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  • 1
    Digitale Medien
    Digitale Medien
    Determination of Calcium in Biological Material by Flame Photometry (1953)
    s.l. : American Chemical Society
    Analytical chemistry 25 (1953), S. 1642-1644 
    Details
    ISSN: 1520-6882
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ac60083a019
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  • 2
    Digitale Medien
    Digitale Medien
    Some Errors in Determination of Calcium in Aged Blood Serum Eliminated by Flame Photometry (1954)
    s.l. : American Chemical Society
    Analytical chemistry 26 (1954), S. 1967-1968 
    Details
    ISSN: 1520-6882
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ac60096a032
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  • 3
    Digitale Medien
    Digitale Medien
    Microdetermination of Phosphorus (1956)
    s.l. : American Chemical Society
    Analytical chemistry 28 (1956), S. 1756-1758 
    Details
    ISSN: 1520-6882
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ac60119a033
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  • 4
    Digitale Medien
    Digitale Medien
    The thermal dissociation of decaborane on Si(111)-(7×7) and doping effects in the near surface region (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3155-3160 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The thermal decomposition of decaborane (B10H14) and its doping effects on Si(111)-(7×7) has been investigated by surface spectroscopies. Upon adsorption between 100 and 300 K, molecular decaborane was identified on the surface by high-resolution electron-energy-loss spectroscopy (HREELS) by the absence of Si-H surface species production. The thermal decomposition of adsorbed decaborane molecules at higher temperatures involves a preferential removal of hydrogen from the weaker B—H—B linkage. H2 thermal desorption was observed to cover a wide temperature range between 300 and 900 K. Clean boron deposition on the surface was achieved at ∼900 K. Upon heating to ∼1275 K, extensive boron diffusion into bulk silicon produced a highly B-doped region below the surface (∼103 A(ring)) with a carrier hole concentration on the order of ∼1019 cm−3 depending upon the initial surface boron coverage and annealing conditions. The surface adopted a ((square root of)3×(square root of)3)R30° reconstruction with a nominal 1/3 ML boron occupying subsurface substitutional sites. Both the localized B-Si vibration and carrier surface plasmon excitation were observed by HREELS at 100 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351477
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  • 5
    Digitale Medien
    Digitale Medien
    "A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular-beam epitaxy'' (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2219-2223 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A transmission electron microscope study of the twin structure in thin GaAs films grown by molecular-beam epitaxy on (111)B GaAs reveals the twinned region to be composed of three distinct crystallites which are single- and double-twin variations of the bulk crystal. A three-dimensional structure of the twin region involving variants of these crystallites, as required by the threefold symmetry of the (111)B plane, is proposed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348699
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  • 6
    Digitale Medien
    Digitale Medien
    Carbon incorporation during growth of GaAs by TEGa-AsH3 base low-pressure metalorganic chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7851-7856 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heavily carbon-doped GaAs (1×1018∼1×1020 cm−3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (Tg) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at Tg=590 °C or less than 40 at Tg=630 °C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward 〈110(approximately-greater-than) misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3×1020 cm−3 at Tg=580 °C and V/III=10.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353935
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  • 7
    Digitale Medien
    Digitale Medien
    Silicon nitride thin film production on Si(111) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4927-4931 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The production of silicon nitride films by ammonia decomposition on Si(111)-(7×7) has been studied by high-resolution electron energy loss spectroscopy, Auger electron spectroscopy, and low-energy electron diffraction. Silicon nitride films of ≤1 monolayer thickness exhibit a characteristic four mode vibrational spectrum after annealing to 1200 K, while multilayer films produce three vibrational modes at 495, 720, and 1020 cm−1. Upon continued heating of the submonolayer and multilayer nitride films, identical vibrational spectra are obtained, suggesting that both layers form Si3N4. These results are in excellent agreement with the vibrational spectra reported in the literature for Si3N4 layers grown using N atoms on the heated Si(111)-(7×7) surface, signifying that identical nitride films can be grown using ammonia. Si3N4 films grown on Si(111) are able to chemisorb ammonia at 300 K, showing that coordinatively unsaturated silicon sites are probably present on the film surface. This is in agreement with other studies which indicate that the growth mechanism for these silicon nitride films involves silicon enrichment at the film/vacuum interface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353810
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  • 8
    Digitale Medien
    Digitale Medien
    Compressive and tensile strain effects on hole tunneling in an InGaAs/AlInAs asymmetrical coupled quantum well (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7294-7301 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hole tunneling dynamics are investigated in a strained asymmetrical coupled quantum well (ACQW). The tunneling probabilities between heavy-hole states are calculated at different internal strains on the basis of the time-dependent Schrödinger equation analysis with the Luttinger–Kohn and an additional strain Hamiltonians. In a certain range of strain, a higher oscillation frequency (but a smaller oscillation amplitude) of hole tunneling at resonance is obtained in a biaxial tensile strain ACQW at in-plane wave vector k(parallel)=0. The biaxial compressive strain is observed to lower the oscillation frequency. With a nonzero wave vector (k(parallel)≠0), the oscillation frequency is found to be dominated by mixing effects and less dependent on the internal strain. The oscillation frequency remains roughly constant; however, the biaxial compressive strain ACQWs would still have a larger oscillation amplitude than biaxial tensile strain ACQWs.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355333
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  • 9
    Digitale Medien
    Digitale Medien
    Inhibition of atomic hydrogen etching of Si(111) by boron doping (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2954-2957 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111)-((square root of)3×(square root of)3)-R30° surface was studied using temperature programmed desorption (TPD), high-resolution electron energy-loss spectroscopy (HREELS), and low-energy electron diffraction. In comparison to the Si(111)-(7×7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111)-(7×7) surface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349320
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  • 10
    Digitale Medien
    Digitale Medien
    Critical current and flux pinning near Tc of a YBa2Cu3O7 thin film (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2461-2463 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The voltage V versus current I of a high-quality YBa2Cu3O7−x thin film with zero-resistance temperature equal to 90.8 K was measured at temperatures near Tc (85, 87, and 90 K, respectively) under different magnetic fields (0–7 T). A significant result is that the critical-current density of the film reached 1.37×104 A/cm2 (zero field) even at 90 K, implying that strong pinning centers exist in our sample. However, a small applied magnetic field will diminish the critical-current densities remarkably. The pinning-force densities are found to follow Kramer's scaling law in both perpendicular and parallel directions of the magnetic fields to the c axis of the film. A possible influence of thermally activated flux creep on the pinning mechanism is confirmed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349400
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