Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 7600-7603
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Wet thermal oxidation of AlAsSb was investigated. The oxidation kinetics was studied as a function of temperature and oxidation duration. An expression to allow accurate determination of the oxide depth for any temperature and time was established. Secondary ion mass spectrometry profiles and x-ray diffraction were used to demonstrate that an interfacial layer, composed of pure Sb and As and textured on InP, is formed during the oxidation process. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.365335
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