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  • 1
    Electronic Resource
    Electronic Resource
    Plasma sputter multicusp negative/positive ion source with ECR discharge : Proceedings of fifth international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1223-1225 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A plasma sputter type of negative and positive ion source with electron cyclotron resonance (ECR) discharge has been developed at KEK. The ECR discharge was produced by a 2.45 GHz microwave source. In this ion source, negative heavy ions are produced at the surface of the metal which is placed in a Xe gas plasma confined in a cusp magnetic field. Positive ions are generated by ionizing of sputtered neutral atoms in the ECR discharge. The microwave is introduced into the source through a sputter target using a waveguide type of microwave transformer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145013
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of evaporated thin films of merocyanine dyes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 237-240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacuum evaporation of a merocyanine dye, 3-ethyl-5 [2-(3-ethyl-2-benzothiazolidene) ethyldene]-2-thioxo-4-thiazolidione, onto different substrates such as bare and surface-oxidized silicon wafers and a quartz glass substrate is done. There is a difference in color between a film deposited on the bare silicon substrate and one on either a quartz glass plate or a silicon wafer with a thick (96.5-nm) oxide layer. The dye film on quartz has an absorption maximum at 560 nm, whereas that on bare silicon has one at 582 nm. The bare crystalline silicon surface may give dye molecules more opportunity to aggregate than amorphous silicon dioxide or quartz surfaces. The dye molecules are preferentially oriented along the [100] direction of the substrate crystal, with the carbonyl group parallel to and the conjugated aromatic plane perpendicular to the substrate surface, although there is no detectable difference of orientation between the films deposited on these different substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345287
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of vacancy type defects in Ga-doped ZnSe using a monoenergetic positron beam (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1482-1484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied vacancy type defects in Ga-doped ZnSe films grown by molecular beam epitaxy using an energy-variable monoenergetic positron beam. We found that the concentration of negative charged vacancies, such as Zn vacancies, increases as the Ga atom concentration increases. This result indicates that the doping by Ga atoms induces the formation of Zn vacancies in a ZnSe film. We believe that these defects will cause the saturation of active carriers in n-type ZnSe films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105294
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication of an organic superlattice film by molecular beam deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2826-2830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A superlattice film of 5, 10, 15, 20 tetraphenylporphyrin (H2TPP; C44H30N4) and 5, 10, 15, 20 tetraphenylporphyrinato zinc (ZnTPP; C44H28N4Zn) was grown on a hydrogen terminated surface of Si (100) wafer which was kept at −25 °C. The organic molecular beam deposition technique was used for the fabrication under ultrahigh vacuum between 3×10−9 and 3×10−10 Torr. The small angle x-ray diffraction study has revealed that the period of the superlattice was 4.4 nm, which was also confirmed by the oscillation of the same period observed in a secondary ion mass spectrometry depth profile of Zn. The Fourier-transform infrared spectroscopy measurement indicated that the quasi-planar molecules of H2TPP and ZnTPP were inclined at an angle of 70° with respect to the substrate surface. The film surface was very flat and any roughness could not be detected by field emission secondary electron microscope observation. An atomic force microscope (AFM) therefore was used to investigate the surface. The root mean square roughness calculated from the AFM image was 0.37 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353059
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical conduction and electronic structures of novel tetrathionaphthalene derivatives (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1475-1478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conduction of pristine (undoped) and iodine doped vacuum deposited films of the novel donors, dibenzodithiotetra-thionaphthalene and dibenzodithiotetraselenonaphthalene were measured. The electronic structures of these donor compounds were examined experimentally by ultraviolet photoelectron spectroscopy and theoretically by semiempirical MO calculations and compared with the corresponding data of tetrathiotetracene.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347234
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  • 6
    Electronic Resource
    Electronic Resource
    Superleak-tight cold valve testable at room temperature (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 841-841 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In order to obtain a reliable cold valve (or low temperature valve) which can be tested at room temperature, several combinations of hard material for the valve stem tip and soft material for the valve seat were tested. The combination of Be-Cu and Ag gave satisfactory performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142046
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  • 7
    Electronic Resource
    Electronic Resource
    High-intensity plasma-sputter heavy negative-ion source (invited) : International conference on ion sources (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 372-377 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multicusp magnetic field plasma-surface ion source, normally used for H−ion-beam formation, has been modified for the generation of high-intensity, pulsed, heavy-negative-ion beams suitable for a variety of uses. A brief description of the source and basic pulsed-mode operational data (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure) are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples, along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low-discharge-power conditions suggest that sources of this type may alo be used to produce high-intensity (mA) dc beams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141298
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  • 8
    Electronic Resource
    Electronic Resource
    Cathodoluminescence and electroluminescence of undoped and boron-doped diamond formed by plasma chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 983-989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible luminescence between 2.0–3.5 eV of undoped and boron-doped diamond formed by plasma-assisted chemical vapor deposition has been investigated by cathodoluminescence. Electroluminescence from Schottky diode of boron-doped semiconducting diamond has been observed for the first time and found to be due to the same luminescent center as that of cathodoluminescence. In the particles or films where the content of nitrogen and boron was greatly reduced, the cathodoluminescence peaks occurred at 2.8–2.9 eV. The characteristics of these emission spectra are very similar to those obtained in type-IIa diamond where dislocations are luminescent. The doping of boron during the deposition form another luminescent center at 2.3–2.4 eV. From the monochromatic cathodoluminescence imaging, the luminescent regions differ in the two peaks. {100} sectors are much more luminescent than {111} sectors at the signal of 2.8 eV. This phenomenon has been discussed based on the difference in defect or impurity concentration of each sector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345708
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  • 9
    Electronic Resource
    Electronic Resource
    Refractive indices of ZnMgSSe alloys lattice matched to GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2082-2084 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have experimentally investigated refractive indices n of ZnxMg1−xSySe1−y, using the ellipsometry method and reflection-spectrum measurement. The samples are epitaxial films of undoped ZnxMg1−xSySe1−y grown by molecular beam epitaxy on semi-insulating GaAs substrates. The obtained dispersion relations of n in the transparent region are classified by the band-gap energy Eg. We have found that the refractive index n of ZnxMg1−xSySe1−y decreases as Eg increases. These results will be available for the design of blue laser diodes containing ZnMgSSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110599
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  • 10
    Electronic Resource
    Electronic Resource
    Isoelectronic oxygen in II-VI semiconductors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 91-93 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of isoelectronic oxygen in II-VI semiconductors were studied by photoluminescence measurements. It was found that oxygen in CdTe, CdS, and ZnS can act as an acceptor as well as in ZnSe, and that the acceptor levels of oxygen in CdTe, CdSe, and ZnS are shallower than those of typical acceptors such as Na. Charge transfer from the host lattice to the oxygen atom may play an important role in oxygen acting as an acceptor. Based on the charge-transfer model, it can be qualitatively interpreted that there are two roles of oxygen in II-VI compounds: acting as an acceptor or as a trap, and that they are classified by the ionicity of the compound. We also now understand better the chemical trend of the oxygen-acceptor levels becoming more shallow compared to the typical acceptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107385
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