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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1979-1981 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temperature dependence of excitonic photoluminescence (PL) from ZnO/(Mg, Zn)O multiple quantum wells (MQWs). Two kinds of MQWs having different barrier heights grown by laser molecular-beam epitaxy showed significantly different temperature dependences of PL spectra; in ZnO/Mg0.27Zn0.73O MQWs, the PL peak energy at 50–200 K was a monotonically increasing function of temperature, which was opposite to that ascribed by band gap shrinkage. Moreover, spectra taken at 95–200 K encompassed two peaks, both of which originated from recombination of localized excitons. The temperature-induced shift (redshift-blueshift-peak duplication-redshift) at 5–300 K is caused by a change in the exciton dynamics with increasing temperature due to inhomogeneity and the exciton localization effect. On the other hand, the corresponding dependence in ZnO/Mg0.12Zn0.88O MQWs (lower barrier height) was similar to that in bulk II–VI semiconductors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1000-1002 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the recording of a three-dimensional (3D) pattern in bulk polymethyl metacrylate (PMMA) films by microexplosion induced by a tightly focused (numerical aperture of oil-immersion objective was 1.3) single laser shot. Recording was done by picosecond (ps) single-pulse irradiation at 532 nm and by femtosecond at a 400 nm wavelength. The light-induced damage threshold of PMMA was found at ∼4 MW/cm2 for ps damaging. Readout of the 3D pattern was carried out by the recording of the transmission and the photoluminescence (PL) of bits. We demonstrate the possibility exciting PL of the optically damaged area inside the PMMA by one- and two-photon absorption. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4250-4252 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of ultraviolet stimulated emission was investigated in ZnO/ZnMgO multiquantum wells. Stimulated emission induced by exciton–exciton scattering occurred throughout a range of temperatures from 5 K to room temperature. At temperatures higher than 160 K, stimulated emission due to electron-hole plasma recombination was also observed with a higher excitation threshold than that of exciton–exciton scattering. The exciton binding energies of multiquantum wells were larger than that of bulk ZnO and increased with a decrease in the well widths. This enhancement of exciton binding energy is due to the quantum-confinement effect and is favorable for the stability of exciton states. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2287-2289 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An alternative approach to the synthesis of mono-sized and parallel-aligned single-wall carbon nanotubes (SWCNs) is reported. The SWCNs are formed in 0.73 nm sized channels of microporous aluminophosphate crystallites by pyrolysis of tripropylamine molecules in the channels. They are characterized through transmission electron microscopy, polarized Raman scattering, and electrical transport measurements. Our results would open a door to further detailed studies on the intrinsic properties of carbon nanotubes now in progress. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2017-2019 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simultaneous study of Auger spectra and secondary electron emission from the chemical vapor deposited diamond films under extended electron beam exposure is presented. Up to a 1.2 eV increase in energy of the carbon Auger peak accompanied by the decrease of the total secondary electron yield has been found. Exposure to hydrogen has resulted in recovery of the both Auger peak position and secondary yield. First-principles electronic structure calculations have shown that the effect is due to a change in the surface upper-valence band local density of states of the diamond crystal which is dependent on the extent of hydrogen coverage of the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 164-166 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous KNbO3 films are prepared by a low-cost sol–gel method. These films show a smooth surface morphology and have good waveguiding properties. Ferroelecticlike hysteresis loops are observed in these amorphous KNbO3 films with a remanant polarization of about 6μC/cm2. After corona poling, a stable effective second harmonic generation coefficient of 0.523 pm/V is achieved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2457-2459 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption spectra of Se chains formed in channels of AlPO4-5 (AFI) crystals are measured in the temperature range from 80 to 298 K. The excitonic energy of the isolated Se chains is observed to shift to lower energy linearly with increasing temperatures, in sharp contrast to the positive temperature coefficient in trigonal-Se crystal. The marked change in the temperature behavior of the excitonic energy is attributed to the greatly diminished interchain interaction in Se–AFI as well as the weakening of the electron-optical-phonon coupling in a low-dimensional system. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2464-2466 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The excitonic properties of high-quality ZnO/Zn0.88Mg0.12O multiquantum wells grown by laser-molecular-beam epitaxy were investigated using temperature-dependent optical absorption spectra from 5 K to room temperature. The strength of exciton-longitudinal-optical (LO) -phonon coupling was deduced from the temperature dependence of the linewidth of the fundamental excitonic peak. Effective reduction of the exciton-LO-phonon coupling with decreasing the well width was observed, which is consistent with the confinement-induced enhancement of the exciton binding energy. The thermal shift of the lowest excitonic energy is independent of well width, indicating that the strain effect is negligible for this material. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 975-977 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the optical properties of ZnO/(Mg, Zn)O multiple quantum wells (MQWs) on lattice-matched ScAlMgO4 substrates fabricated by laser molecular-beam epitaxy. As the well layer thickness decreased down to 7 Å, the photoluminescence (PL) and absorption peaks showed a systematic blueshift, consistent with the quantum-size effect. Moreover, a bright PL of free excitons could be observed even at room temperature. As a result, the PL could be tuned in the energy range of 3.3–3.6 eV by choosing the appropriate barrier height and well layer thickness. The widest tunability on the room-temperature luminescence of the excitons could be attained on the basis of the ZnO quantum structure. These favorable properties could not be attained in the MQWs on lattice-mismatched sapphire substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 13-15 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the readout of three-dimensional (3D) optical memory in silica by detecting the photoluminescence (PL) of the bits (voxels). A broad defect-related PL band at 400–700 nm was excited by two-photon absorption of femtosecond (pulse duration of 120 fs) illumination at 795 nm. We employed a simple reflection-type scanning readout without the use of a confocal detection scheme to read 3D memory by recording the PL of the bits (the same objective lens was used for the excitation and the collection of the PL). Bit plane separation as small as 3 μm was resolved without cross talk, when the theoretical limit of the axial resolution evaluated as a full-width at half maximum measure of a bit size was 1.4 μm at the fabrication conditions employed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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