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  • 1
    Digitale Medien
    Digitale Medien
    Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3754-3759 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have carried out extensive Raman scattering investigations of the damage caused by the dry etching in GaAs. The heavily doped n+-GaAs (2–3×1018 cm−3) allows the study of the coupled longitudinal optical (LO) phonon-plasmon mode as a probe to assess the dry etch-induced damage. Three etching techniques were used including conventional radio frequency (rf) reactive ion etching (RIE), ion beam etching (IBE), and electron cyclotron resonance radio frequency reactive ion etching (ECR-RIE). It is demonstrated that the etched damage is confined to a few tens of nanometers after 20 nm of material is etched away. ECR-RIE etching produces the smallest damage. It is found that in RIE etching, as etching proceeds, the depletion depth saturates while for purely physical etching (IBE) the depletion depth increases continuously, at least under the conditions used.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350885
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  • 2
    Digitale Medien
    Digitale Medien
    Pd/Ti bilayer contacts to heavily doped polycrystalline silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 311-312 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ohmic contact properties of Pd/Ti bilayer to heavily doped n+-polycrystalline silicon, prepared by electron beam evaporation, were studied by using both electrical measurements and Rutherford backscattering spectroscopy. The electrical behavior of the contacts at different sintering conditions is explained by the corresponding chemical composition changes at the metal/silicon interface during the sintering process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352140
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  • 3
    Digitale Medien
    Digitale Medien
    Study of C2F6 overetch induced damage and the effects of overetch on subsequent SiCl4 etch of GaAs/AlGaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4961-4966 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A quantum well intermixing probe system has been used to study the damage in GaAs/AlGaAs due to exposure to C2F6 plasmas as a function of rf power. At an etching power of ≤80 W, the photoluminescence energy shift after rapid thermal processing is rf power dependent. The etch rate selectivities between SiO2 and GaAs, and between GaAs and AlGaAs were found to increase with decreasing power, while the etching of AlGaAs was inhibited at an rf power of 10 W and below. In situ reflectometry measurements during subsequent SiCl4 etching suggest that fluorocarbon contaminants are deposited on the GaAs surface during the C2F6 etch, that these contaminants protect the surface from oxidation in the air, and therefore the GaAs induction time in SiCl4 is reduced. However, during a SiCl4 etch of a GaAs/AlGaAs layered structure, these contaminants are redeposited on the AlGaAs surface resulting in an increased AlGaAs induction time, a nonconstant etch rate and surface roughening. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359303
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  • 4
    Digitale Medien
    Digitale Medien
    Reactive ion etching of polycrystalline silicon using SiCl4 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2898-2900 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Reactive ion etching of polycrystalline silicon using SiCl4 was used to etch 70-nm-wide structures. The etching mechanism of the process was investigated by using emission spectroscopy. It was found that the principal etchant for polycrystalline silicon is Cl+2.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104715
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  • 5
    Digitale Medien
    Digitale Medien
    CH4/H2: A universal reactive ion etch for II-VI semiconductors? (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2531-2533 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A high resolution reactive ion etching process, capable of producing nanostructures less than 50 nm wide in a variety of II-VI semiconductors, is described. Using a mixture of methane and hydrogen, binary II-VI compound, e.g., ZnTe, ZnSe, CdTe, ZnS, CdS, and ternary compounds, e.g., CdMnTe and ZnSSe, have been etched. It would appear that the CH4/H2 gas mixture will play the same role for the II-VI semiconductors as it does for the III-Vs, that of seemingly ubiquitous etching system.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106929
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  • 6
    Digitale Medien
    Digitale Medien
    Edge effects in a gated submicron resonant tunneling diode (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2508-2510 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have investigated the current-voltage [I(V)] characteristics of a gated GaAs/(AlGa)As resonant tunneling diode. As the negative gate voltage is progressively increased I(V) becomes asymmetric. In particular the peak-to-valley ratio in forward bias is decreased from (approximately-equal-to)20 to (approximately-equal-to)1, but in reverse bias remains constant (approximately-equal-to)20. This arises from a lateral variation of the voltage drop across the emitter tunnel barrier, which in forward bias leads to a smearing of the resonance. We discuss the relationship between our experiment and the low peak-to-valley ratios of two-terminal submicron resonant tunneling diodes observed by other groups.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106949
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  • 7
    Digitale Medien
    Digitale Medien
    Effect of wire width variation on the conductance of a silicon quantum wire (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2530-2532 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effect of wire width variation on the conductance of a 1 μm×30 nm silicon quantum wire has been studied. Both resonant tunneling features and conductance fluctuations superimposed on the quantized steps have been observed and explained by the existence of a step-wise constriction in the wire due to the nonideality in the fabrication process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109286
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  • 8
    Digitale Medien
    Digitale Medien
    Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 497-499 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low-energy broadband emission at around 0.8 eV and other features normally observable in photoluminescence measurements, fabrication process induced strain relaxation and enhanced electron-hole droplets emission together with a new feature at 1.131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109984
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  • 9
    Digitale Medien
    Digitale Medien
    Fabrication of NiFe thin film elements by dry etching using CH4/H2/O2 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3194-3196 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A mixture of methane, hydrogen, and oxygen has been used to etch thin films of NiFe. The variation of etch rate with concentration of methane and oxygen has been investigated. By using a SrF2 mask, patterned by liftoff, small micrometer-sized elements have been fabricated. It is demonstrated that the use of CH4/H2/O2 as an etchant yields elements possessing similar micromagnetic properties to those produced by conventional liftoff. The process has also been successfully employed to etch other important magnetic thin films. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115160
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  • 10
    Digitale Medien
    Digitale Medien
    New chemistry for selective reactive ion etching of InGaAs and InP over InAlAs in SiCl4/SiF4/HBr plasmas (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2660-2662 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A selective reactive ion etching process which etches InP and InGaAs, but not InAlAs, using a mixture of SiCl4/SiF4/HBr gases has been developed. Optical emission spectroscopy shows that the dominant emitting species in the plasma are HBr+, Br, and Br2, with a weaker emission from SiBr and SiHBr. We believe that the bromosilanes or chlorosilanes of the form (SiHxBry,SiHxCly) are responsible for the etching of these In-containing compounds by the formation of indium bromosilanes and indium chlorosilanes. Using a flow rate ratio of SiCl4/HBr of 7/15 sccm, a pressure of 100 mTorr and with dc bias of 80 V, an etch rate of InGaAs and InAlAs as high as 100 nm/min at room temperature was achieved with good surface morphology. The addition of SiF4 suppresses the etching of InAlAs and the selectivity obtained can be changed by varying the proportion of SiF4. At a flow rate ratio (SiCl4:SiF4:HBr) of 5/6/20 sccm, dc bias of ≤70 V and a pressure of 150 mTorr, the selectivity obtained is extraordinarily high ((approximately-greater-than)600:1) for this material system. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114328
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