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  • 1
    Electronic Resource
    Electronic Resource
    SrBi4Ti4O15 thin films and their ferroelectric fatigue behaviors under varying switching pulse widths and frequencies (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3160-3164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline ferroelectric SrBi4Ti4O15 thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. Structures of the films were analyzed by x-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy. At an applied field of 275 kV/cm, the films showed good hysteresis loops with remnant polarization (Pr), saturated polarization (Ps) and coercive field (Ec) of 3.11 μC/cm2, 7.81 μC/cm2 and 68 kV/cm, respectively. At 120 kV/cm switching pulse field, fatigue tests were carried out systematically by varying the switching pulsewidth with a fixed duty cycle and with a fixed switching period, respectively. A gradual increase followed by an abrupt increase of the fatigue rate was observed with the increase of the switching pulsewidth. Field-induced defect diffusion was used to explain the results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435414
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  • 2
    Electronic Resource
    Electronic Resource
    Internal friction and Young's modulus of SrBi2Ta2O9 ceramics (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1453-1457 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal friction (IF) and the Young's modulus of SrBi2Ta2O9 (SBT) ceramics were measured by using the reed vibration method in the temperature range from 100 to 600 K with kilo-hertz frequencies. A high IF peak associated with a modulus defect appeared around 500 K, which was assumed to be due to the migration of oxygen vacancies with the activation energy U of about 0.95 eV. The mechanism of the IF peak was discussed in detail. At 570 K, an IF peak due to the viscous motion of domain walls near the Curie temperature was found. Below room temperature, a low IF peak with a modulus defect was found with peak temperature of 200–250 K, which varied for tens of degrees in different samples. This peak was due to the depinning process of 90° domain walls from oxygen vacancies. These results can be helpful in explaining the excellent fatigue resistance property of SBT thin films at room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372034
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of ion irradiation damage on properties of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1320-1323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion-irradiation on porous Si formation, microstructure, and optical properties. Porous Si was first self-implanted and then fabricated by anodization. With increasing implantation dose, the photoluminescence (PL) intensity decreased, and the PL spectra were also red shifted. Porous Si formed from crystal Si emitted light, while that from preamorphized Si did not. Porous Si luminescent patterns with a resolution of 2 μm features were formed by selective ion implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361028
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  • 4
    Electronic Resource
    Electronic Resource
    Raman spectroscopic studies of proton-exchanged LiNbO3 crystals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1953-1957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra of LiNbO3 crystals with different proton-exchange time were examined. E(TO) and A1(TO) modes appear in the A1- and E-symmetry spectra, respectively, and their intensities show a dependence on exchange time. We attribute these results to both the internal strains resulting from order-disorder distribution of protons in the sample and the enhanced photorefractive effect. In addition, in the E-symmetry spectra the softening of A1(TO) mode at 630 cm−1 was found about 4%. The phenomenon arises from the existence of ferroelectric and paraelectric phases in the protonated sample at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360166
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  • 5
    Electronic Resource
    Electronic Resource
    High-frequency resonance in acoustic superlattice of periodically poledLiTaO3 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 592-594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electric poling method has been used to prepare microstructured LiTaO3 crystals with periodically inverted-ferroelectric domains. By using these crystals as acoustic superlattices, both an "in-line" scheme and a "cross-field" scheme for acoustic excitation have been realized. The experimental results are in good agreement with the theoretical analysis. It is expected that these results may be applied to a bulk-acoustic device operating at a frequency high above 450 MHz. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118284
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  • 6
    Electronic Resource
    Electronic Resource
    Evidence of ferroelectricity weakening in the polycrystalline PbTiO3 thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3728-3730 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies on the polycrystalline PbTiO3 thin films deposited on (001) redoped n-Si substrates by metalorganic chemical vapor deposition (MOCVD) under reduced pressure indicated the evidence of ferroelectricity weakening [Appl. Phys. Lett. 65, 1906 (1994)] when the grain size of PbTiO3 was down to the scale of ∼1100 A(ring). X-ray diffraction patterns demonstrated that the perovskite unit cells have a contraction along the c-axis direction. All transverse optical phonon modes in the films were observed shift downward in the Raman spectrum measured at 300 K. And the spontaneous polarization of PbTiO3 is determined to be 52 μC/cm2 by using Si substrates as the bottom electrodes. The three related experimental observations are conjected to be attributable to the finite size effect and the surface conditions in the ferroelectric thin film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115987
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  • 7
    Electronic Resource
    Electronic Resource
    PbTiO3 thin films prepared by metalorganic chemical vapor deposition on LaAlO3 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 148-150 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality PbTiO3 thin films have been grown on LaAlO3 substrates by metalorganic chemical vapor deposition, using purified metalorganic precursors titanium-iso-propoxide and tetra-ethyl-lead. The results of the cross-section scanning electron microscopy and x-ray diffraction (XRD), including theta and phi scan, show that the films are epitaxy, and a domains and c domains may align alternately in the thin films. The experiments of high-temperature XRD reveal the nature of the phase transition of grown PbTiO3 thin films from tetragonal to cubic phase. The transition temperature is around 460 °C which is far lower than that of bulk PbTiO3 and the thin films deposited on fused quartz substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113545
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of C60 molecules embedded in porous Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3471-3473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) spectra of C60 molecules embedded in porous Si through both physical deposition and chemical coupling were measured. In addition to the PL peak of porous Si, a peak at 730 nm caused by perfect C60 molecules and other peaks at 620 and 630 nm caused by imperfect C60 molecules were observed. The peak at 620 nm measured in the sample with physically deposited C60 is induced by C60 adsorbed on the Si atoms of the pore wall, while the peak at 630 nm measured in the sample with chemically coupled C60 molecules is caused by the coupled C60 molecules. At room temperature, the PL intensity of C60 embedded in the porous Si is obviously enhanced, and the transfer of carriers from porous Si grains into adjacent C60 is considered to be responsible for the PL enhancement. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115250
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  • 9
    Electronic Resource
    Electronic Resource
    Single-crystalline, single-domain epitaxy of PbTiO3 thin films by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3503-3505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystalline and single-domain PbTiO3 films with thickness of 3000 A(ring) have been prepared by metalorganic chemical vapor deposition (MOCVD), using metalorganic precursors of tetra-ethyl-lead and iso-propoxide titanium. The nature of single-crystalline epitaxy and single domain of as-grown films was characterized by x-ray diffraction (XRD), synchrotron radiation (SR), and Rutherford backscattering (RBS). Using atomic force microscopy (AFM), the evidence of layer-by-layer growth was observed. The growth steps on the surface may be attributable to the formation of single-crystalline and single-domain PbTiO3 film with 3000-A(ring) thickness. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115261
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  • 10
    Electronic Resource
    Electronic Resource
    Visible electroluminescence from nanocrystallites of silicon films prepared by plasma enhanced chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 596-598 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed visible electroluminescence (EL) from silicon nanocrystallites which are embedded in a-Si:H films prepared in a plasma enhanced chemical vapor deposition system. The EL spectra are in the range of 500–850 nm with two peaks located at about 630–680 and 730 nm, respectively. We found that the intensity of EL peaks is related closely to the conductivity of the deposited films. The carrier conduction path is discussed in terms of the material structural characteristics, and a tentative explanation of the light emission mechanism is proposed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117918
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