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  • 1
    Digitale Medien
    Digitale Medien
    Magnetic properties of (Er,R)2Fe17Ny compounds (R=Y,Gd) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6238-6240 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural and magnetic properties of the interstitial (Er1−xRx)2Fe17Ny compounds with R=Y and Gd, x=0, 0.1, 0.25, 0.4, 0.5, 0.6, 0.75, and 1.0, 2〈y〈3, have been investigated. All the parent compounds crystallize in the Th2Ni17-type structure, except for Gd2Fe17 which crystallizes in the Th2Zn17-structure. All nitrides preserve the same structure as the parents. Introduction of nitrogen results in an increase in lattice constants a and c, and the expansion of unit-cell volume is about 6%. The Curie temperature was found to increase distinctly after nitrogenation. Nitrogen absorption leads to an increase in saturation magnetization, the values of the saturation magnetization increase monotonically with increasing Y or Gd concentration. Nitrogenation increases the uniaxial anisotropy of the Er sublattice, and causes a spin reorientation. The Y and Gd concentration dependencies of the spin reorientation temperature Tsr exhibit maxima. The tentative spin phase diagrams are presented.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355410
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  • 2
    Digitale Medien
    Digitale Medien
    Growth and ferroelectricity of epitaxial-like BaTiO3 films on single-crystal MgO, SrTiO3, and silicon substrates synthesized by pulsed laser deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6466-6471 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The epitaxial-like BaTiO3 (BTO) films with good ferroelectricity are obtained both on (001)SrTiO3 (STO) single crystal and on CeO2 buffered silicon substrate by pulsed laser deposition. The deposition parameters need to be stringently controlled in order to grow BTO films with good crystallinity. The BTO films grown on YBa2Cu3O7−x (YBCO)/CeO2/STO substrates are epitaxial, as confirmed by rocking curve, φ scan, and wide-angle x-ray-diffraction techniques. The alignment of a and b axes of BTO films on YBCO/CeO2/Si substrate is, however, not as perfect as BTO film on YBCO/STO substrate. The BTO/YBCO/CeO2/Si films are only (00l) textured. The ferroelectric property measurement, using the YBCO layer as the base electrode material, shows that the remanent polarization Pr and coercive field Ec of the BTO/YBCO/CeO2/Si films (Pr=3.6 μC/cm2, Ec=11.1 kV/cm) are, however, as good as those of the BTO/YBCO/STO films (Pr=4.0 μC/cm2, Ec=12.5 kV/cm). © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359121
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  • 3
    Digitale Medien
    Digitale Medien
    Magnetic properties of Er2Fe17−xAlxNy compounds : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6241-6243 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural and magnetic properties of the Er2Fe17−xAlxNy compounds (0≤x≤3) have been investigated. All nitrides and parent compounds crystallize in the Th2Ni17 structure. Al substituted for Fe leads to an increase in lattice constants a and c. Introduction of nitrogen results in a further increase of lattice constants, but the magnitude of this increase is smaller for increasing x. As Al content increases, the Curie temperature of the parent compound increases, whereas the Curie temperature of the nitride decreases. The substitution of Al for Fe results in a decrease of Fe moment in both nitrides and parent compounds. Introduction of nitrogen leads to an increase in the uniaxial anisotropy of the Er sublattice and a spin reorientation. A tentative spin phase diagram has been constructed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.355411
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  • 4
    Digitale Medien
    Digitale Medien
    Interfacial chemistry at metal/CdTe contacts as probed by differential scanning calorimetry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4145-4153 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: All four possible chemical reactivity patterns, namely, outdiffusion of Te (metal-Cd alloy formation), Cd outdiffusion (metal telluride compound formation), comparable chemical reactivity of the metal towards both Cd and Te (no Cd or Te outdiffusion), and chemical inertness of the metal towards CdTe, were differentiated via the differential scanning calorimetry (DSC) technique from a study of the interaction of nine different metals toward CdTe powder. The fusion signatures of free Cd or Te, exotherms due to compound or alloy formation, along with the thermal transitions of the metal telluride and/or the intermetallic were used for this purpose. These reactivity patterns are discussed within the framework of two different thermodynamic models. Both virgin and chemically etched CdTe surfaces were examined, and found to exhibit rather different reactivity trends towards the metal. The ramifications of these results in terms of the electronic properties of metal/CdTe contacts are discussed. Finally, DSC is shown to be useful for probing alterations in the CdTe surface chemistry as a result of the etch treatment.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357365
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  • 5
    Digitale Medien
    Digitale Medien
    Interdiffusion of multilayer ferroelectric thin films using YBa2Cu3O7−x as an intermediate layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7621-7626 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Interdiffusion between layers in multilayer ferroelectric thin films was studied from their elemental depth profiles using secondary ion mass spectrometry. Among the films deposited on YBa2Cu3O7−x/CeO2/Si substrates, the interdiffusion is most pronounced for [Sr0.5Ba0.5]Nb2O6 (SBN) films, less marked for Pb0.97La0.03(Zr1−xTix)0.9925O3 (PLZT, x=0.54 or 0.34) films, and is least significant for BaTiO3 films. Higher substrate temperature used for growing SBN films is believed to be the main cause of interdiffusion. The larger proportion of cationic vacancies existing in PLZT films is another possible source inducing interdiffusion. Using YBa2Cu3O7−x/SrTiO3 as substrates substantially reduces the interdiffusion between layers. This is ascribed to the better crystallinity of the YBa2Cu3O7−x layers deposited on SrTiO3 substrates. These results indicate that both the characteristics of ferroelectric films and the underlying YBa2Cu3O7−x layers substantially modify the interdiffusion behavior between the layers. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362340
