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  • 11
    Electronic Resource
    Electronic Resource
    Laser-induced fluorescence of HCF and HCCl
    Amsterdam : Elsevier
    Chemical Physics Letters 136 (1987), S. 93-96 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(87)87304-9
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  • 12
    Electronic Resource
    Electronic Resource
    Chemiluminescence of CF"2(^3B"1) produced by the reaction O(^3P) + C"2F"4
    Amsterdam : Elsevier
    Chemical Physics Letters 121 (1985), S. 395-399 
    Details
    ISSN: 0009-2614
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0009-2614(85)87201-8
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  • 13
    Electronic Resource
    Electronic Resource
    Growth modes of ZnSe on GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1164-1166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth modes of coherently strained ZnSe on GaAs are investigated as a function of the surface preparation and temperature. We find that the flattest and most uniform layers are grown at low temperatures, ∼300 °C, on surfaces exposed to high-temperature Se treatment. Nucleation rate depends on the surface coverage of Ga2Se3. High-temperature exposure of Ga-rich, (001)-oriented, GaAs to Se reduces the thickness required for the transition to a two-dimensional growth mode. The surface roughness increases with temperature as a result of three-dimensional island growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362709
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  • 14
    Electronic Resource
    Electronic Resource
    Textures of Ta/Al multilayer films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3827-3829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ta/Al multilayer films with a modulation wavelength of 7.0 nm were grown using magnetron sputtering. The Bragg θ-2θ scan pattern and the plate film photograph of x-ray diffraction reveal that the sample has Ta(110) and A1(111) axial textures with a mosaic spread of about ±5° and coherency strains. The structure change of the multilayer sample after annealing at 550 °C for 2 h is determined by the plate film photography of x-ray diffraction to study the thermal stability. It is found that after annealing a large amount of Ta and Al atoms at the interfaces are combined into TaAl3 with [(202)+(002)] textures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352890
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  • 15
    Electronic Resource
    Electronic Resource
    Mechanisms of Amino Acid and Glucose Uptake by Pneumocystis carinii (2001)
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 48 (2001), S. 0 
    Details
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1550-7408.2001.tb00497.x
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  • 16
    Electronic Resource
    Electronic Resource
    Dispersion curves and transmission spectra of a two-dimensional photonic band-gap crystal: Theory and experiment (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3631-3636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An on-shell method that combines plane-wave and finite-difference techniques for the calculation of dispersion curves and transmission spectra for electromagnetic fields in photonic band-gap crystals is presented. The overall problem is decomposed into a field problem of determining the plane-wave scattering from an individual crystalline layer and a conventional one-dimensional network problem of combining this scattering to obtain the band structure of the entire crystal or the scattering properties of a crystal with a finite thickness. Results of the calculation are compared with experimental data measured using ultrawideband microwave pulses for a two-dimensional photonic band-gap crystal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358599
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  • 17
    Electronic Resource
    Electronic Resource
    Structural characterization of Ta/Al multilayer films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5258-5260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ta/Al multilayer films with modulation wavelength 4.6 and 9.5 nm were fabricated by magnetron sputtering. The structure of the multilayer was studied by x-ray diffraction. The combination of Ta and Al forms a metallic superlattice with Ta(110) and Al(111) textures. The x-ray diffraction patterns were simulated using the model for the modulated composition multilayer. The coherence length perpendicular to the film is about 100 nm. The composition modulation is approximately a trapezoidal wave. The thickness of the transition layer is about 1.00 nm for the multilayer with a modulation wavelength of 4.6 nm. The fluctuation of atomic planes in each period is about 5%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343713
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  • 18
    Electronic Resource
    Electronic Resource
    Phase separation in deuterated polycarbonate/poly(methylmethacrylate) blend near glass transition temperature (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 2095-2100 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Early stage of spinodal decomposition kinetics of deuterated polycarbonate/poly(methylmethacrylate) blend has been studied by the time resolved small angle neutron scattering measurements. A trapped miscible state was obtained through fast solution casting of film specimens. Time dependence of the structure factor, S(q,t), was measured after the specimen temperature was quickly increased to a final temperature which is above its glass transition temperature, Tg. Thus, the early stage of spinodal decomposition kinetics has been observed starting from the dimension (q−1) comparable to the single chain radius of gyration, Rg, for a binary polymer mixture. The results provide an unequivocal quantitative measure of the virtual structure factor, S(q,∞); the relationship of qm and qc through rate of growth, Cahn-plot analysis, and singularity in S(q,∞); the growth of fluctuation of qRg〈1 and intrachain relaxation of qRg(approximately-greater-than)1; and also a clear proof of the Cahn–Hillard–Cook theory in the early stage of spinodal decomposition of a mean-field system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465275
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  • 19
    Electronic Resource
    Electronic Resource
    Excitons bound to nitrogen clusters in GaAsN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1538-1540 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the photoluminescence from GaAsN/GaAs, with the nitrogen content of less than 0.5%. The low-temperature photoluminescence spectra are composed of several excitons bound to nitrogen complexes, each associated with different composition or configuration. These features were studied as a function of the excitation intensity, temperature, concentration, and growth conditions. The dependence of the binding energy of the dominant recombination center on the nitrogen concentration is interpreted in terms of a hierarchy of nitrogen complexes, from centers composed of at least two nitrogen atoms to more extended clusters. These excitonic transitions are very sensitive to growth parameters and can be used to study the statistical distribution of nitrogen in nominally uniform layers. We also show that the transition from nitrogen doping to alloy formation occurs for nitrogen concentrations above 0.25%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124748
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  • 20
    Electronic Resource
    Electronic Resource
    Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3516-3518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of GaAsN were grown on GaAs by metalorganic molecular beam epitaxy using dimethylhydrazine, triethylgallium, and conventional arsenic sources. The nitrogen incorporation in GaAsN was studied by varying the arsenic and gallium fluxes, at growth temperatures between 430 and 500 °C. The nitrogen incorporation kinetics and growth mechanism have been modeled by assuming formation of an adduct of trimethylgallium and dimethylhydrazine. The model accounts for experimentally observed relationships between growth rates and incorporation of N into GaAsN, fluxes of Ga, As, and N, and the growth temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124138
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