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  • 1
    Electronic Resource
    Electronic Resource
    Conformationally restricted phenothiazine neuroleptics. 1. 3-(Dimethylamino)-1,2,3,4-tetrahydroazepino[3,2,1-kl]phenothiazine (1980)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 23 (1980), S. 938-941 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00182a022
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  • 2
    Electronic Resource
    Electronic Resource
    Novel electrical and annealing properties of defects in electron irradiated silicon p+-n junctions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1535-1540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel results on defect annealing behavior and minority-carrier lifetime control in electron irradiated silicon p+-n junctions are presented. Two mechanisms are found to be involved in the annealing process of the divacancies; one dominates in the lower temperature range (from 240 to 300 °C) and the other dominates in the higher temperature range (from 320 to 360 °C). A defect labeld as E3 with an energy level at 0.37 eV below the conduction band is found to be an efficient recombination channel responsible for minority carrier lifetime control. The activation energy for dissociation of the defect E3 obtained from the annealing study is 1.7 eV, and the frequency factor is 2.8×109 s−1. Annealing of electron irradiated samples at about 300 °C, or performing the electron irradiation at a similar high temperature is found to increase the concentration of the defect E3, and stabilize the carrier lifetime. These processes might be useful to improve the thermal stability of devices like high-voltage rectifiers and thyristors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346629
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of defect states induced by air plasma process in n/n+ epitaxial silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1520-1525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of radio frequency (rf) air plasma process-induced defect states in 50 Ω cm n/n+ epitaxial silicon are investigated by junction capacitance techniques. Capacitance-voltage measurements reveal the presence of a thin oxide layer of about 180 A(ring) on the 30-min plasma treated silicon sample. Deep level transient spectroscopy shows the existence of various defects in the sample. These consists of a dominant bulk electron trap labelled as E(0.46) at 0.46 eV below the conduction band, as well as continuously distributed interface states. The spectral dependence of the optical cross section for the defect levels were measured by deep level optical spectroscopy. A simple analysis indicates that a phonon mode ((h-dash-bar)ωp=28 meV) couples to the defect E(0.46). Its electron-phonon coupling strength is rather weak with a Franck–Condon shift of 0.04 eV. Defect E(0.46) anneals out at a fairly low temperature of about 120 °C. Etching off the oxide layer in a diluted HF solution was found to eliminate the E(0.46) defect level. This is tentatively explained as due to passivation of the defect E(0.46) by hydrogen from the HF solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346627
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  • 4
    Electronic Resource
    Electronic Resource
    A plasma etching-induced defect state in electron-irradiated n-type bulk section (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 897-899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect states induced by radio frequency air plasma etching process in n-type bulk silicon have been studied. Deep level transient spectroscopy shows that a deep center with a small electron capture cross section σtn =1.3×10−20 cm−3 and an energy level at 0.41 eV below the conduction band was induced by plasma treatment of previously electron-irradiated Si samples. The spectral dependence of optical cross sections for this defect level was measured by deep level optical spectroscopy, showing that the defect has a strong electron-phonon coupling with a Franck–Condon shift of about 0.4 eV, and that the defect core is repulsive for electrons. The defect anneals out above 400 K, and is also slightly unstable at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346755
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  • 5
    Electronic Resource
    Electronic Resource
    Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1380-1385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1489716
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructure of columnar crystallites in Ni80Fe20/Cu magnetic multilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2835-2839 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used electron microscopy to investigate the microstructure of Ni80Fe20/Cu magnetic multilayers which were synthesized by dc magnetron sputtering. Columnar structure was found in the specimen with and without giant magnetoresistance (GMR). All the columnar crystallites (CCs) originate from the Fe buffer layer on silicon wafer or glass substrate and penetrate though all the multilayers up to the surface of the film. The lateral size of the CCs ranges from 10 to 30 nm. Cross-sectional high-resolution electron microscopy study shows that the CCs are single-crystal-like with fcc structure resulting from the epitaxial growth of NiFe and Cu sublayers. Electron diffraction contrast imaging and electron energy filtered elemental mapping confirmed that multilayer nature is maintained throughout the entire NiFe/Cu film. Grain boundaries between CCs can be the most likely place where NiFe or Cu bridging will occur. Columnar structure was also found in a Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve film. The possible influence of the columnar crystalline structure on the GMR related problems is discussed. The microstructure results revealed in this article provide useful information for the GMR property investigation of NiFe/Cu based metallic multilayers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372265