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  • 6
    Digitale Medien
    Digitale Medien
    The magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7452-7455 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structures and magnetic properties of R2(Fe1−xSix)17 compounds (R=Dy, Y) were investigated by x-ray phase analysis and magnetic measurements. It is shown that Si substitution for Fe leads to a phase transition at x=0.2, and that the mean iron magnetic moment μFe of R2(Fe1−xSix)17 compounds (R=Dy, Y) decreases as Si concentration x increases; moreover, there is a maximum of dependence Tc(x) at about x=0.16. It is found that the exchange interaction constant AFeFe in R2(Fe1−xSix)17 compounds (R=Dy, Y) increases with x increasing by means of mean-molecular-field analysis of Tc. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357972
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  • 7
    Digitale Medien
    Digitale Medien
    Localized epitaxial growth of MoSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1518-1524 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial tetragonal and hexagonal MoSi2 (t-MoSi2 and h-MoSi2) were grown locally in (001), (111), and (011)Si. Five different epitaxial modes, referring to sets of definite orientation relationships between silicides and the substrate Si, were identified for t-MoSi2, whereas three distinct modes were found for h-MoSi2. Variants of epitaxy, required by the symmetry consideration, were also observed. It is conceived that ample thermal energy was supplied during high-temperature annealings to cause various modes of epitaxy which presumably correspond to low-energy states that occur. The reactive nature of the silicide formation is suggested to facilitate the growth of epitaxial silicides on silicon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336458
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  • 8
    Digitale Medien
    Digitale Medien
    Localized epitaxial growth of WSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3481-3488 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial growth of both tetragonal and hexagonal WSi2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi2/Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi2 and MoSi2, which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336818
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  • 9
    Digitale Medien
    Digitale Medien
    The roles of N and P type Si(100) substrates in the nucleation and growth of textured diamond films by hot filament chemical vapor deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3339-3344 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: P-Si(100) and n-Si(100) substrates had quite different responses to the same process parameters used in the modified four-step diamond growth method, i.e., pretreatment, heating, bias enhanced nucleation (BEN) and bias texture growth (BTG), which has been developed to grow textured diamond films by hot filament chemical vapor deposition. At the pretreatment step, a bright blue plasma discharge induced the formation of damaged voids randomly distributed on the surfaces of p-Si(100) and n-Si(100). The damaged voids on p-Si(100) are several microns in size and 3 μm in depth. In contrast, the size and depth of the damaged voids on n-Si(100) are in nanometer scale, approximately two orders of magnitude lower than those on p-Si(100). At the BEN step, carburization occurred along with the possibility of diamond nucleation. Unfacet nuclei of micron scale distributed around the edge of damaged voids all over the p-Si(100) substrate. In contrast, a great number of small nuclei of nanometer scale spread and covered all the damaged voids around the outer edge of the n-Si(100) substrate. The continuous textured diamond film grown on p-Si(100) had better diamond quality than that on n-Si(100) at the BTG step. The textured diamond film on p-Si(100) was flat, however, that on n-Si(100) was under stress in convex shape. Ion bombardment at the BTG step resulted in the enhancement of the growth of textured diamond and in the degradation of diamond quality through the formation of amorphous carbon. P-Si(100) is considered better than n-Si(100) to be the substrate for textured diamond deposition. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.369680
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  • 10
    Digitale Medien
    Digitale Medien
    Spin-reorientation transition in magnetic alloy films CoxNi1−x/Cu(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7139-7141 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: With better than 1% control of alloy composition, binary alloy films CoxNi1−x/Cu(100) with x≤10% were prepared for the study of the spin-reorientation transition at variations of composition, thickness, and temperature. Only the films with a Co concentration less than 10% reveal the spin-reorientation with the film thickness. The critical thickness for the spin-reorientation transition was shifted drastically from 7.5 to 17.5 monolayers for a Co concentration variation from 0% to 8%. These findings indicate a strong influence of the composition on the magnetoelastic anisotropy. A kind of temperature-driven spin-reorientation from in-plane to perpendicular with increasing temperature was also found. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1354586
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