ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Photoluminescence from epitaxial ZnO thin films deposited on R-plane sapphire substrates by RFmagnetron sputtering was investigated. The intensity of the near band emission (NBE) of the ZnOthin film on R-plane sapphire was stronger than that of the film formed on C-plane sapphire at a lowtemperature. Some experimental results suggest that NBE depends on the polarization of theexcitation light, which are considered to be related to the ZnO crystal orientation on the sapphiresubstrate
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.388.19.pdf
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