Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 11
    Electronic Resource
    Electronic Resource
    Binding energies of shallow donors in semi-insulating GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2148-2150 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used photoluminescence from two electron satellites of donor-bound excitons as well as selective pair luminescence spectroscopy to study shallow donor levels in semi-insulating bulk GaAs. Bound exciton spectroscopy gives a donor binding energy equal to the effective mass value (5.8 meV) for all samples investigated. Selective pair luminescence, in contrast, yields a sample-dependent value for the average donor binding energy, which varies between 5.8 and ∼7 meV. This discrepancy is attributed to the fact that bound exciton spectroscopy probes all donor levels whereas selective pair luminescence is sensitive to donors close to acceptors which are therefore more strongly disturbed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339514
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Raman scattering from extremely thin hard amorphous carbon films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 729-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hard amorphous hydrogenated carbon (a-C:H) films with thicknesses varying from 10 to 2000 A(ring) were plasma deposited on Si or Ge and studied by Raman spectroscopy. Using optical multichannel detection it was possible to record light scattering spectra from even the thinnest films. The main peak in the Raman spectrum, which is at ∼1520 cm−1 for thick (a-C:H) films, shows a frequency down shift for layers thinner than 100 A(ring). This mode softening, which amounts to 70 cm−1 for 10-A(ring) a-C:H on Si, is substrate dependent. It reflects the free surface of the film as well as the carbon-substrate bonding at the interface. The Raman scattering intensity shows a pronounced enhancement for films with an optical thickness of about 1/4 of the exciting laser wavelength. This behavior is explained in terms of interference-enhanced Raman scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339754
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on ion-implanted and neutron transmutation-doped GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3050-3054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy with optical multichannel detection was used to study Se+ implanted and neutron-transmutation doped GaAs, both before and after rapid thermal annealing. Samples implanted at room temperature showed an amorphous surface layer, whereas those implanted at 320 °C exhibited Raman features of both amorphous and crystalline GaAs. After rapid thermal annealing, the material implanted at elevated temperatures showed a better structural recovery, as indicated by a lower intensity of forbidden phonon scattering. Using resonance Raman effects, we were able to discriminate between amorphous and crystalline features in the spectra. For the neutron-transmutation doped GaAs, the as-irradiated material showed a Raman spectrum similar to the one of undoped crystalline GaAs. The increase in electrical activation with increasing annealing temperature was monitored by Raman scattering from coupled plasmon-phonon modes, giving a carrier concentration comparable to the one obtained from Hall measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337856
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Two-color GaAs/(AlGa)As quantum well infrared detector with voltage-tunable spectral sensitivity at 3–5 and 8–12 μm (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 666-668 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a novel GaAs:Si/(AlGa)As multiquantum well photodetector structure which exhibits photoresponse maxima in both the 8–12 and 3–5 μm spectral regions. The relative intensity of these maxima strongly depends on the bias voltage, demonstrating the potential of such a structure as a tunable two-color intersubband detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107816
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering and spectral ellipsometry on InAs/GaSb superlattices with different interfaces (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2972-2974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used Raman spectroscopy and spectral ellipsometry to investigate InAs/GaSb short-period superlattices (SLs), grown by molecular-beam epitaxy, with either InSb- or GaAs-like interfaces. Room-temperature ellipsometric measurements show spectral features in the dielectric function due to the E1 and E1+Δ1 interband transitions of GaSb and InAs. For SLs with small InAs layer thicknesses (4 ML InAs/10 ML GaSb) the critical point energies are found to depend on the type of interfacial bonding, with an energy shift of up to 50 meV observed between SLs with GaAs- and InSb-like interfaces. Resonant Raman measurements show a pronounced enhancement in scattering efficiency for the superlattice phonons and, in particular, for the interface modes for incident photon energies matching the critical point energies of the SL. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112480
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Transport asymmetry and photovoltaic response in (AlGa)As/AlAs/GaAs/(AlGa)As single-barrier quantum-well infrared detectors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1471-1473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the wavelength and electric-field characteristics of intersubband photodetectors where a thin AlAs tunnel barrier was introduced between one side of the GaAs quantum well and thicker layers of (AlGa)As. The photoresponse of these structures has an extremely broad (3–11 μm) spectral range and there is a preferential escape direction of the photoexcited carriers towards one direction of the quantum wells giving rise to photovoltaic detector behavior. We found evidence that this transport asymmetry is not only caused by the asymmetric potential distribution, but that interface scattering processes are involved. These scattering processes act differently on the photocurrent and the dark current, which is useful for further optimization of quantum-well infrared detectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107274
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    Raman depth profiling by in situ sputtering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3616-3618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been combined with in situ sputtering for a depth resolved Raman spectroscopic characterization of semiconductor structures. Using optical excitation in resonance with higher lying band gaps, such as the E1 band gap of GaAs, a depth resolution of a few nm can be achieved along with an enhanced sensitivity due to resonance effects in the scattering efficiency. The present experimental technique is demonstrated by recording a composition profile from a GaAs/AlxGa1−xAs multiple quantum well structure. Furthermore, the ability of lattice site selective depth profiling of dopant distributions is shown for Si incorporated on Ga and As lattice sites, respectively, in Si+ implanted and annealed GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105624
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Raman scattering from vibrational modes in metalorganic molecular beam epitaxy grown carbon doped InP: spectroscopic search for the carbon donor (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 647-649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vibrational modes of carbon doped InP have been investigated by Raman scattering and cluster-Bethe-lattice calculations. In contrast to other carbon doped III–V semiconductors, the InP samples grown by metalorganic molecular beam epitaxy (MOMBE) show n-type conductivity. Raman spectra from such samples reveal a vibrational mode at 220 cm−1. The frequency of this mode lies in the gap between the acoustic and optical branches of the phonon dispersion (gap mode). Cluster-Bethe-lattice calculations predict such a gap mode only for the carbon donor on the In site and not for the carbon acceptor on the P site. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115190
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 733-735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using infrared transmission and Raman spectroscopy, we have studied the optical phonon modes of GaN layers grown on GaAs(001) substrates by molecular beam epitaxy. The crystal structure of the GaN layers ranges from predominantly wurtzite to predominantly zincblende depending on the growth conditions. The transverse and longitudinal optical phonons in cubic GaN are found to be at 552 and 739 cm−1, respectively. These frequencies are slightly shifted with respect to the corresponding A1 and E1 phonon modes in hexagonal GaN. The frequency shifts, together with Raman scattering selection rules, can be used for identifying the phase composition of GaN. A more distinct fingerprint of the hexagonal phase is provided by the occurrence of the E2 phonon modes that are spectrally separated from optical phonon modes in the cubic phase and thus uniquely related to the hexagonal phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115208
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    Raman spectroscopic study on the wirelike incorporation of Si dopant atoms on GaAs(001) vicinal surfaces (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 490-492 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering by collective electronic excitations from a δ-doping layer has been used to investigate the ordered incorporation of Si dopant atoms on vicinal GaAs(001) surfaces. In a series of δ-doped samples grown by molecular beam epitaxy (MBE) under specific conditions the Si dopant atoms were found to be incorporated predominantly on Ga sites, even at a doping concentration as high as 1.8×1013 cm−2. A pronounced polarization asymmetry in the Raman scattering intensity of collective intersubband plasmon-phonon modes was observed in a sample grown under conditions established by real-time high-energy electron diffraction to be favorable for wirelike Si incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111139
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...