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  • 1
    Electronic Resource
    Electronic Resource
    013 
A New Method of Closing the Sternum with Absorbable Suture and Absorbable Fixed Pins (2004)
    Oxford, UK; Malden, USA : Blackwell Science Inc
    Wound repair and regeneration 12 (2004), S. 0 
    Details
    ISSN: 1524-475X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Aim: In case of using metal wire in closing after the median sternotomy, several disadvantages have been reported, including long lasting subject's sense of incongruity, risks of tear of the wire and cutting to be made by the wire, tenderness and becoming an abstacle for the use of CT or MRI. In our facilities, in order to solve these problems, absorbable suture and absorbable rib fixing pins have been used in closing the sternum. Methods: Objects of the median sternotomy we’ve had since October, 2001, are six cases. The suture used was 6 PDS codes of 1 mm in diameter and it went through the sternum and ligated it. Three absorbable pins of poly-L-lactide were used. Results: A progress observation period after the operation is from one month to fourteen months.The prognosis have been good and complications not recognized. Conclusions: The way of closing the sternum with absorbing suture and absorbing rib fixing pins will make it possible to solve problems incurred from the metal wire suturing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1067-1927.2004.abstractad.x
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  • 2
    Electronic Resource
    Electronic Resource
    Intersubband transitions in GaAs-AlxGa1−xAs modulation-doped superlattices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1741-1743 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated infrared absorptions between electron subbands in GaAs-AlxGa1−xAs modulation-doped superlattices with constant layer thicknesses (70 A(ring) for the GaAs layer and 180 A(ring) for the AlxGa1−xAs layer) and a wide Al concentration range from 0.3 to 0.7. Sharp resonance absorptions from the ground state to the first excited state were detected in all samples. The transition energy increases from 130 to 170 meV as the Al concentration increases. From the observed transition energies (subband spacing) we estimate that the conduction-band discontinuity is around 63% of the difference between the direct band-gap energy of GaAs and that of AlxGa1−xAs in the Al concentration range used here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98509
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  • 3
    Electronic Resource
    Electronic Resource
    Second-harmonic generation of a new chalcone-type crystal (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 221-223 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of chalcone crystal was prepared. Anisotropic indices with wavelength dispersion were measured by the Brewster angle method. The two largest second-harmonic generation (SHG) tensor components were determined by the wedge method and compared with d11 of 2-methyl-4-nitroaniline. Calculated collinear and noncollinear phase-matched SHG patterns reasonably fit the observed photographs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103744
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray diffraction analysis of buffer layer effects on lattice distortions of strained layer superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1124-1127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of In0.2Al0.8As buffer layers on the lattice distortions of the strained layer superlattices (In0.2Al0.8As)100 A(ring) (GaAs)100 A(ring) (30 periods) have been investigated by x-ray diffraction. We have found that for the buffer layer thickness hbuff≥5000 A(ring), the In0.2Al0.8As layers of both buffer layers and superlattices are in a strain-free state, while GaAs layers of superlattices show large tetragonal lattice distortions. This fact implies that for hbuff≥5000 A(ring), buffer layers dominate the strain fields of superlattices, i.e., buffer layers play the role of an "effective substrate.'' Lattice distortions in buffer layers and superlattices against buffer layer thickness are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339831
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  • 5
    Electronic Resource
    Electronic Resource
    Finite-size effects on Raman scattering from GaAs-AlAs superlattices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3289-3292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated finite-size (total number of periods) effects on Raman scattering by longitudinal acoustic (LA) and longitudinal optic (LO) phonon modes in GaAs-AlAs superlattices. Every superlattice has the same period (10-monolayer GaAs and 10-monolayer AlAs), while the total number of periods ranges from 3 to 100 periods. Even in the superlattice with three periods, folded LA phonon modes are induced by the superlattice period. Raman linewidths of folded LA phonon modes increase as the total number of periods decreases. The Raman linewidth broadening becomes remarkable below 20 periods. The dependence of linewidth broadening on the total number of periods results from the relaxation of the Raman selection rule for phonon wave vectors induced by the finiteness of superlattices. On the other hand, for LO phonon modes the finite size does not affect Raman line shapes; this originates in the confinement of LO phonon modes in individual layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337720
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  • 6
    Electronic Resource
    Electronic Resource
    Growth and characterization of InAs/In1−xAlxAs strained-layer superlattices on GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2057-2061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs/In1−xAlxAs strained-layer superlattices (SLSs) have been grown by molecular-beam epitaxy on highly mismatched (001) GaAs substrates. High-quality strained thin films were obtained by growing AlSb and In1−yAlyAs buffer layers between substrates and SLSs. X-ray diffraction analysis and photoluminescence (PL) measurements were used to evaluate the internal strain and strain-induced effects on band structures of SLSs. Comparison between observed and calculated results of x-ray analysis shows that free-standing (unsupported) SLSs are grown on a GaAs substrate. The emission peak energies in PL measurements are interpreted by taking into account the internal strain of individual layers in SLSs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339549
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  • 7
    Electronic Resource
    Electronic Resource
    Raman study of GaAs-InxAl1−x As strained-layer superlattices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4342-4345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to study the lattice-mismatch strains in GaAs-InxAl1−xAs strained-layer superlattices grown by molecular beam epitaxy with the layer thicknesses of 10–200 A(ring) and In content x of 0.11, 0.20, and 0.35. The strain-induced shifts of the longitudinal optic phonon modes indicate that the GaAs and InxAl1−xAs layers have the tensile and compressive strains, respectively, along the interfaces. The strain calculated from the observed frequency shift agrees with the lattice-mismatch strain given by the elastic theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335522
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence study of InxAl1−xAs-GaAs strained-layer superlattices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 588-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the strain-induced effects of the InxAl1−xAs-GaAs strained-layer superlattices grown by molecular beam epitaxy. The evaluation of the effects of biaxial strain in the planes perpendicular to the [001] superlattice direction was made by conventional photoluminescence measurements. The observed optical transition energies were evaluated by a Kronig-Penny model involving strain-induced band structure. Comparison between the observed transition energies and the calculated energies suggests that the optical transition of strained-layer superlattices is explained by the band-gap shift and the valence-band splitting, which are induced by the biaxial strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336617
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  • 9
    Electronic Resource
    Electronic Resource
    Tea catechins decrease micellar solubility and intestinal absorption of cholesterol in rats
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 1127 (1992), S. 141-146 
    Details
    ISSN: 0005-2760
    Keywords: (Rat) ; Bile salt micelle ; Cholesterol absorption ; Tea catechin ; Thoracic duct lymph ; Triacylglycerol absorption
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0005-2760(92)90269-2
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  • 10
    Electronic Resource
    Electronic Resource
    Protein kinase C in the regenerating rat liver
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 151 (1988), S. 1144-1149 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0006-291X(88)80485-6
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