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  • 1
    Electronic Resource
    Electronic Resource
    GaAlAs gain-guided semiconductor lasers with a curved facet (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1667-1669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAlAs gain-guided semiconductor lasers having a curved facet are fabricated by employing reactive ion beam etching. The use of the curved facet permits stabilization of transverse mode in the direction parallel to the junction plane, reduction of astigmatism, and multilongitudinal mode oscillation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98537
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  • 2
    Electronic Resource
    Electronic Resource
    High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2471-2473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-sustained pulsating optical power and kink level in AlGaAs semiconductor lasers are remarkably improved by introducing a multiquantum well (MQW) structure in the active layer. Stable fundamental transverse mode operation at output power up to 50 mW and self-sustained pulsation at output power up to 40 mW are obtained simultaneously for MQW lasers with antireflective and high-reflective coatings on the facets. Low-noise characteristics (relative intensity noise of less than 10−13 Hz−1 under 3–4% optical feedback) are obtained in the output power range from 7 to 17 mW in MQW lasers with high-reflective coating on the rear facet. These results suggest that low-noise high-power characteristics can be achieved in self-sustained pulsating lasers with a MQW active layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100216
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  • 3
    Electronic Resource
    Electronic Resource
    Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1391-1393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers fabricated using a thin GaAs layer as an etch stop are reproducibly realized. The ridge stripe structure is fabricated utilizing the large difference in etching rates between GaAs/AlGaAs and AlGaInP layers. As a result, the thickness control of the cladding layer adjacent to light absorbing layers is significantly improved. Results show that the GaAs layer is effective as an etch-stop layer even if the thickness is only 1–2 nm. The total internal loss of the lasers is estimated to be about 20 cm−1 and loss due to the insertion of the GaAs layer is almost negligible. A threshold current of about 50 mA and a stable fundamental transverse mode up to an output power of about 10 mW is attained at room temperature under cw operation. Similar results were obtained when an AlGaAs layer was used instead of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100676
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature nitridation of fluorinated silicon dioxide films in ammonia gas (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 981-983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique of growing nitrided oxide at low temperatures has been developed. Fluorine-enhanced thermal oxidation of silicon in O2+NF3 at temperatures below 800 °C and subsequent annealing of the fluorinated oxide in pure ammonia gas at the same temperature result in the formation of nitrided oxide. The dielectric breakdown strength of the fluorinated oxide is improved by the nitridation. Also, the nitrided oxide acts as a protective layer against alkaline ion contamination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98783
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  • 5
    Electronic Resource
    Electronic Resource
    High-energy conversion efficiency amorphous silicon solar cells by photochemical vapor deposition (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3664-3666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon solar cells were fabricated by photochemical vapor deposition. A three-separate-chamber system was newly developed to reduce the contamination of the dopant elements as well as oxygen or water originated by the loading and unloading procedure. Wide optical band-gap hydrogenated amorphous silicon carbide was prepared using acetylene (C2H2) for the p layer. The deposition conditions for each layer were optimized and the highest-energy conversion efficiency of 9.64% was obtained. This high conversion efficiency was mainly attributed to the large short-circuit current which indicated that the quality of the i layer is reasonably good.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335724
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  • 6
    Electronic Resource
    Electronic Resource
    Radiative leakage of space-charge waves by a modulated thin-sheet electron beam propagating parallel to a reflection grating (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3543-3549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-dimensional radiation by a modulated thin-sheet electron beam, which propagates parallel to a reflection grating composed of a slightly corrugated conducting surface, is investigated. The radiation can be interpreted as a radiative leakage of space-charge waves supported by the electron beam, when the effect of radiated fields back on the motion of electrons is taken into account. A self-consistent analysis of the leaky space-charge waves is presented using a perturbation approach based on the multiple-space scales. The coupled-wave equations governing the radiative leakage of space-charge waves are systematically derived. The analytical expressions for physical quantities characterizing the radiation are obtained in closed form. Numerical results of the leakage coefficient, the phase change due to the leakage, and the radiation efficiency are given for both of the fast and slow space-charge waves.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339278
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  • 7
    Electronic Resource
    Electronic Resource
    Phase transition in ionic gels induced by copper complexation (1985)
    s.l. : American Chemical Society
    Macromolecules 18 (1985), S. 83-85 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00143a013
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  • 8
    Electronic Resource
    Electronic Resource
    Didymium-Fe-B sintered permanent magnets (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4146-4148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Present works describe the developments the low cost R-Fe-B sintered permanent magnets. Three different didymiums are chosen for the low cost mixtures of rare-earth elements. The studied alloy compositions are Fe-(32.5–34.5)wt. %R-(1–1.6)wt. %B, where R elements are didymium (Nd-10wt. %Pr), 5Ce-didymium (Nd-15%Pr-5%Ce), and 40 Ce-didymium (Nd-10%Pr-40%Ce). The specimens were prepared by the conventional powder metallurgical techniques. The best magnetic properties obtained in this studies are Br=13.2 kG, iHc=10.2 kOe, and (BH)max=40 MGOe with the Fe-33.5% (5Ce-didymium)-1%B alloy. Temperature dependence of iHc of this alloy is almost comparable to that of the Nd-Fe-B alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334647
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  • 9
    Electronic Resource
    Electronic Resource
    The effect of titanium on microstructure and magnetic properties of Fe-Cr-Co hard magnetic materials (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4167-4169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-Cr-Co ductile alloys produce magnetic properties comparable to those of Alnico permanent magnets family, up to (BH)max=91.2 kJ/m3(11.4 MGOe). It is technologically known that the addition of Ti to the Fe-Cr-Co alloys extends the α-phase region of system and improves the magnetic properties. The purpose of this work is to study the effect of Ti on microstructures and magnetic properties of Fe-Cr-Co alloys. The microstructures of Fe-25 wt.% Cr-12 wt.% Co alloys with or without Ti melted in air or in vacuum, were studied by optical microscopy, electron probe microanalysis (EPMA), and transmission electron microscopy (TEM). The alloys without Ti exhibit the precipitates of Cr23C6 carbide and Cr2N nitride a along the grain boundary or inside grain. These carbides and nitrides form the Cr-depleted zone around them. However, the addition of Ti suppressed the formation of Cr-depleted zone, in forming the Ti(C,N), and the magnetic properties are improved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334652
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature dependence of the effective permeability of the resin-molded Sendust alloys (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4252-4254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effective permeability ( μeff) of the ring Sendust alloys (Fe-9–10 wt. % Si-5–7 wt. %Al), molded with Epoxy resin, was measured in the temperature range of −10 to 70 °C. The μeff of the alloys in molded condition measured at 20 °C is smaller than that in unmolded condition. The high values of the μeff at 20 °C of the molded alloys were obtained from the alloys in which magnetostriction constants (λs) were close to zero. The temperature dependencies of the μeff for the studied alloys in the unmolded condition are very similar, but after molding they are classified into four variations depending on the value of λs. When the alloys have large positive or negative values of λs, the μeff increases or decreases monotonically with increasing temperatures, but for the alloy with λs (approximately-equal-to)0, the μeff temperature dependence is complex. These behaviors of the μeff with temperature are interpreted on the basis of the induced stress, initiating from the differences in thermal expansion between alloys and Epoxy resin. The μeff of the molded alloys was mainly dominated by the induced uniaxial magnetic anisotropy (Ku) by the tangential and axial compressive stresses in the molded ring alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335475
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