
    Electronic Resource
    Electronic Resource
    The change of magnetic properties in nanocrystalline Fe88Zr7B4Cu1 alloy by cooling rate : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5153-5155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of cooling rate, followed immediately after the isothermal annealing, on the magnetic properties of melt-spun Fe88Zr7B4Cu1 alloy. As the cooling rate is increased, the effective permeability, 2×104, improved by 50% on annealing at around 650 °C. The remanence ratio is also found to concomitantly decrease with the increasing cooling rate. The increase of permeability and decrease of remanence ratio are consistent with the expected suppression of the induced magnetic anisotropy. From an analysis of the transmission electron microscopy micrographs, and the x-ray diffraction spectral intensities, we find that the volume fraction of the amorphous matrix to that of the nanocrystallized magnetic entities to be about 20%, at which the permeability has the maximum value for this system. Scanning electron microscopy and antiferromagnetic investigations show a much smoother surface morphology with a finer grain distribution in the rapidly quenched sample. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361538
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  • 12
    Electronic Resource
    Electronic Resource
    Effect of CeO2 interlayer deposition temperature on growth behavior of Bi4Ti3O12/CeO2/MgO heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CeO2 interlayers were used to control growth behavior of Bi4Ti3O12 thin films on MgO(001) substrates. The CeO2 layer grown at 740 °C had a preferential orientation with its c-axis normal to the film surface, so it could be used to grow an epitaxial Bi4Ti3O12(001)/CeO2(001)/MgO(001) heterostructure. On the other hand, the CeO2 layer grown at 650 °C showed a mixed texture of (001) and (111), and this interlayer enabled us to get a preferentially oriented Bi4Ti3O12(117)/CeO2(111)MgO(001) multilayer structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117063
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  • 13
    Electronic Resource
    Electronic Resource
    Interface chemistry and electrical properties of SrVO3/LaAlO3 heterostructures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7056-7059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrVO3 films were grown by laser molecular beam epitaxy on LaAlO3 substrates. For a 10-nm-thick film, its resistivity could be reduced by a factor of 4 by inserting a single La–O atomic layer on an oxygen-annealed LaAlO3 substrate. X-ray diffraction and x-ray photoelectron spectroscopy measurements revealed that oxygen defect concentrations could be varied significantly by controlling the substrate terminations, i.e., interface chemistry. It was suggested that the interface chemistry could influence formation of extended defects and result in changes in electrical properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326896
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  • 14
    Electronic Resource
    Electronic Resource
    Structural and electro-optic properties of pulsed laser deposited Bi4Ti3O12 thin films on MgO (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2198-2200 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric Bi4Ti3O12 thin films have been grown on MgO (100) and MgO(110) substrates by the pulsed laser deposition. X-ray diffraction studies show that the films on both substrates have preferential crystallographic orientation such that most of their c axes are close to the substrate normal direction. The film on MgO(110) shows quadratic and hysteretic electro-optic characteristics with the effective coefficient of about 3.8×10−15 m2/V2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110552
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  • 15
    Electronic Resource
    Electronic Resource
    Structural and electro-optic properties of laser ablated Bi4Ti3O12 thin films on SrTiO3(100) and SrTiO3(110) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1516-1518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi4Ti3O12 thin films have been grown by laser ablation on SrTiO3(100) and SrTiO3(110) substrates. Substrate surface orientation is found to be an important growth parameter which determines crystal axis orientation, grain growth behavior, and electro-optic properties of the Bi4Ti3O12 thin films. The films grown on SrTiO3(110) shows a ferroelectric phase transition near 720 °C and a large quadratic electro-optic effect with the effective coefficient 1.1×10−16 m2/V 2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107534
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  • 16
    Electronic Resource
    Electronic Resource
    Growth of highly oriented Bi4Ti3O12(104) thin films on Al2O3(0001) substrates using pulsed laser deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2780-2782 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using pulsed laser deposition, Bi4Ti3O12 thin films were grown on Al2O3(0001) substrates. Laser fluence, substrate temperature, and oxygen pressure during deposition were varied in wide ranges, and their effects on Bi4Ti3O12 growth behaviors were investigated. It is possible to grow a Bi4Ti3O12 film whose (104) planes are normal to the Al2O3 c axis. However, the Bi4Ti3O12 film is not grown epitaxially. Instead, it is composed of grains with their c axes along six crystallographic orientations. This growth behavior of preferential orientations is explained in terms of atomic arrangements in the Bi4Ti3O12(104) and the Al2O3(0001) planes. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112561
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  • 17
    Electronic Resource
    Electronic Resource
    Leakage current behaviors in rapid thermal annealed Bi4Ti3O12 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1525-1527 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi4Ti3O12 thin films have been grown on indium-tin-oxide coated glass by pulsed laser deposition. Films are rapidly thermal annealed at 650 °C in three kinds of atmospheres such as O2, N2, and air. The annealing atmosphere is found to be an important growth parameter which determines the crystallization, microstructures, and the leakage current behaviors. The film annealed in oxygen has a columnar grain structure with an amorphous phase, and its leakage current behavior is in agreement with the prediction of the space-charge-limited conduction model. The film annealed in nitrogen has polycrystalline porous structure, and its high field conduction is well explained by the thermoionic emission model, called the Poole–Frenkel emission. On the other hand, the film annealed in air has both the columnar and porous structures, and its electrical behavior shows characteristics of both models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112032
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  • 18
    Electronic Resource
    Electronic Resource
    Low-temperature growth of epitaxial LiNbO3 films on sapphire (0001) substrates using pulsed laser deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 43-45 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial LiNbO3 films were grown on sapphire (0001) substrates using pulsed laser deposition. A single-crystal LiNbO3 was used as a target. Growth behaviors of the LiNbO3 films deposited at various deposition conditions such as temperature, oxygen pressure, and annealing condition were studied. Deposition temperature is found to be an important parameter which enables us to grow LiNbO3 films without the LiNb3O8 phase: formation of the Li deficient phase can be suppressed by depositing the films at temperature below 500 °C. Oxygen pressure during deposition influences crystallographic orientations of the films. An x-ray pole figure shows that epitaxial LiNbO3 film was grown, but with twin boundaries. The ordinary refractive index of the film was found to be 2.28, which is in good agreement with the bulk value. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115486
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  • 19
    Electronic Resource
    Electronic Resource
    Leakage current behaviors of epitaxial and preferentially oriented Bi4Ti3O12 thin films grown on La0.5Sr0.5CoO3 bottom electrodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3120-3122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial and preferentially oriented Bi4Ti3O12 thin films were grown using pulsed laser deposition on LaAlO3(001) and Al2O3(0001) substrates, respectively, with La0.5Sr0.5CoO3 bottom electrode layers. X-ray diffraction analysis shows that the Bi4Ti3O12 films are grown (001) and (104) oriented on La0.5Sr0.5CoO3(001)/LaAlO3(001) and La0.5Sr0.5CoO3(111)/Al2O3(0001), respectively. These growth behaviors can be explained using arrangements of oxygen ions. Cross-sectional scanning electron microscopy shows that microstructures of the heterostructures depend on the substrates. It is found that the growth behaviors and the microstructure affect leakage current behaviors of the Bi4Ti3O12 layers. Ohmic and space-charge-limited conduction mechanisms are used to explain leakage current behaviors of the Bi4Ti3O12 film on La0.5Sr0.5CoO3/LaAlO3(001) and La0.5Sr0.5CoO3/Al2O3(0001), respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113622
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  • 20
    Electronic Resource
    Electronic Resource
    Different fatigue behaviors of SrBi2Ta2O9 and Bi3TiTaO9 films: Role of perovskite layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2644-2646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the role of the perovskite layers on fatigue behaviors, SrBi2Ta2O9(SBT) and Bi3TiTaO9 (BTT) films were prepared by pulsed laser deposition using 15% Bi-excess bulk targets. The SBT and the BTT films grown at the similar deposition conditions showed similar growth behaviors, electrical properties, and retention characteristics. However, these films showed very different fatigue behaviors. The difference should come from the oxygen stability in the perovskite layer. Our work demonstrates that oxygen stability of the perovskite layers, as well as the self-regulating adjustment of the Bi2O2 layers, should be considered in the search for new candidate materials for nonvolatile ferroelectric memory devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125105
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