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1

Digitale Medien

Line-broadening analysis of synchrotron x-ray diffraction data (1987)

Huang, T. C. ; Hart, M. ; Parrish, W. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 61 (1987), S. 2813-2816

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The advantages of using monochromatic and parallel synchrotron x rays for the microstructure analysis of polycrystalline materials have been studied. Analysis of line broadening from Pd powers showed encouraging results. Warren–Averbach analysis [J. Appl. Phys. 21, 595 (1950)] with respect to the three major crystal axes [111], [100], and [110] was done using 1-A(ring) x rays. Crystallite sizes and microstrains relative to the [111] direction were obtained using three different reflection pairs (111)-(222), (111)-(333), and (111)-(444). The fixed symmetrical instrument profile shape has major advantages in the correction of instrumental broadening and the determination of a low level (10−4 range) of stacking-fault probabilities.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.337872

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2

Digitale Medien

Magnetic and structural properties of high rate dual ion-beam sputtered NiFe films (invited) (1987)

Lo, Jerry ; Hwang, C. ; Huang, T. C. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 61 (1987), S. 3520-3525

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: NiFe films in the thickness range of 300 A(ring) to 8 μm with excellent magnetic properties and thickness uniformity have been prepared using a newly developed high rate (up to 1000 A(ring)/min) dual ion beam sputtering system. Deposition conditions such as the ion assist voltage, the target orientation and the partial pressure of nitrogen have been optimized to reduce coercivity Hc and stress as well as to improve film adhesion and film thermal stability. The annealing effects on Hc, the anisotropy field Hk, as well as the resistivity of the NiFe films were studied. X-ray diffraction and transmission electron microscopy techniques were used to characterize the microstructures of the films and were correlated with their magnetic properties. These ion-beam sputtered NiFe films have excellent magnetic, electrical, mechanical, and microstructural properties to make them suitable for thin-film head applications.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.338713

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3

Digitale Medien

Sputtered silicon as a new etching mask for GaAs devices (1986)

Wu, X. S. ; Omura, E. ; Huang, T. C. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 1218-1220

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The use of a sputtered silicon film as a new type of etching mask is reported for the first time. Its desirable properties arise because of similar material characteristics (thermal expansion coefficient, crystal structure, smaller misfit factors) and different etching behavior as compared to gallium arsenide. These properties are studied and utilized in the fabrication of GaAs/GaAlAs double heterostructure (DH) ridge waveguide devices.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.337370

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4

Digitale Medien

Surface-oxidation-induced phase separation in FeMn thin films (1988)

Lefakis, H. ; Huang, T. C. ; Alexopoulos, P.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 5667-5669

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Films of Fe50Mn50, 700 A(ring) thick, were deposited on glass substrates by diode rf sputtering. Auger electron spectroscopy, and x-ray fluorescence analysis verified the film composition and x-ray diffraction determined the crystalline phase to be α-Mn(Fe), a complex bcc-like structure and a considerable deviation from that dictated by the equilibrium binary phase diagram. The films were annealed for 1 h at 260 °C and 10−7, 10−5, and 10−2 Torr. Auger depth profile analysis showed that (a) while no further oxidation (than that induced by ambient exposure) occurred during annealing at the lowest pressure, severe film oxidation took place at the highest pressure and (b) preferential surface oxidation of Mn resulted in a layered structure consisting of a surface Mn- and oxygen-rich layer followed by a region (deeper into the film) depleted in Mn and Fe enriched. The crystalline phases present were determined by x-ray diffraction analysis to be MnO (fcc) and α-Fe(Mn) (bcc). Magnetic measurements of the oxidized films revealed that they displayed in-plane isotropic ferromagnetic properties, with 4πMs∼15–18 kG for the most extensively oxidized films.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.342268

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5

Digitale Medien

X-ray structures and magnetic properties of sputtered osmium-doped iron oxide thin films (1986)

Lim, G. S. ; Huang, T. C. ; Bullock, D. C. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 3543-3548

