ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

SiGe-on-insulator substrate using SiGe alloy grown Si(001) (1999)

Ishikawa, Yukari ; Shibata, N.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 983-985

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Low-energy oxygen ion (25 keV O+) implantation was performed on a pseudomorphic Si1−xGex/Si(001) of uniform composition in an attempt to create a SiGe-on-insulator (SiGe-OI) substrate using the separation-by-implanted-oxygen technique. Choosing a small Ge composition (〈0.3) was found to be essential to achieving a SiGe-OI geometry of structural integrity. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.124574

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit