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  • 1
    Digitale Medien
    Digitale Medien
    Electrochemical capacitance-voltage profiling of n-type ZnSe (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5311-5317 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this article we report the first detailed study of electrochemical capacitance-voltage profiling of ZnSe. An electrolyte consisting of 1 M sodium hydroxide and 1 M sodium sulphite has been developed that does not deposit selenium while etching the surface of n-type ZnSe during C-V profiling. The dissolution number of the electrolyte/ZnSe system is a function of the strength of electrolyte and the etching current and in order to obtain an accurate etching depth a constant etching current mode was used. A wide range of doping concentrations including both uniformly doped and staircase structures have been measured demonstrating that the electrochemical C-V profiler can now be a routine tool for assessing the growth parameters of ZnSe.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352016
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  • 2
    Digitale Medien
    Digitale Medien
    Measurement of deflection-mode damping in an accelerating structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6257-6260 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have directly measured the damping of wake-field deflection modes in a slow-wave accelerating structure consisting of a dielectric-lined waveguide with segmented conducting boundaries wrapped with rf absorbing material. Such damping of deflection modes is desired to prevent beam breakup instabilities. Attenuation e-folding times of 246 ps were recorded for deflection modes at the Advanced Accelerator Test Facility while the quality of the desired accelerating mode remained unaffected.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348823
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  • 3
    Digitale Medien
    Digitale Medien
    Photocapacitance and photoconductance of Bi-doped ZnO (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4011-4016 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The density of occupied interface states as a function of energy in nonohmic polycrystalline Bi-doped ZnO was obtained using photocapacitance measurements. Peaks in the interface states' densities were observed at depths of 2.46 and 2.79±0.08 eV from the bottom of the conduction band. The combination of these two states was found in photoconductance measurements on Bi-doped samples of ZnO and not found in undoped samples; thus, these states were assumed to be related to interface states that arise from doping with Bi.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.348435
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  • 4
    Digitale Medien
    Digitale Medien
    Laser ablation of ZnSe using pulsed 193-nm irradiation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2001-2008 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Plasma jets have been produced by the pulsed laser ablation of bulk ZnSe targets. Electrical measurements show that a sudden increase in ion yield occurs at a threshold pulse energy density of 210 mJ cm−2 pulse−1. The plasmas obtained do not exhibit overall electrical neutrality, but have a net positive charge, while the ZnSe target develops a corresponding negative charge. The initial ion translational kinetic energies are also found to be very low, 〈1 eV. These observations suggest that the ablation process is the result of a buildup of photogenerated holes at the semiconductor surface sufficient to result in disintegration of the lattice and rapid vaporization at low thermal energies.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349485
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  • 5
    Digitale Medien
    Digitale Medien
    Observation of multiple wavelength soliton collisions in optical systems with fiber amplifiers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1715-1717 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Solitons of different wavelengths are found to exhibit substantial spectral and temporal changes when collisions are centered in erbium-doped fiber amplifiers. By using two soliton pulse trains, with ∼70-ps-wide pulses, spectrally separated by 1.8 A(ring), and 106 km of non-dispersion-shifted fiber, we observe a spectral and temporal shift of as much as 0.35 A(ring) and 55 ps, respectively, for each soliton. Both soliton wavelengths shift the same amount, but in opposite directions and remain undisturbed in terms of shape and amplitude after the collision. This shift may impose limitations on multiple wavelength soliton based communication systems utilizing fiber amplifiers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104044
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  • 6
    Digitale Medien
    Digitale Medien
    Output saturation characteristics of erbium-doped fiber amplifiers pumped at 975 nm (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2607-2609 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the signal saturation behavior of an erbium-doped fiber amplifier pumped at 975 nm. We have characterized the output saturation powers as a function of fiber length and observed that the output saturation powers peak at an optimum length close to the optimum length for small signal gain. The output saturation power is found to be higher at a signal wavelength of 1.555 μm than at 1.532 μm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102852
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  • 7
    Digitale Medien
    Digitale Medien
    Optically detected magnetic resonance of deep centers in molecular beam epitaxy ZnSe:N (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2411-2413 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Optically detected magnetic resonance has been used to investigate the deep level recombination processes in p-type ZnSe grown by molecular beam epitaxy and doped with nitrogen. In addition to the well-known shallow donor resonance at g=1.11, an anisotropic deep donor resonance is observed with g=1.38 and a deep acceptor resonance is detected at g=2. These results are consistent with the pair recombination processes proposed by us previously where the compensating deep donor was assigned to the VSe-Zn-NSe complex.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110491
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  • 8
    Digitale Medien
    Digitale Medien
    ZnSe-ZnCdSe quantum confined Stark effect modulators (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1715-1717 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report room temperature operation of a II-VI p-i-n quantum confined Stark effect modulator using a ZnSe-Zn0.8Cd0.2Se multiple quantum well structure within a ZdSe p-n junction. A n-type ZnSe layer was used as a novel contact to the p-type ZnSe. Results are given for photovoltage spectroscopy, absorption, and differential absorption as a function of the applied electric field.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109583
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  • 9
    Digitale Medien
    Digitale Medien
    Compensation processes in nitrogen doped ZnSe (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2208-2210 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have examined the compensation processes in nitrogen doped ZnSe grown by molecular beam epitaxy. Two independent donor–acceptor pair emission processes have been observed in photoassisted grown layers and detailed temperature dependence measurements have allowed us to conclude that a deep compensation donor with a binding energy of 44 meV exists in more heavily doped material. We propose that the compensating donor is a complex involving a native defect such as the (VSe-Zn-NSe) single donor and this suggestion is supported by the observation of changes in the carrier concentration profile with time.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108296
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  • 10
    Digitale Medien
    Digitale Medien
    Electrochemical capacitance-voltage profiling of n-type molecular beam epitaxy ZnSe layers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 344-346 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report the use of electrochemical capacitance-voltage profiling of n-type ZnSe layers by the use of NaOH electrolyte. Samples with both uniform and staircase doping profiles have been measured with concentrations ranging over 1016–1019 cm−3. The profiling technique has revealed in some samples regions of lower carrier concentration at the surface and at the ZnSe/GaAs interface. Our results demonstrate that this powerful technique can now be used for assessing the growth parameters of wideband gap II-VI materials in the same way that is widely accepted for III-V semiconductors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.107463
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