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: X-ray structures and magnetic properties of sputtered osmium-doped iron oxide thin films prepared under various deposition conditions have been analyzed by x-ray diffraction and vibrating sample magnetometer techniques. Results show that the crystalline phase, macrostain, and grain size play important roles in the coercivity Hc, saturation magnetization 4πMs, and squareness S* of the films. Ferrimagnetic γ-Fe2O3 and/or α-Fe of 400-A(ring) grain size or less were mainly responsible for the good coercivities and magnetizations of the films, i.e., Hc=700–1000 Oe and 4πMs=4000–6000 G. A film which contained appreciable antiferromagnetic α-Fe2O3 phase had much lower Hc(=130 Oe) and 4πMs(=1000 G). Correlation between macrostrain εn, and S* has been observed where the film with large compressive strains had low S*=0.69, and those with little or zero εn gave good squareness S*=0.79–0.81.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.336775

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6

Digitale Medien

Characterization of geometric effects for the guide/antiguide intensity modulator (1992)

Huang, T. C. ; Chung, Y. ; Dagli, N. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 4455-4457

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The characteristics of geometric dimensions, such as the modulation length L, the central guide width W, and the gap G between the central guide and antiguide regions for the performance of the guide/antiguide intensity modulator have been examined. Both theoretical predictions and experimental measurements are reported here.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.352186

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7

Digitale Medien

120-K Tl-based high-Tc superconducting thin films on LaAlO3 substrates (1991)

Lee, W. Y. ; Vazquez, J. ; Huang, T. C. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 3952-3954

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The preparation and properties of 120-K Tl-based high-temperature superconducting thin films on LaAlO3 substrates are reported. These films are obtained by post-annealing 2Tl: 2Ca: 2Ba: 3Cu: 10O precursor films at (approximately-equal-to)890 °C in a sealed quartz tube filled with (approximately-equal-to) 1-atm O2. Results of ac susceptibility measurements show a sharp drop in the real part of the susceptibility (χ') and a sharp maximum peak in the imaginary part of the susceptibility (χ‘) at a temperature close to the observed zero resistance Tc of (approximately-equal-to) 120 K. The broadening of the transition width in χ' and the decrease in the temperature where χ‘ maximum appears are found to occur at a slower rate with increasing ac field for these films than for the films deposited on Y-ZrO2 and MgO and having a similar zero resistance Tc. This weaker field dependence of χ' and χ‘ is shown to lead to a higher critical current density for the films deposited on LaAlO3 substrates. The higher critical current density is attributed to a stronger coupling between the grains arising from the absence of the formation of well-defined grain boundaries during film growth.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.349208

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8

Digitale Medien

THE MOVING-BOUNDARY METHOD FOR DETERMINING TRANSFERENCE NUMBERS. VI. FURTHER DEVELOPMENTS IN EXPERIMENTAL TECHNIQUE (1927)

MacInnes, D. A. ; Cowperthwaite, Irving A. ; Huang, T. C.

s.l. : American Chemical Society

Journal of the American Chemical Society 49 (1927), S. 1710-1717

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ISSN: 1520-5126

Quelle: ACS Legacy Archives

Thema: Chemie und Pharmazie

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1021/ja01406a010

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9

Digitale Medien

High-contrast, large optical bandwidth field-induced guide/antiguide modulator (1991)

Huang, T. C. ; Chung, Y. ; Dagli, N. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 58 (1991), S. 2211-2213

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report an electric field induced-guide/antiguide optical intensity modulator which has a very wide optical bandwidth from 1 to 1.55 μm (ON/OFF ratio (approximately-greater-than) 13 dB from 1 to 1.55 μm for both TE and TM modes), which is the largest ever reported before for an intensity modulator. A TE mode ON/OFF ratio larger than 21 dB at 1.15 μm, and a propagation loss ∼1 dB at 1.3 μm has been measured. The electro-optic effects, along with carrier effects have been exploited to increase the refractive index under the guide and adjacent antiguide electrodes by applying reverse biases to them.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.104929

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10

Digitale Medien

Characterization of FeMn(N)/FeMn/Permalloy exchange coupled structures (1988)

Howard, J. K. ; Huang, T. C.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 6118-6120

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: X-ray diffraction was used to investigate the effect of nitrogen additions on the crystal structure and preferred orientation of FeMn films reactively sputtered in an Ar-N2 ambient. The fcc γ-FeMn phase was stabilized over a range of nitrogen pressures. The fcc FeMn(N) film was then used as a nucleation substrate for the deposition of an FeMn/Permalloy exchange coupled structure. A maximum exchange bias of 60–70 Oe was obtained when the FeMn(N) film was lattice matched to the γ-FeMn structure (a0=3.63 A(ring)).

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.342111

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