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties and microstructure studies of Sm–Fe magnetic thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 328-334 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Binary SmxFe100−x(2〈x〈12) thin films were made by rf sputtering of the target onto preheated quartz glass substrates. Structural characterization, magnetic measurement, and microstructure observation were carried out by x-ray diffractometer, vibrating sample magnetometer, scanning electron microscope, and transmission electron microscope (TEM), respectively. Directly crystallized films were synthesized at substrate temperature higher than 400 °C and the main phase of the films is the ThMn12-type tetragonal phase with lattice parameters a=8.65 Å and c=4.78 Å. Films have the predominant [111] and [001] crystallographic texture when the substrate temperature is lower and higher than 600 °C, respectively. The perpendicular magnetization measured under the applied field of 22 kOe is about 30% higher than the saturation magnetization of bulk SmFe11Ti. Coercivities of about 4.0 kOe can be obtained in the substrate temperature range between 430 and 550 °C with grain size of 0.2–0.3 μm. Cross-sectional TEM microstructure observations show significant columnar structures in the films. The [001] texture formed in the films is also clearly reflected by the planar and cross-sectional TEM diffraction patterns. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364114
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  • 8
    Electronic Resource
    Electronic Resource
    Amorphous KNbO3 thin films with ferroelectriclike properties (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 164-166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous KNbO3 films are prepared by a low-cost sol–gel method. These films show a smooth surface morphology and have good waveguiding properties. Ferroelecticlike hysteresis loops are observed in these amorphous KNbO3 films with a remanant polarization of about 6μC/cm2. After corona poling, a stable effective second harmonic generation coefficient of 0.523 pm/V is achieved. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118347
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  • 9
    Electronic Resource
    Electronic Resource
    Auger electron spectroscopy of the hydrogen terminated chemical vapor deposited diamond surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2017-2019 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simultaneous study of Auger spectra and secondary electron emission from the chemical vapor deposited diamond films under extended electron beam exposure is presented. Up to a 1.2 eV increase in energy of the carbon Auger peak accompanied by the decrease of the total secondary electron yield has been found. Exposure to hydrogen has resulted in recovery of the both Auger peak position and secondary yield. First-principles electronic structure calculations have shown that the effect is due to a change in the surface upper-valence band local density of states of the diamond crystal which is dependent on the extent of hydrogen coverage of the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115623
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  • 10
    Electronic Resource
    Electronic Resource
    Enhancement of exciton binding energies in ZnO/ZnMgO multiquantum wells (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1993-1997 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of confinement on the exciton binding energies has been systematically investigated for two series of ZnO/ZnMgO multiquantum wells with various well widths and barrier heights. The exciton binding energies were extracted from the energy difference between the stimulated emission band induced by inelastic exciton–exciton scattering and the free exciton absorption band. The binding energies of excitons are found to be sensitively dependent on the well widths. The experimental results of the well width dependence of binding energies are in good agreement with Coli and Bajaj's theoretical calculations for these structures [G. Coli and K. K. Bajaj, Appl. Phys. Lett. 78, 2861 (2001)]. The remarkable reduction in coupling strength between excitons and longitudinal optical phonons is closely correlated with the enhancement of the exciton binding energy, indicating that the stability of excitons is greatly increased by the enhancement of exciton binding energy in quantum wells. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445280
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