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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis of nanosized silver particles in ion-exchanged glass by electron beam irradiation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1694-1696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ag particles of 4.2 nm mean diameter have been formed inside a glass matrix, doped with silver by ion exchange, by electron beam irradiation of the glass cut into thin slices by ultramicrotomy. By this treatment, a high concentration of particles which are homogeneously arranged throughout the glass and exhibit a narrow size distribution is achieved (volume fraction of particulate silver: 3.5×10−2). The interface stress reflecting the particle/matrix interaction is comparable to that of isolated Ag particles. This new route of synthesis will allow to generate materials with strong third order nonlinear susceptibility. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118672
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Silicon nanocrystallites in buried SiOx layers via direct wafer bonding (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 641-643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combination of SiO vapor-deposition and direct wafer bonding is used to produce buried layers of SiOx. By thermally induced decomposition, Si nanocrystals embedded in SiO2 are obtained. Decomposition of the silicon suboxide is observed by studying the Si-O-Si stretching vibration in the infrared range. This phase separation process is found to start already at 400 °C and to be mostly complete after 1 h at 800 °C. Annealing at 1000 °C yields well established Si nanocrystallites of considerable density with diameters about 4 nm buried in the interface layer between the bonded silicon wafers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124467
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  • 3
    Electronic Resource
    Electronic Resource
    Quantitative high resolution electron microscopy of III-V compounds: A fuzzy logic approach (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1763-1765 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the study of interdiffusion phenomena in layered structures of III-V compounds by high resolution electron microscopy, contrast features in the micrographs can be correlated with the variation of the chemical composition of the crystals. For quantitative interpretation of the micrographs a fuzzy logic approach is adapted to extract chemical information. The linguistic variable "similarity of images'' is derived from the standard deviation (SD) of their difference patterns, which proved to be an appropriate measure. The approach developed is used to analyze simulated contrast tableaus of GaAs/P (As/P variation) and experimental micrographs of Al/GaAs (Al/Ga variation). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114375
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    Paper (German National Licenses)
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