ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Samples of HgBa2CuO4+δ (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (Ta), and O2 partial pressure (P0), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm O2 at 260 °C≤Ta≤400 °C, the obtained Tc is nearly the same (∼97 K). However, it decreases quickly with Ta(approximately-greater-than)300 °C in high vacuum (P0∼10−8 atm), and reaches zero at Ta=400 °C. On the other hand, Tc decreases with the decrease of Ta in high-pressure O2 (∼500 atm) and reaches ∼20 K at about 240 °C. In the entire annealing region, the oxygen surplus varies significantly from 0.03 to 0.4, and a wide range of Tc variation (0→97 K→20 K) was obtained with anion doping alone.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358052
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